VQE 13 E Search Results

VQE 13

Abstract: 1N6641 1N6642 JANTX 1N6638 1N6639 1N6640 1N6642 1N6643 JAN1N6642 Qualification
Contextual Info: DEFENSE LOGISTICS AGENCY DEFENSE SUPPLY CENTER, COLUMBUS POST OFFICE BOX 3990 COLUMBUS, OH 43218-3990 IN REPLY REFER TO DSCC-VQ VQE-09-017180/Mr. Carpenter/614-692-7078/kc SUBJECT: Notification of Qualification, MIL-PRF-19500N, FSC 5961 January 13, 2009

switching TRANSISTOR mosfet 30V 40A

Abstract: IRGB440U
Contextual Info: International IlftRl Rectifier PD - 9.782A IRGB440U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency cun/e

vqe 14 E

Abstract: vqe 13 e vqe 13
Contextual Info: euoec F BSM 200 G AL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Chopper diode like diode of BSM300GA120DN2 • Package with insulated metal base plate Type VCE BSM 200 GAL 120 DN2 1200V 290A h Package Ordering Code HB 200GAL

Contextual Info: Provisional Data Sheet PD-9.1187 ^R ectifier IRGNIN050K06 "CHOPPER" IGBT INT-A-PAK Low conduction loss IGBT High Side Switch VCE = 600V - o 3 «nr 5 ° - • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses

IRGKI050U06

Contextual Info: I n t e r n a t io n a l S P M 96,B Rectifier IRGKI050U06 "CHOPPER" IGBTINT-A-PAK Ultra-fast Speed IGBT •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"

Contextual Info: euoec BSM150 GT 120 DN2 F IGBT Power Module • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE BSM 150 GT 120 DN2 1200V 200A h Package Ordering Code TRIPACK C67070-A2518-A67

IRGKI115U06

Abstract: C779 LC115
Contextual Info: PD-9.963B bitem ational [^ R e c tifie r IRGKI115U06 "CHOPPER" IGBT INT-A-PAK Ultra-fast Speed IGBT VCE = 600V • Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"

transistor C946

Abstract: C948 c948 transistor C946 C947 c 948 BR c945 transistor diode c946 transistor c951 c947 transistor
Contextual Info: International tor]Rectifier P D - 9.1114 IRGPC40KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • • • • Ie Short circuit rated -1 Ops @ 125°C, V q E = 15V Switching-loss rating includes all "tail" losses

Contextual Info: euoec BSM 200 GB 120 DN2 F IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 200 GB 120 DN2 1200V 290A h Package Ordering Code HALF-BRIDGE 2 C67070-A2300-A70 Maximum Ratings Parameter

vqe 14 E

Contextual Info: euoec F BSM 200 GT 120 DN2 IGBT Power Module • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE BSM 200 GT 120 DN2 1200V 300A h Package Ordering Code TRIPACK C67070-A2519-A67

Contextual Info: PD -9.1689 International IGR Rectifier IRG4IBC20KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • High switching speed optimized for up to 25kHz With lOW V C E o n • Short Circuit Rating 10ps @ 125°C, Vge = 15V

transistor c655

Contextual Info: PD - 9.681 A bitemational EggRectifier IRGBC20U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all “tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

PSS320

Contextual Info: SIEMENS BUP 410 IGBT • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 C E Type V'CE h Package Ordering Code BUP 410 600V 13A TO-220 AB C67040-A4424-A2 Maximum Ratings Parameter Symbol Collector-emitter voltage ^CE Collector-gate voltage ^CGR Rqe = 20 k£2

c679 transistor

Abstract: G882 C679
Contextual Info: International [^R ectifier P D - 9.1075 IRGPC30K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, V ge = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

transistor 10 sS 125

Contextual Info: FF 300 R 06 KF 3 Transistor Transistor Elektrische Eigenschaften Electrical properties Therm ische Eigenschaften Therm al properties 0,045 Rtruc DC, pro Baustein / per module 0,090 DC, pro Zweig / per arm 0,030 RthCK pro Baustein / per module pro Z w e ig / per arm

Contextual Info: FF 300 R 12 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1200 V 300 A lc Thermische Eigenschaften Rthjc RthCK IC R M tp = 1 ms 600 A Pto t tc = 25°C 1800 W Thermal properties DC, pro Baustein/per module

Contextual Info: International ira] Rectifier Preliminary Data SheetPD - 9.760 IRGPH50S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency cun/e

Contextual Info: FZ 1200 R 12 KF 1 Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,016 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1200 V 1200 A 0,008 °C/W pro Baustein / per module

transistor C632

Abstract: igbt 500V 15A c632 DIODE c630 diode IRGB430UD2 C632
Contextual Info: P D - 9.1067 bitemational [ïôr |Rectifier IRGB430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features V c es = 500V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes

Contextual Info: PD -9.1064 bitemational ior Rectifier IRGP440UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features V c e s = 500V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

930 18a

Abstract: IRGPH40MD2
Contextual Info: htemational S Rectifier Preliminary Data Sheet PD - 9.1118 IRGPH40MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V CES • Short circuit rated -10ps @125°C, V q E = 15V •Switching-loss rating includes all "tail" losses

Contextual Info: SIEMENS BCR 183W PNP Silicon Digital Transistor Type Marking O rdering Code Pin Configuration BCR 183W W Ms Q62702-C 2276 1= B Package 2 = E 3 = C SOT-323 M axim um Ratings Param eter Sym bol C ollector-em itter voltage ^CEO 50 C ollector-base voltage ^CBO

Contextual Info: PD-9.1145A kitemational kjr]Rectifier IRGPC50MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V c e s = 600V • Short circuit rated -10ps @125°C, VGE = 15V • Switching-loss rating includes ail "tail" losses

Contextual Info: SIEMENS BUP 300 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type BUP 300 VCE 1200V 3.6A C Pin 3 E Package Ordering Code TO-218AB Q67078-A4203-A2 Maximum Ratings