VS 2003 AP Search Results

A700

Abstract: T520 cwr capacitor
Contextual Info: Derating Differences Ta/Ta-Polymer/ Al-Polymer 2003 CARTS by John Prymak Applications Manager P.O. Box 5928 Greenville, SC 29606 Phone 864 963-6300 Fax (864) 963-66521 www.kemet.com F2119 12/04 Derating differences in Tantalum-MnO2 vs. Tantalum-Polymer vs. Aluminum-Polymer

APT0201

Abstract: APT0202 12 VOLT 10 AMP smps 12 VOLT 2 AMP smps circuit mosfet 300 volt 12 VOLT 100 AMP smps dodge high current IGBT based buck converter IGBT 400 amp IGBT cross
Contextual Info: Application Note APT0302 Rev. A April 4, 2003 Latest Technology PT IGBTs vs. Power MOSFETs Jonathan Dodge, P.E. Senior Applications Engineer Advanced Power Technology 405 S.W. Columbia Street Bend, OR 97702 USA Based on a paper presented at PCIM China 2003

can transceiver lumped capacitance

Abstract: GTO Driver DS91C176 DSAE001816
Contextual Info: Lumped vs TLine Simulation Study Interface Products January 2003 1 This simulation study compares a LVCMOS output driving a lumped cap load vs. various length transmission lines. The goal of this study was to determine at what length does the line act as a

Contextual Info: Project Number: NA Tracking Code: TC0342-0297 Requested by: Mark Shireman Date: 10/16/2003 Part #: SQW-140-01-S-D-VS-A/TMM-140-01-S-D-SM-A Product Rev: NA Lot #: NA Tech: Troy Cook Part description: Socket/Terminal Strip Test Start: 11/02/2003 Eng: John Tozier

RD01MUS1

Abstract: micro strip line MITSUBISHI APPLICATION NOTE RF POWER
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-019 Date : 9th Jan. 2003 Prepared : T.Akaishi S.Kametani Confirmed : T.Ohkawa SUBJECT: RD01MUS1 RF characteristics data SUMMARY: This application note show the RF characteristics Pin vs. Pout characteristics data with

AN-UHF-027-B

Abstract: RD07MVS1 adj 2576 6926 b 946 MITSUBISHI APPLICATION NOTE RF POWER mitsubishi 5247
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-027-B Date : 16th Oct. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD07MVS1 RF characteristics data SUBJECT: SUMMARY: This application note show the RF Wide band DUT characteristics data Po vs. Frequency

RD07MVS1

Abstract: micro strip line
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-018-B Date : 12th jun. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD07MVS1 RF characteristics data SUBJECT: SUMMARY: This application note show the RF characteristics Pin vs. Pout characteristics data and

HS-1840ARH

Abstract: HS-1840RH TB402 HS-1840
Contextual Info: Avoiding Excessive Supply Current in the HS-1840ARH During Start-Up Technical Brief January 2003 Description TB402 Schematic If the supply voltages +Vs and -Vs and reference voltage (Vref) to the HS-1840ARH are not sequenced properly, it is possible that excessive supply current will flow during startup. The maximum current that can flow from either supply

K2057

Abstract: toshiba k2057 tpc8107 equivalent 2SK2313 equivalent 2SK794 2sK2750 equivalent 2SK2996 equivalent 2SK1379 2SK2610 equivalent 2SK3662
Contextual Info: 2003-5 BCE0017A PRODUCT GUIDE Power MOSFETs 2003 http://www.semicon.toshiba.co.jp/eng 2 C 1 2 3 4 O N T E N Features and Structure New Power MOSFET Products Selection Guide Power MOSFET Characteristics 1. SOP-8 Series 2. VS-6 / 8 Series, PS-8 Series 3. TFP Thin Flat Package Series

RD07MVS1

Abstract: RD01MUS1 17mml MITSUBISHI APPLICATION NOTE RF POWER gp 735
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-006 Date : 21th Aug. 2003 Prepared : M.Wada Confirmed : T.Ohkawa RD07MVS1 & RD01MUS1 RF characteristics data at 800MHz Band. SUBJECT: SUMMARY: This application note show the RF Wide band characteristics data Po vs. Frequency

MSP430

Abstract: TLV2620 TLV2621 TLV2622 TLV2623 TLV2624 TLV2625
Contextual Info: TLV2620, TLV2621, TLV2622, TLV2623, TLV2624, TLV2625 FAMILY OF LOWĆPOWER WIDE BANDWIDTH SINGLE SUPPLY OPERATIONAL AMPLIFIERS WITH SHUTDOWN SLOS251C − DECEMBER 2000 − REVISED DECEMBER 2003 D D + − DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE vs FREQUENCY

MSP430

Abstract: TLV2620 TLV2621 TLV2622 TLV2623 TLV2624 TLV2625
Contextual Info: TLV2620, TLV2621, TLV2622, TLV2623, TLV2624, TLV2625 FAMILY OF LOWĆPOWER WIDE BANDWIDTH SINGLE SUPPLY OPERATIONAL AMPLIFIERS WITH SHUTDOWN SLOS251C − DECEMBER 2000 − REVISED DECEMBER 2003 D D + − DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE vs FREQUENCY

