VQA 10 Search Results

VQA 23

Contextual Info: date 09/23/2013 page 1 of 7 SERIES: VQA │ DESCRIPTION: DC-DC CONVERTER FEATURES • • • • • • designed for IGBT driver modules small footprint 3,000 Vac isolation short circuit protection temperature range -40~105°C efficiency up to 80% input

A277D

Abstract: applikation heft A225D "halbleiterwerk frankfurt" VQA 13 VQA13 information applikation A302D Transistoren DDR halbleiterwerk
Contextual Info: J motkr^elel-ctsnonH-c Information Information - Applikation v : 1 . •' LEDAnsteuerungsscbaltkreis A 277 D * Eigenschaften und Einsatzmöcjlichkeiten - M ikroelektronik H eft 10 v e b h albleiterw erk fr a n k fu r t/ o d e r laitbetrieb im veb Kombinat mikraelektronik

5252 F 1006

Abstract: 40r6 NF 846 RFT service-mitteilungen "service-mitteilungen" vqe 21 RFT Servicemitteilungen servicemitteilungen service-mitteilungen 5252 f 1201
Contextual Info: SERVICE-MITTEILUNGEN 12-15 Iradio - television VEB RFT INDUSTRIEVERTRIEB RUNDFUNK UND F E R N S E H E N Ausgabe Seite S e p t. 88 1- 3 16 M itte ilu n g aus dem VEB S te r n -B a d io B e r l in , K u n d en d ien st Laufw erk MU 3oo S-DB - S e r v ic e v a r ia n te n

DZ800S17K3

Abstract: FF800R17KE3
Contextual Info: Technische Information / technical information DZ800S17K3 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Emitter Controlled³ Diode 62mm C-series module with Emitter Controlled³ diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data

Diode KD 514

Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Contextual Info: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381

UEI 20 SP 010

Abstract: Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D
Contextual Info: e l e k t r o m k - b a u e ì e m e n t e * W UKaÊÊi I Ä I L I I m V w •1 vît M •'4 n, ' I ill ■ DATEN BLATTSAMM LU NG elektronische bauelemente ?: V' I j| D A I Ï K B L A U S A MML ÜHG "E lektronische Bauelemente1' Ausgabe 1/89 14 : "Neue und weiterentwiekelte Bauelemente sowie ausgewählte Importbauelemente"

max4440

Contextual Info: APT10086BVFR A dvanced w Tæ p o w e r Te c h n o l o g y iooov i3a 0.8600 POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

LA6358

Abstract: LA6358NM 777T
Contextual Info: Ordering number: EN 3192 Monolithic Linear IC LA6358NM High-Performance Dual Operational Amplifier Overview The LA6358NM is an IC integrating two high-performance operational amplifiers in a single package. This operational amplifier contains an internal phase compensator and is designed to operate from a

Contextual Info: A dvanced APT8065BVFR pow er Te c h n o lo g y 800V POWER MOS V 13A 0.650Q FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

service-mitteilungen

Abstract: SAL 41 C-951 colortron Servicemitteilungen RFT Service Mitteilung Stassfurt Colortron Mitteilung VEB RFT SAY16 scans-048
Contextual Info: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N D F E R N S E H E N M M IR a d io - Television I OKTOBER 1984 A 9 SEITE 1-4 Mitteilung aus dem VEB Fernsehgerätewerke "Friedr.Engels" Staßfurt Farbbildröhren vom Werk für Fernsehelektronik Berlin

rema andante

Abstract: GER-A service-mitteilungen stern R 160 REMA VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN Stassfurt rema adagio 830 adagio rema adagio
Contextual Info: SERVICE-MITTEILUNGEN VEB IN DUSTRIEVERTRIEB RUNOFUNK UND FERNSEH EN r a d io -television CHROMAT 1060 Der VEB Fernsehgerätewerke Staßfurt wird, im Verlauf des 2. Halbjah­ res 1976 die ersten Farbfernsehgeräte vom neuen Typ "CHROMAT 1060" an den Handel ausliefera. Der "CHROMAT 1060" gilt offiziell als

754C

Abstract: L3036 2082c K/EL2082J
Contextual Info: EL2082/EL2082C P ta n frf iHIGHl PtfffpAMANfiE l H iAilAlOG i pINTEGRATE W QftClJITS P • Current-Mode Multiplier F ea tu r es G en eral D esc rip tio n • Flexible inputs and outputs, all ground referred • ISO M Hz large and small-signal bandwidth • 46 dB of calibrated gain control

TDB1080

Abstract: rms audio amplifier circuit diagram TDB1080T Limiting Amplifier fm detector phase detector 500 khz 5PQA audio signal detector circuit 100 audio amplifier circuit diagram Long-Tailed
Contextual Info: TDB1080 TDB1080T I.F. LIMITING AMPLIFIER, FM DETECTOR AND AUDIO AMPLIFIER G E N E R A L DESCRIPTIO N The TDB1080 is a bipolar integrated circuit comprising a limiting amplifier, a balanced FM detector and a class-B audio amplifier. It is intended for frequencies up to 500 kHz with either narrow-band or

