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    VQE 23 C Search Results

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    VQE 23 C Price and Stock

    Advantech Co Ltd

    Advantech Co Ltd AGS-CTOS-SV-QEOT

    Calibration, Warranties, & Service Plans Sandvine Quarter End Overtime
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    Mouser Electronics () AGS-CTOS-SV-QEOT
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    AGS-CTOS-SV-QEOT
    • 1 $8750.00
    • 10 $8750.00
    • 100 $8750.00
    • 1000 $8750.00
    • 10000 $8750.00
    Get Quote

    VQE 23 C Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor c374

    Abstract: transistor c373 transistor c377
    Contextual Info: International [^Rectifier P D -9.1143 IRGBC30MD2-S Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces = 600V Short circuit rated -1 Ops @ 125°C, V qe = 15V Switching-loss rating includes all "tail" losses


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    IRGBC30MD2-S 10kHz) high-volta379 SMD-220 C-380 transistor c374 transistor c373 transistor c377 PDF

    Contextual Info: International P D - 9.1032 ^R ectifier IRGPC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve


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    IRGPC30U 100pical 5545E O-247AC PDF

    Contextual Info: International pd-9.1628 IGR Rectifier IRG4 PC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


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    PC30W PDF

    Contextual Info: PD -9.1689 International IGR Rectifier IRG4IBC20KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • High switching speed optimized for up to 25kHz With lOW V C E o n • Short Circuit Rating 10ps @ 125°C, Vge = 15V


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    IRG4IBC20KD 25kHz T0-220 PDF

    transistor c925

    Abstract: DIODE C921
    Contextual Info: P D - 9.1142 International [ËjüRectffier IRGBC30KD2-S Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Short circuit rated -10ns @125°C, VGe = 15V Switching-loss rating includes all "tail" losses


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    IRGBC30KD2-S -10ns D020717 SMD-220 C-928 transistor c925 DIODE C921 PDF

    WE VQE 23 F

    Abstract: WE VQE 23 E WE VQE 11 E 1RG4BC30K-S
    Contextual Info: International IöR Rectifier PD - 9.1619A 1RG4BC30K-S PRELIMINARY Short Circuit Rated _ UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • High short circuit rating optimized for motor control, tsc=10MS, @360V VCE start , T j = 125°C,


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    1RG4BC30K-S generati08 WE VQE 23 F WE VQE 23 E WE VQE 11 E 1RG4BC30K-S PDF

    Contextual Info: International BUlRectifier IRGPC50S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT PD - 9.694A Features • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve


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    IRGPC50S 400Hz) O-247AC 5S452 PDF

    Contextual Info: PD - 9 .1 6 1 9 A International I R Rectifier 1RG4BC30K-S PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • High short circuit rating optimized for motor control, tsc =10ps, @ 360V VCE start , T j = 125°C,


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    1RG4BC30K-S S54SH PDF

    Contextual Info: International ^Rectifier PD - 9.684A IRGPC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail” losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve


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    IRGPC40U 100ase D2D47S O-247AC Q02DM7b PDF

    VPT05155

    Abstract: bup410d
    Contextual Info: SIEMENS SGP04N60 P relim in ary d ata IGBT • Low forward voltage drop • High switching speed VPT05155 • Low tail current 1 • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type VCE SGP04N60 600V 4A Pin 3 E C Package Ordering Code TO-220 AB Q67040-A . . . .


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    SGP04N60 SGP04N60 T05155 Q67040-A O-220 BUP410D Apr-07-1998 GPT05155 VPT05155 bup410d PDF

    Contextual Info: PD -9.1656B International I R Rectifier IRG4PC40W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power • • • • V ces = 6 0 0 V Supply and P F C power factor correction applications Industry-benchmark switching losses improve


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    1656B IRG4PC40W 554S2 PDF

    Contextual Info: MOTOROLA Order thle document by MHPM7B12A120A/D SEMICONDUCTOR TECHNICAL DATA MHPM7B12A120A Hybrid Power Module Motorola Pwfttrod Dovtco Integrated Power Stage for 2.0 hp Motor Drives This module Integrates a 3-phase Input rectifier bridge, 3-phase output Inverter and brake transistor/diode In a single convenient package. The output


