VS SEMICONDUCTOR MARKING Search Results

V40100K

Contextual Info: V40100K www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES TMBS • 150 °C high performance Schottky diode TO-220AB • Very low forward voltage drop • Optimized VF vs. IR trade off for high efficiency

V40100K

Contextual Info: New Product V40100K Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • 150 °C high performance Schottky diode TMBS TO-220AB • Very low forward voltage drop • Optimized VF vs. IR trade off for high efficiency

BRIDGE-RECTIFIER

Abstract: 2 Amp rectifier diode DC IR Bridge Rectifier BRIDGE RECTIFIER full wave bridge rectifier CBRHD-01 bridge rectifier 40 amp 120mm2
Contextual Info: Central CBRHD-01 TM Semiconductor Corp. HIGH DENSITY 0.8 AMP DUAL IN LINE BRIDGE RECTIFIER FEATURES: • Truly efficient use of board space, requires only 42mm2 of board space vs. 120mm2 of board space for industry standard 1.0 Amp surface mount bridge rectifier.

CBD6

Abstract: cbd4 CBD10 2 Amp rectifier diode diode marking codes on semiconductor CBRHD02 CBRHD-02 CBRHD04 CBRHD-04 CBRHD06
Contextual Info: Central CBRHD SERIES TM Semiconductor Corp. HIGH DENSITY ½ AMP DUAL IN LINE BRIDGE RECTIFIER FEATURES: • Truly efficient use of board space, requires only 42mm2 of board space vs. 120mm2 of board space for industry standard 1.0 Amp surface mount bridge rectifier.

V40100K

Contextual Info: New Product V40100K Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES TMBS • 150 °C high performance Schottky diode TO-220AB • Very low forward voltage drop • Optimized VF vs. IR trade off for high efficiency

V40100K

Contextual Info: New Product V40100K Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • 150 °C high performance Schottky diode TMBS TO-220AB • Very low forward voltage drop • Optimized VF vs. IR trade off for high efficiency

V40100K

Contextual Info: New Product V40100K Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES TMBS • 150 °C high performance Schottky diode TO-220AB • Very low forward voltage drop • Optimized VF vs. IR trade off for high efficiency

J-STD-002

Abstract: V40100K
Contextual Info: New Product V40100K Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES TMBS • 150 °C high performance Schottky diode TO-220AB • Very low forward voltage drop • Optimized VF vs. IR trade off for high efficiency

V40100K

Contextual Info: New Product V40100K Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • 150 °C high performance Schottky diode TMBS TO-220AB • Very low forward voltage drop • Optimized VF vs. IR trade off for high efficiency

0043 hd

Contextual Info: Central CBRHD SERIES Semiconductor Corp. HIGH DENSITY V2 AMP DUAL IN LINE BRIDGE RECTIFIER HD FEATURES: • Truly efficient use of board space, requires only 42mm2 of board space vs. 120mm2 of board space for industry standard 1.0 Amp surface mount bridge rectifier.

R1 marking

Contextual Info: Central CBRHD SERIES Semiconductor Corp. HIGH DENSITY V i AMP DUAL IN LINE BRIDGE RECTIFIER HDBRIDGE FEATURES: • Truly efficient use of board space, requires only 42mm2 of board space vs. 120mm2 of board space for industry standard 1.0 Amp surface mount bridge rectifier.

Contextual Info: SANYO SEMICONDUCTOR CORP Y' ,v%;* •"VS■.y~ ;•• BSE D EJ 7^707^ OOOÖOfib 2 E3 T -7 4 -0 5 -0 1 CMOS 1C 3020A 2207B 12V-Operat@d Single-Channel Electronic Volum e Control Use . Attenuation of signal Features . CMOS process . Up/down operation is performed with switch input.

ci 94vo

Abstract: vqc 10 d MARKING 1F vqc 10 C HERF1601G HERF1608G
Contextual Info: Sb HERF1601G - HERF1608G TAIWAN SEMICONDUCTOR tò RoHS Isolated 16.0 A M PS. Glass Passivated High Efficient Rectifiers 1IQ -220AB COMPLIANCE V-'vS. _i*;i i!]_ u>< . imi* ¿¿am .HASS?¥>.%/ iw» r.i F e a tu re s ^ G la s s p s s s iv a te d c h ip ju n ction.

