VS SEMICONDUCTOR MARKING Search Results

V40100K

Contextual Info: V40100K www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES TMBS • 150 °C high performance Schottky diode TO-220AB • Very low forward voltage drop • Optimized VF vs. IR trade off for high efficiency

V40100K

Contextual Info: New Product V40100K Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • 150 °C high performance Schottky diode TMBS TO-220AB • Very low forward voltage drop • Optimized VF vs. IR trade off for high efficiency

BRIDGE-RECTIFIER

Abstract: 2 Amp rectifier diode DC IR Bridge Rectifier BRIDGE RECTIFIER full wave bridge rectifier CBRHD-01 bridge rectifier 40 amp 120mm2
Contextual Info: Central CBRHD-01 TM Semiconductor Corp. HIGH DENSITY 0.8 AMP DUAL IN LINE BRIDGE RECTIFIER FEATURES: • Truly efficient use of board space, requires only 42mm2 of board space vs. 120mm2 of board space for industry standard 1.0 Amp surface mount bridge rectifier.

CBD6

Abstract: cbd4 CBD10 2 Amp rectifier diode diode marking codes on semiconductor CBRHD02 CBRHD-02 CBRHD04 CBRHD-04 CBRHD06
Contextual Info: Central CBRHD SERIES TM Semiconductor Corp. HIGH DENSITY ½ AMP DUAL IN LINE BRIDGE RECTIFIER FEATURES: • Truly efficient use of board space, requires only 42mm2 of board space vs. 120mm2 of board space for industry standard 1.0 Amp surface mount bridge rectifier.

V40100K

Contextual Info: New Product V40100K Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES TMBS • 150 °C high performance Schottky diode TO-220AB • Very low forward voltage drop • Optimized VF vs. IR trade off for high efficiency

V40100K

Contextual Info: New Product V40100K Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • 150 °C high performance Schottky diode TMBS TO-220AB • Very low forward voltage drop • Optimized VF vs. IR trade off for high efficiency

V40100K

Contextual Info: New Product V40100K Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES TMBS • 150 °C high performance Schottky diode TO-220AB • Very low forward voltage drop • Optimized VF vs. IR trade off for high efficiency

J-STD-002

Abstract: V40100K
Contextual Info: New Product V40100K Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES TMBS • 150 °C high performance Schottky diode TO-220AB • Very low forward voltage drop • Optimized VF vs. IR trade off for high efficiency

V40100K

Contextual Info: New Product V40100K Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • 150 °C high performance Schottky diode TMBS TO-220AB • Very low forward voltage drop • Optimized VF vs. IR trade off for high efficiency

0043 hd

Contextual Info: Central CBRHD SERIES Semiconductor Corp. HIGH DENSITY V2 AMP DUAL IN LINE BRIDGE RECTIFIER HD FEATURES: • Truly efficient use of board space, requires only 42mm2 of board space vs. 120mm2 of board space for industry standard 1.0 Amp surface mount bridge rectifier.

R1 marking

Contextual Info: Central CBRHD SERIES Semiconductor Corp. HIGH DENSITY V i AMP DUAL IN LINE BRIDGE RECTIFIER HDBRIDGE FEATURES: • Truly efficient use of board space, requires only 42mm2 of board space vs. 120mm2 of board space for industry standard 1.0 Amp surface mount bridge rectifier.

Contextual Info: SANYO SEMICONDUCTOR CORP Y' ,v%;* •"VS■.y~ ;•• BSE D EJ 7^707^ OOOÖOfib 2 E3 T -7 4 -0 5 -0 1 CMOS 1C 3020A 2207B 12V-Operat@d Single-Channel Electronic Volum e Control Use . Attenuation of signal Features . CMOS process . Up/down operation is performed with switch input.

ci 94vo

Abstract: vqc 10 d MARKING 1F vqc 10 C HERF1601G HERF1608G
Contextual Info: Sb HERF1601G - HERF1608G TAIWAN SEMICONDUCTOR tò RoHS Isolated 16.0 A M PS. Glass Passivated High Efficient Rectifiers 1IQ -220AB COMPLIANCE V-'vS. _i*;i i!]_ u>< . imi* ¿¿am .HASS?¥>.%/ iw» r.i F e a tu re s ^ G la s s p s s s iv a te d c h ip ju n ction.