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    MHPM7B12A120A/D MHPM7B12A120A PDF

    Contextual Info: International IQR Rectifier PD -5.044 CPV362M4U PRELIMINARY IGBT SIP MODULE Features • • • • UltraFast IGBT Fully isolated printed circuit board mount package Switching-loss rating includes all "tail“ losses HEXFRED soft ultrafast diodes Optimized for high operating frequency over 5kHz


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    CPV362M4U PDF

    Contextual Info: International pmia ^Rectifier_ IRGMC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


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    IRGMC40U MIL-S-1950G T0-254 S54S2 PDF

    2SC2714

    Abstract: transistor C5D marking 9rb
    Contextual Info: T O S H IB A 2SC2714 TOSHIBA TRANSISTOR 2SC2714 SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS Unit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS. + 0.5 2 .5 - I1 3 + 0 .2 5 1 .5 - Q .l 5 I1 FM, RF, MIX, IF AM PLIFIER APPLICATIONS. FEATURES : • Small Reverse Transfer Capacitance: Cre = 0.7pF (Typ.)


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    2SC2714 100MHz) SC-59 2SC2714 transistor C5D marking 9rb PDF

    Contextual Info: PD - 9 .1 4 5 5 A International I R Rectifier IRG4BC40S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • S ta n d a rd : O p tim ize d fo r m in im u m saturation Vces = 600V v o lta g e an d low operating fre q u e n c ie s < 1 kH z


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    IRG4BC40S PDF

    Contextual Info: PD 9.1451A International IOR Rectifier IRG4BC30FD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode .


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    IRG4BC30FD T0-220AB 5SM52 PDF

    Contextual Info: PD 9.1453A International IO R Rectifier IRG4BC30UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode


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    IRG4BC30UD T0-220AB PDF

    transistor C618

    Abstract: c618 diode c617 transistor
    Contextual Info: International jajRectffier_ IRGB420UD2 p d INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE -# .« » UltraFast CoPack IGBT Features V ces = 500V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes


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    IRGB420UD2 O-22QAB transistor C618 c618 diode c617 transistor PDF

    Contextual Info: International içrç]Rectifier Preliminary Data Sheet PD - 9.1139 IRGPH30S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features * Switching-loss rating includes all "tail” losses • Optimized for line frequency operation to 400Hz V C ES = 1200V


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    IRGPH30S 400Hz) O-247AC MA55MS2 PDF

    Contextual Info: I . . I P D -5.039 International XQR Rectifier IGBT SIP MODULE Features • • • • C P V 363 M4 U preliminart UltraFast IGBT 1 I Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses HEXFRED soft ultrafast diodes


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    360Vdc, MAS5M52 PDF

    transistor c246

    Abstract: transistor c245 c245 transistor
    Contextual Info: PD - 9.773 International üüRectffier IRGBF30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features JI* Lc J *.J • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve


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    IRGBF30F 10kHz) O-220AB C-247 46S5455 TQ-220AB C-248 transistor c246 transistor c245 c245 transistor PDF

    Contextual Info: International IM] Rectifier PD - 9.783A IRGB430U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1for Current vs. Frequency curve


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    IRGB430U O-220AB 0G20375 TQ-220AB 4ASS452 02037b PDF

    7B30A60B

    Abstract: diode pk 752 inverter 3phase 220 volt pms Bridge Rectifier
    Contextual Info: MOTOROLA Order this document by MHPM7B30A80B/D SEMICONDUCTOR TECHNICAL DATA M HPM 7B30A60B Hybrid Power Module Meters!« Praftmd Devtee Integrated Power Stage for 3.0 hp Motor Drives This module Integrates a 3-phase Input rectifier bridge, 3-phase output Inverter and brake translstor/dlode In a single convenient package. The output


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    MHPM7B30A80B/D 7B30A60B 260tuatfon 7B30A60B diode pk 752 inverter 3phase 220 volt pms Bridge Rectifier PDF