RD01MUS1

Abstract: RD07MVS1 848/b+5891
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-VHF-013Date : 11th Nov. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD01MUS1 & RD07MVS1 VHF wide band matching circuit characteristics SUBJECT: SUMMARY: This application note shows the RF characteristics data for VHF wide band Po vs. Frequency

banana jack footprint

Contextual Info: THS9000 www.ti.com SLOS425B – DECEMBER 2003 – REVISED APRIL 2006 50 MHz to 400 MHz CASCADEABLE AMPLIFIER FEATURES APPLICATIONS • • • • • High Dynamic Range – OIP3 = 36 dBm – NF < 4.5 dB Single Supply Voltage High Speed – VS = 3 V to 5 V

Contextual Info: THS9000 www.ti.com SLOS425A – DECEMBER 2003 – REVISED FEBRUARY 2004 50 MHz to 400 MHz CASCADEABLE AMPLIFIER FEATURES APPLICATIONS • • • • • High Dynamic Range – OIP3 = 36 dBm – NF < 4.5 dB Single Supply Voltage High Speed – VS = 3 V to 5 V

Contextual Info: THS9001 www.ti.com SLOS426B – NOVEMBER 2003 – REVISED JANUARY 2007 50 MHz to 350 MHz CASCADEABLE AMPLIFIER FEATURES APPLICATIONS • • • • • High Dynamic Range – OIP3 = 36 dBm – NF < 4.5 dB Single Supply Voltage High Speed – VS = 3 V to 5 V

Contextual Info: THS9000 www.ti.com SLOS425C – DECEMBER 2003 – REVISED FEBRUARY 2007 50 MHz to 400 MHz CASCADEABLE AMPLIFIER FEATURES APPLICATIONS • • • • • High Dynamic Range – OIP3 = 36 dBm – NF < 4.5 dB Single Supply Voltage High Speed – VS = 3 V to 5 V

Contextual Info: THS9001 www.ti.com SLOS426A – NOVEMBER 2003 – REVISED FEBRUARY 2004 50 MHz to 350 MHz CASCADEABLE AMPLIFIER FEATURES APPLICATIONS • • • • • High Dynamic Range – OIP3 = 36 dBm – NF < 4.5 dB Single Supply Voltage High Speed – VS = 3 V to 5 V

08055C104KAT2A

Abstract: optical amplifiers s-parameters IS-136 THS9001 THS9001DBVR THS9001DBVT 131G 8749 MICROCONTROLLER
Contextual Info: THS9001 www.ti.com SLOS426A – NOVEMBER 2003 – REVISED FEBRUARY 2004 50 MHz to 350 MHz CASCADEABLE AMPLIFIER FEATURES APPLICATIONS • • • • • High Dynamic Range – OIP3 = 36 dBm – NF < 4.5 dB Single Supply Voltage High Speed – VS = 3 V to 5 V

08055C104KAT2A

Abstract: IS-136 THS9001 THS9001DBVR THS9001DBVT 142-0701-801
Contextual Info: THS9001 www.ti.com SLOS426B – NOVEMBER 2003 – REVISED JANUARY 2007 50 MHz to 350 MHz CASCADEABLE AMPLIFIER FEATURES APPLICATIONS • • • • • High Dynamic Range – OIP3 = 36 dBm – NF < 4.5 dB Single Supply Voltage High Speed – VS = 3 V to 5 V

Contextual Info: THS9000 www.ti.com SLOS425A – DECEMBER 2003 – REVISED FEBRUARY 2004 50 MHz to 400 MHz CASCADEABLE AMPLIFIER FEATURES APPLICATIONS • • • • • High Dynamic Range – OIP3 = 36 dBm – NF < 4.5 dB Single Supply Voltage High Speed – VS = 3 V to 5 V

08055C104KAT2A

Abstract: Sawtek filter video transmitter 2.4 GHz IS-136 SLMA002 THS9000 THS9000DRDR THS9000DRDT optical amplifiers s-parameters
Contextual Info: THS9000 www.ti.com SLOS425A – DECEMBER 2003 – REVISED FEBRUARY 2004 50 MHz to 400 MHz CASCADEABLE AMPLIFIER FEATURES APPLICATIONS • • • • • High Dynamic Range – OIP3 = 36 dBm – NF < 4.5 dB Single Supply Voltage High Speed – VS = 3 V to 5 V

Contextual Info: THS9000 www.ti.com SLOS425C – DECEMBER 2003 – REVISED FEBRUARY 2007 50 MHz to 400 MHz CASCADEABLE AMPLIFIER FEATURES APPLICATIONS • • • • • High Dynamic Range – OIP3 = 36 dBm – NF < 4.5 dB Single Supply Voltage High Speed – VS = 3 V to 5 V

Contextual Info: THS9000 www.ti.com SLOS425C – DECEMBER 2003 – REVISED FEBRUARY 2007 50 MHz to 400 MHz CASCADEABLE AMPLIFIER FEATURES APPLICATIONS • • • • • High Dynamic Range – OIP3 = 36 dBm – NF < 4.5 dB Single Supply Voltage High Speed – VS = 3 V to 5 V