VQE 13 E Search Results

VQE 13

Abstract: 1N6641 1N6642 JANTX 1N6638 1N6639 1N6640 1N6642 1N6643 JAN1N6642 Qualification
Contextual Info: DEFENSE LOGISTICS AGENCY DEFENSE SUPPLY CENTER, COLUMBUS POST OFFICE BOX 3990 COLUMBUS, OH 43218-3990 IN REPLY REFER TO DSCC-VQ VQE-09-017180/Mr. Carpenter/614-692-7078/kc SUBJECT: Notification of Qualification, MIL-PRF-19500N, FSC 5961 January 13, 2009

switching TRANSISTOR mosfet 30V 40A

Abstract: IRGB440U
Contextual Info: International IlftRl Rectifier PD - 9.782A IRGB440U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency cun/e

vqe 14 E

Abstract: vqe 13 e vqe 13
Contextual Info: euoec F BSM 200 G AL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Chopper diode like diode of BSM300GA120DN2 • Package with insulated metal base plate Type VCE BSM 200 GAL 120 DN2 1200V 290A h Package Ordering Code HB 200GAL

Contextual Info: Provisional Data Sheet PD-9.1187 ^R ectifier IRGNIN050K06 "CHOPPER" IGBT INT-A-PAK Low conduction loss IGBT High Side Switch VCE = 600V - o 3 «nr 5 ° - • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses

IRGKI050U06

Contextual Info: I n t e r n a t io n a l S P M 96,B Rectifier IRGKI050U06 "CHOPPER" IGBTINT-A-PAK Ultra-fast Speed IGBT •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"

Contextual Info: euoec BSM150 GT 120 DN2 F IGBT Power Module • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE BSM 150 GT 120 DN2 1200V 200A h Package Ordering Code TRIPACK C67070-A2518-A67

Contextual Info: PD-9.969B kitemational [^ R ectifier IRGNI050U06 "CHOPPER" IGBT INT-A-PAK Ultra-fast Speed IGBT High Side Switch - • Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"

IRGKI115U06

Abstract: C779 LC115
Contextual Info: PD-9.963B bitem ational [^ R e c tifie r IRGKI115U06 "CHOPPER" IGBT INT-A-PAK Ultra-fast Speed IGBT VCE = 600V • Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"

transistor C946

Abstract: C948 c948 transistor C946 C947 c 948 BR c945 transistor diode c946 transistor c951 c947 transistor
Contextual Info: International tor]Rectifier P D - 9.1114 IRGPC40KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • • • • Ie Short circuit rated -1 Ops @ 125°C, V q E = 15V Switching-loss rating includes all "tail" losses

Contextual Info: euoec BSM 200 GB 120 DN2 F IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 200 GB 120 DN2 1200V 290A h Package Ordering Code HALF-BRIDGE 2 C67070-A2300-A70 Maximum Ratings Parameter

vqe 14 E

Contextual Info: euoec F BSM 200 GT 120 DN2 IGBT Power Module • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE BSM 200 GT 120 DN2 1200V 300A h Package Ordering Code TRIPACK C67070-A2519-A67

Contextual Info: PD -9.1689 International IGR Rectifier IRG4IBC20KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • High switching speed optimized for up to 25kHz With lOW V C E o n • Short Circuit Rating 10ps @ 125°C, Vge = 15V

transistor c655

Contextual Info: PD - 9.681 A bitemational EggRectifier IRGBC20U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all “tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

1PK transistor

Abstract: C275 1RGPH40F IRGPH40F C278 LC17A
Contextual Info: PD - 9.764 International I» ] Rectifier IRGPH40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail" losses » Optimized for medium operating frequency 1 to 10kHz S ee Fig. 1 for Current vs. Frequency curve

kf 202 transistor

Contextual Info: FF 100 R 06 KF 3 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte V qes Maximum rated values 600 V 100 A le Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0,140 °C/W 0,280 C/W DC, pro Zweig / per arm

Contextual Info: euoec BSM100 GT 120 DN2 F IGBT Power Module • Three single switches • Including fast free-wheeling diodes • Package with insulated metal base plate • Solderable Terminals Type VbE Package O rdering Code BSM 100 GT 120 DN2 1200V 150A TRIPACK C 67070-A2520-A67

vqe 13

Abstract: VQE14 vqe 14 E vqe 14 VQE11 VQE 12 vqe13 VQE 14 C Siebensegmentanzeige VQE 11
Contextual Info: FUNKAMATEUR-Bauelementeinformation VQE11/13 VQE12/14 Mehrstellige Lichtschachtbauelemente rotstrahlend, Ziffernhöhe 12,7 mm TG L 55110 V EB W erk für Fernsehelektronik Berlin Kurzcharakteristik Grenzwerte P aram eter B edingungen K urzzeichen m ax. D urch laß g leich stro m 1

c679 transistor

Abstract: G882 C679
Contextual Info: International [^R ectifier P D - 9.1075 IRGPC30K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, V ge = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

1RGP440U

Abstract: G0606 c606 igbt 500V 22A vqe 24 d IRGP440U VQE 11
Contextual Info: PD - 9.779A International ^R ectifier IRGP440U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

FZ 300 R 06 KL

Contextual Info: FZ 75 A 06 KL Elektrische Eigenschaften Electrical properties Therm ische Eigenschaften RthJC V qes M axim u m rated va lu e s 60 0 V V ECs 5 V 75 A 0 ,6 25 “ C /W 150 - 4 0 / + 150 - 4 0 / + 125 tv j max lc tv j op ts tg IcRM tp = 1 m s 150 A P tot tc 200

transistor 10 sS 125

Contextual Info: FF 300 R 06 KF 3 Transistor Transistor Elektrische Eigenschaften Electrical properties Therm ische Eigenschaften Therm al properties 0,045 Rtruc DC, pro Baustein / per module 0,090 DC, pro Zweig / per arm 0,030 RthCK pro Baustein / per module pro Z w e ig / per arm

Contextual Info: FF 300 R 12 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1200 V 300 A lc Thermische Eigenschaften Rthjc RthCK IC R M tp = 1 ms 600 A Pto t tc = 25°C 1800 W Thermal properties DC, pro Baustein/per module

Contextual Info: International ira] Rectifier Preliminary Data SheetPD - 9.760 IRGPH50S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency cun/e

Contextual Info: FZ 1200 R 12 KF 1 Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,016 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1200 V 1200 A 0,008 °C/W pro Baustein / per module