C-030

Abstract: MMBFJ110
Contextual Info: MMBFJ110 N-Channel Switch SuperSOT-3 Features 3 • This device is designed for digital switching applications where very low on resistance is mandatory. • Sourced from process 58. 2 Marking : 110 1 1. Drain 2. Source 3. Gate Absolute Maximum Ratings* TA=25°C unless otherwise noted

J108

Abstract: MMBFJ108
Contextual Info: N-Channel Switch 3 • This device is designed for digital switching applications where very low on resistance is mandatory. • Sourced from Process 58. 2 1 TO-92 1. Drain 2. Source 3. Gate 1 SuperSOT-3 Marking: I8 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TA=25°C unless otherwise noted

J109

Contextual Info: N-Channel Switch 3 • This device is designed for digital switching applications where very low on resistance is mandatory. • Sourced from Process 58. 2 1 TO-92 1. Drain 2. Source 3. Gate 1 SuperSOT-3 Marking: I8 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TA=25°C unless otherwise noted

Contextual Info: MMBD1201 / 1202 / 1203 / 1204 / 1205 Small Signal Diodes Connection Diagram 1201 3 1202 3 3 3 24 1 2 1 1203 3 SOT-23 1 Symbol 2 3 1204 1 2 2 1205 3 1 Absolute Maximum Ratings* 1NC 2 MARKING MMBD1201 24 MMBD1202 25 MMBD1203 26 MMBD1204 27 MMBD1205 28 1 2NC

MMBD1201

Abstract: MMBD1202 MMBD1203 MMBD1204 MMBD1205
Contextual Info: MMBD1201 / 1202 / 1203 / 1204 / 1205 Small Signal Diodes Connection Diagram 1201 3 3 1202 3 3 24 1 2 1 1203 3 SOT-23 1 Symbol 2 3 1204 1 2 2 1205 3 1 Absolute Maximum Ratings* 1NC 2 MARKING MMBD1201 24 MMBD1202 25 MMBD1203 26 MMBD1204 27 MMBD1205 28 1 2NC

Contextual Info: BSR18A PNP General-Purpose Amplifier Description C This device is designed as a general-purpose amplifier for switching applications at collector currents of 10 A to 100 mA. Sourced from process 66. E SOT-23 Mark: T92 B Ordering Information Part Number Marking

1403A

Abstract: DIODE A34 1404a transistor 1403A MMBD1401A MMBD1403A MMBD1404A MMBD1405A FAIRCHILD DIODE
Contextual Info: Connection Diagram 1401A 1403A 3 3 3 3 A29 1 2NC 2 1 1 2 1404A 2 1 3 3 1405A MARKING SOT-23 MMBD1401A A29 MMBD1404A A33 MMBD1403A A32 MMBD1405A A34 2 1 1 2 High Voltage General Purpose Diode Sourced from Process 2V. Absolute Maximum Ratings * TA = 25°C unless otherwise noted

Contextual Info: BCW68G PNP General-Purpose Amplifier Description C This device is designed for general-purpose amplifier and switching applications at currents to 500 mA. Sourced from process 63. E SOT-23 Mark: DG B Ordering Information Part Number Marking Package Packing Method

Contextual Info: Connection Diagram 1401A 1403A 3 3 3 3 A29 1 2 1 1 2 1404A 2NC 2 1 3 3 1405A MARKING SOT-23 MMBD1401A A29 MMBD1404A A33 MMBD1403A A32 MMBD1405A A34 2 1 1 2 High Voltage General Purpose Diode Sourced from Process 2V. Absolute Maximum Ratings * TA = 25°C unless otherwise noted

Contextual Info: Connection Diagram 4148 4148SE 3 3 3 3 5H 2 1 1 4148CC MARKING 5H MMBD4148CA D6 MMBD4148 MMBD4148CC D5 MMBD4148SE D4 SOT-23 2 1 1 2 3 3 2 1 1 4148CA 2 Small Signal Diode Absolute Maximum Ratings * Symbol VRRM TA = 25°C unless otherwise noted Parameter Maximum Repetitive Reverse Voltage

4148CA

Abstract: 4148SE MMBD4148 MMBD4148CA MMBD4148CC MMBD4148SE
Contextual Info: Connection Diagram 4148 4148SE 3 3 3 3 5H 2 1 1 4148CC MARKING 5H MMBD4148CA D6 MMBD4148 MMBD4148CC D5 MMBD4148SE D4 SOT-23 2 1 1 2 3 3 2 1 1 4148CA 2 Small Signal Diode Absolute Maximum Ratings * TA = 25°C unless otherwise noted Symbol VRRM Parameter Maximum Repetitive Reverse Voltage