VQE 14 Search Results

2SA1300

Contextual Info: TOSHIBA 2SA1300 2 S A 1 300 TOSHIBA TRANSISTOR STROBO FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm M EDIUM PO W ER AM PLIFIER APPLICATIONS • High DC Current Gain and Excellent hEE Linearity : hFE (1) = 140-600 (Vqe = - IV, Iq = -0.5A)

5842s

Abstract: 5841A
Contextual Info: ABSOLUTE MAXIMUM RATINGS at 25°C Free-Air Temperature Output Voltage, Vqe UCN5841A& A5841SLW . 50 V (UCN5842A & A5842SLW ). 80 V Output Voltage, V C e ( su s ) (UCN5841A & A5841SLW) . . . . 35 V f (UCN5842A & A5842SLW) . . . . 50 V f Logic Supply Voltage Range,

C965 transistor

Abstract: transistor c965 transistor c964
Contextual Info: PD - 5.032 International S» ]Rectifier CPV362MK IGBT SIP MODULE Features Short Circuit Rated UltraFast IGBT • Short Circuit Rated - 10ps @ 125°C, Vqe = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses

Contextual Info: bitemational ^Rectifier PD - 9.1073 IRGBC40K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

OCT9600

Abstract: mobile switching center (msc) Mobile Switch Center MSC
Contextual Info: O OC C T 9 6 0 0 SS ee rr ii ee ss Voice Quality/Echo Cancellation Modules Increasing system density while improving voice quality The OCT9600 Series of voice processor modules performs high quality echo cancellation and Voice Quality Enhancements VQE at extremely

Contextual Info: P D -9.1127 International K>ÎLRectifier IRGBC20M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

LE C346

Contextual Info: International Rectifier P D -9.1133 IRGBC30M-S Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10 ms @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

c879 transistor

Contextual Info: PD- 9.1075 International BagRectifier IRGPC30K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

Contextual Info: International i“RjRectifier PD - 9.1297 IRGPC60M PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features c • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz

A0937

Abstract: 1N4532 at-614 1N3600 1N4148-1 JANTXV 1N4148UR-1 1N4148-1 1N4148-1 JAN 1N4531UR JANTX 1N4148-1
Contextual Info: DEFENSE LOGISTICS AGENCY DEFENSE SUPPLY CENTER, COLUMBUS POST OFFICE BOX 3990 COLUMBUS, OH 43218-3990 IN REPLY REFER DSCC-VQ VQE-1 o-019452/Mr. December 18, 2009 Deslich/614-692-0593/bpd TO SUBJECT: Notification of Qualification, MIL-PRF-19500N, FSC 5961

Contextual Info: MG25Q1BS11 T O SH IB A M G 2 5 Q 1 BS1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance HighSpeed : tf=1.0,«s Max. Low Saturation Voltage : VQE(sat) = 2.7V (Max.)

TRANSISTOR C307

Abstract: transistor c308
Contextual Info: International IK» 1Rectifier P D - 9 .1 0 7 2 IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

2Sa1491 SANKEN

Contextual Info: POWER TRANSISTORS i iifi PNP POWER TRANSISTORS Absolute M axim um Ratings Type No. Electrical Characteristics at TA = 25°C Pc VcBO VcEO V ebo Ic 3 ICB0 I eso ^ [BP. CEO hFE VcE tat) <W) (V) (V) (V) (A) (A) Max @ VCB Max @ V fB Min @ lc Min @ lç @ Vqe Max. @ lc @ lB

Contextual Info: MITSUBISHI IGBT MODULES CM300DY-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: 3 TYP N— — N -T A B # 1 10 t=0.5 Q —m - h K- i ' I i N -O ü -O lü - -O Low Drive Power □ □ Low VQE(sat) Discrete Super-Fast Recovery Free-Wheel Diode

2SB15

Abstract: 2SB1508 KFU508 SB15 TI5C 37143
Contextual Info: [^O rdering n u m b e r: EN3714 2SB1508/2SD2281 PN P/N PN E pitaxial Planar Silicon Transistors H igh-C urrent Switching Applications Applications • Relay drivers, high-speed inverters, converters. F e a tu r e s • Low collector-to-em itter satu ratio n voltage : VQE sat = —0.5V(PNP), 0.4V(NPN)max.

RG-910

Abstract: 2mb1100 2MBI100PC-140 ic l00a M233
Contextual Info: 2MBI100PC-140 IG B T M o d u le s IGBT Modules P s e rie s 1400V/100A 2 in one-package • Features • Small temperature dependence of the turn-off switching loss • Easy to connect in parallel •W ide RBSOA square up to 2 times of rated current and high shortcircuit withstand capability

Marking ANs

Abstract: Transistor C 5198 b 514 transistor BFP450
Contextual Info: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P. 1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency fT = 24 GHz • Gold metalization for high reliability

2mb150

Abstract: 2MBI50P-140 M232 BT modules Tja125
Contextual Info: 2MBI50P-140 IGBT Modules IGBT Modules P series 1400V/50A 2 in one-package • Features • Small temperature dependence of the turn-off switching loss • Easy to connect in parallel • Wide RBSOA square up to 2 times of rated current and high shortcircuit withstand capability

ro1f

Abstract: 2mb175p-140 2mb175 2mb175p 2MBI75P-140 m232
Contextual Info: 2MBI75P-140 IGBT Modules IGBT Modules P series 1400V/75A 2 in one-package • Features • Small temperature dependence of the turn-off switching loss • Easy to connect in parallel •W ide RBSOA {square up to 2 times of rated current and high shortcircuit withstand capability

2mb1150pc

Abstract: 2MBI150PC-140 M233 2mbi
Contextual Info: 2MBI150PC-140 IGBT Modules IGBT ModlllGS P series 1400V / 150A 2 in one-package • Features • Small temperature dependence of the turn-off switching loss • Easy to connect in parallel •W ide RBSOA square up to 2 times of rated current and high shortcircuit withstand capability

Contextual Info: TOSHIBA 2N5550 Transistor Silicon NPN Epitaxial Type For General Purpose Switching and Amplifier Applications Features • High Collector Breakdown Voltage • v c b o = 160V, VCE0 = 140V • Low Leakage Current - Iqbo ~ 100nA Max. @ VQg = 100V • Low Saturation Voltage

Contextual Info: euoec BSM150GB170DN2 E3166 F IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • on,min = "10 Ohm Type BSM150GB170DN2 E3166 VbE h 1700V 220A Package Ordering Code

vqe 24 e

Abstract: vqe 24 d
Contextual Info: euoec F BSM 20 GD 60 DL IGBT Power Module Prelim inary data • 600V NPT Technology • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VbE h Package O rdering Code BSM 20 GD 60 DL

transistor TE 901 equivalent

Abstract: bd 743 transistor
Contextual Info: HGTP20N60B3 f f t H A R R IS U V S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBT Features 40A, 600V at T c = +25°C Square Switching SOA Capability Typical Fall Tim e - 140ns at +150°C Short Circuit Rated Low Conduction Loss Description The HGTP20N60B3 is a MOS gated high voltage switching