VSO05553 Search Results

VSO05553 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BAR80 Abstract: VSO05553 Contextual Info: BAR80 Silicon RF Switching Diode 3 Design for use in shunt configuration 4 High shunt signal isolation Low shunt insertion loss 2 1 VSO05553 Type Marking BAR80 AAs Pin Configuration 1=C 2=A 3=C Package 4=A MW-4 Maximum Ratings Parameter Symbol Diode reverse voltage	Original	BAR80 VSO05553 Aug-17-2001 100MHz EHD07010 EHD07009 BAR80 VSO05553	PDF
VSO05553 Abstract: marking BAr Contextual Info: BAR 81 Silicon RF Switching Diodes 3 • Design for use in shunt configuration 4 • High shunt signal isolation • Low shunt insertion loss 2 1 VSO05553 Type Marking BAR 81 BBs Pin Configuration 1=C 2=A 3=C Package 4=A MW-4 Maximum Ratings Parameter Symbol	Original	VSO05553 Oct-05-1999 VSO05553 marking BAr	PDF
VSO05553 Contextual Info: BAR 80 Silicon RF Switching Diode 3 • Design for use in shunt configuration 4 • High shunt signal isolation • Low shunt insertion loss 2 1 VSO05553 Type Marking BAR 80 AAs Pin Configuration 1=C 2=A 3=C Package 4=A MW-4 Maximum Ratings Parameter Symbol	Original	VSO05553 Oct-05-1999 100MHz EHD07010 EHD07009 VSO05553	PDF
marking BBs Abstract: BAR81 VSO05553 Contextual Info: BAR81 Silicon RF Switching Diodes 3 Design for use in shunt configuration 4 High shunt signal isolation Low shunt insertion loss 2 1 VSO05553 Type Marking BAR81 BBs Pin Configuration 1=C 2=A 3=C Package 4=A MW-4 Maximum Ratings Parameter Symbol Diode reverse voltage	Original	BAR81 VSO05553 Aug-21-2001 marking BBs BAR81 VSO05553	PDF