C-030

Abstract: MMBFJ110
Contextual Info: MMBFJ110 N-Channel Switch SuperSOT-3 Features 3 • This device is designed for digital switching applications where very low on resistance is mandatory. • Sourced from process 58. 2 Marking : 110 1 1. Drain 2. Source 3. Gate Absolute Maximum Ratings* TA=25°C unless otherwise noted

J108

Abstract: MMBFJ108
Contextual Info: N-Channel Switch 3 • This device is designed for digital switching applications where very low on resistance is mandatory. • Sourced from Process 58. 2 1 TO-92 1. Drain 2. Source 3. Gate 1 SuperSOT-3 Marking: I8 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TA=25°C unless otherwise noted

J109

Contextual Info: N-Channel Switch 3 • This device is designed for digital switching applications where very low on resistance is mandatory. • Sourced from Process 58. 2 1 TO-92 1. Drain 2. Source 3. Gate 1 SuperSOT-3 Marking: I8 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TA=25°C unless otherwise noted

Contextual Info: MMBD1201 / 1202 / 1203 / 1204 / 1205 Small Signal Diodes Connection Diagram 1201 3 1202 3 3 3 24 1 2 1 1203 3 SOT-23 1 Symbol 2 3 1204 1 2 2 1205 3 1 Absolute Maximum Ratings* 1NC 2 MARKING MMBD1201 24 MMBD1202 25 MMBD1203 26 MMBD1204 27 MMBD1205 28 1 2NC

MMBD1201

Abstract: MMBD1202 MMBD1203 MMBD1204 MMBD1205
Contextual Info: MMBD1201 / 1202 / 1203 / 1204 / 1205 Small Signal Diodes Connection Diagram 1201 3 3 1202 3 3 24 1 2 1 1203 3 SOT-23 1 Symbol 2 3 1204 1 2 2 1205 3 1 Absolute Maximum Ratings* 1NC 2 MARKING MMBD1201 24 MMBD1202 25 MMBD1203 26 MMBD1204 27 MMBD1205 28 1 2NC

1403A

Abstract: DIODE A34 1404a transistor 1403A MMBD1401A MMBD1403A MMBD1404A MMBD1405A FAIRCHILD DIODE
Contextual Info: Connection Diagram 1401A 1403A 3 3 3 3 A29 1 2NC 2 1 1 2 1404A 2 1 3 3 1405A MARKING SOT-23 MMBD1401A A29 MMBD1404A A33 MMBD1403A A32 MMBD1405A A34 2 1 1 2 High Voltage General Purpose Diode Sourced from Process 2V. Absolute Maximum Ratings * TA = 25°C unless otherwise noted

Contextual Info: Connection Diagram 1401A 1403A 3 3 3 3 A29 1 2 1 1 2 1404A 2NC 2 1 3 3 1405A MARKING SOT-23 MMBD1401A A29 MMBD1404A A33 MMBD1403A A32 MMBD1405A A34 2 1 1 2 High Voltage General Purpose Diode Sourced from Process 2V. Absolute Maximum Ratings * TA = 25°C unless otherwise noted

Contextual Info: Connection Diagram 4148 4148SE 3 3 3 3 5H 2 1 1 4148CC MARKING 5H MMBD4148CA D6 MMBD4148 MMBD4148CC D5 MMBD4148SE D4 SOT-23 2 1 1 2 3 3 2 1 1 4148CA 2 Small Signal Diode Absolute Maximum Ratings * Symbol VRRM TA = 25°C unless otherwise noted Parameter Maximum Repetitive Reverse Voltage

4148CA

Abstract: 4148SE MMBD4148 MMBD4148CA MMBD4148CC MMBD4148SE
Contextual Info: Connection Diagram 4148 4148SE 3 3 3 3 5H 2 1 1 4148CC MARKING 5H MMBD4148CA D6 MMBD4148 MMBD4148CC D5 MMBD4148SE D4 SOT-23 2 1 1 2 3 3 2 1 1 4148CA 2 Small Signal Diode Absolute Maximum Ratings * TA = 25°C unless otherwise noted Symbol VRRM Parameter Maximum Repetitive Reverse Voltage

2n5551

Abstract: 2N5551 SOT23
Contextual Info: 2N5551 / MMBT5551 NPN General-Purpose Amplifier Description This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers. 2N5551 MMBT5551 3 2 TO-92 1 SOT-23 Marking: 3S 1. Base 2. Emitter 3. Collector Ordering Information 1

Contextual Info: J105 / J106 / J107 N-Channel Switch Description This device is designed for analog or digital switching applications where very low on resistance is mandatory. Sourced from Process 59. Ordering Informations Part Number Marking J105 J105 J106 J106 J107 J107