Contextual Info: Tem ic Cell Based CB8 0.8|im CMOS Cell-Based Designs MATRA MHS Description MHS calibrated COMPASS Cell Based tools and libraries • the density and the speed are close to those of a full on CMOS 0.8 xm, bringing an additional option to its custom, while keeping a design cycle close to the

2N7007

Contextual Info: SILICONIX INC Ô2SM73S QGmGST 1 1ÛE D fX S ilic o n ix 2N7007 incorporated -T -U l-U ä N-Channel Enhancem ent-M ode M OS Transistor TO -92 PRODUCT SUMMARY V BR DSS (V) fDS(ON) (ii) >d (A) PACKAGE 240 45 0.065 TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VNDN24 (See Section 7)

A209K

Abstract: 1pm05 tda 7812 KA213A KP303D B342D sft353 GL 7812 u 711 service-mitteilungen
Contextual Info: SERVICE-MITTEILUNGEN VEB IN D US TR IEV E R TR IE B R U N D F U N K U N D FERNSEHEN jf jl f j= = Ì 3 I ra d io - television AUSGABE: 1985 3 S e ite 1 - 4 Ü b e r s i c h t über d ie w ic h tig s te n H a lb le ite r Stand* A p ril 1985 Die in den S e rv ic e -M itte ilu n g e n N r. 3 /8 2 v e r ö f f e n t l ic h t e Über­

BRY20

Abstract: SIEMENS THYRISTOR SIEMENS THYRISTOR BRY 20 Q60217-Y20 200 hn PNPN SIEMENS FAST THYRISTOR
Contextual Info: 55C D • fl23SbaS Q0047b3Jj M S I E 6 ' ! PNPN Thyristor Tetrode 25C 04763 D 1 _ BRY20 If '_ SIEMENS AKTIENGESELLSCHAF BRY 20 is an extinguishable PNPN silicon planar thyristortetrode in TO 12 case 5 C 4 DIN 41873 . The anode gate (Ga) is electrically connected to the case. The BRY 20 is particularly

AL970

Contextual Info: SIEMENS CMPNTS-, OPTO 44E D • SIEM EN S 023b32b 0005110 4 M S I E X LD 271/271H 1" LEADS LD 271L/271 LH INFRARED EMITTER Package Dimensions in Inches mm .024(0.6) .189(4.9) .165(42) ¿*(1.0) I a .to .0» •071 (U> ^ .047 ( U ) ^ _± .028 (0.7)' (1.0)

3D24N2Y

Abstract: transistor sc 238 9008 transistor transistor sc 308 SAL 41 transistor 9013 1008 transistor X2C70 transistor D 1002 3D24N
Contextual Info: SERVICE-MITTEILUNGEN VEB INDUSTRIEVERTRIEB R U N O F U N K U N D FE R N SE H E N AUSGABE: M m ri r a d i o - t e i e v i s i o n l 1 9 8 4 14-16 S e ite 1 - 1 2 Mitteilung aus dem VSB RFT Industrievertrieb R.u.F. Leipzig Serviceinformationen zuin neuen Auto-Stereo-Kassettenabspielgerät

SIEMENS THYRISTOR BRY 20

Abstract: 7809A SIEMENS thyristor BRY 300 BRY20 SIEMENS FAST THYRISTOR
Contextual Info: 55C D • fl23SbaS Q0047b3Jj M S I E 6 ' ! PNPN Thyristor Tetrode 25C 04763 D 1 _ BRY20 If '_ SIEMENS AKTIENGESELLSCHAF BRY 20 is an extinguishable PNPN silicon planar thyristortetrode in TO 12 case 5 C 4 DIN 41873 . The anode gate (Ga ) is electrically connected to the case. The BRY 20 is particularly

VEB mikroelektronik

Abstract: "Mikroelektronik" Heft GWS servo VEB Kombinat zf filter lm 7803 3V Positive Voltage Regulator E355D "halbleiterwerk frankfurt" mikroelektronik Heft U706D VQB71
Contextual Info: H albleiter-B auelem ente Semiconductors D ie vorliegend e Übersicht en th ält in g ed rä n g te r Form d ie wichtigsten G renz- und Kenn­ d aten d e r in d er D D R g efertigten H a lb le ite rb au e le m e n te . Dem A n w en der soll durch diese Übersicht die Auswahl der jew eils in Frage kom menden

Contextual Info: A dvanced APT5020BVFR pow er Te c h n o lo g y 500V POWER MOS V 26A 0.200Í2 FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: A dvanced PO W ER Te c h n o lo g y APT10050LVFR iooov 21 a o.sooq POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 NDP605A/NDP605B, NDP606A/NDP606B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect