VQ 123 Search Results

transistor VN46AFD

Abstract: VN46AFD TO220SD
Contextual Info: VN46AFD N-Channef Enhancement-Mode M O S Transistor B W SgA PRODUCT SUMMARY V BR|DSS 'i r 40 3 Id (A FRONT VIEW TO-220SD o 1.46 Performance Curves: VNDQ06 1 SOURCE 2 GATE 3 & TAB - DRAIN 123 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted) SYM BOL

z80-sio

Abstract: SPF8 Z80SIO application zilog z80ctc
Contextual Info: <5 '0'4#.274215' +06')4#6'& /+%41241%'5514 24'.+/+0#4; 241&7%6 52'%+ +%#6+10 25</2 <K.1) 9IRF8WC89 *958QU5RT9RS  ' *5GCFTIH #V9HU9 %5GP69FF %#  69F9PBIH9  (5X  +HT9RH9T BTTPWWW<C.1)7IG 24'.+/+0#4;

12n120

Abstract: TO247AE
Contextual Info: MOTOROLA Order this document by MGW12N 120/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet Insulated G ate Bipolar TVansistor MGW 12N120 N-Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage

i232

Abstract: 2N7336 436D IRFG6110 IGD 001
Contextual Info: Data Sheet No. PD-9.436D INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFG6110 SN7336 JA NTX2N7336 JANTXV2N7336 COMBINATION N AND P CHANNEL [2 EACH] POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE [REF: MIL-S-19500/598] 100 Volt, 0.7 Ohm (N-Channel) and

BMA16X16

Contextual Info: SI GE C P L E S S E Y MARCH 1997 S E M I C O N D U C T O R S CLA80000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION ARRAY SIZES The CLA80k gate array series from GEC Plessey Semiconductors offers advantages in speed and density over previous array series. Improvements in design combined with

st smd marking code VU

Abstract: SMD TRANSISTOR MARKING 3B SMD HF transistor AEB01100 AED01098 AED010B7 AEP01099 AET01085 TLE4263G MARKING CODE SMD IC
Contextual Info: 823Sb05 DMfaSBB 115 SIEMENS 5-V Low -D rop V o ltage R eg u lato r TL E 4263 G P relim inary Data Bipolar 1C Features • • • • • • • • • • Output voltage tolerance < ± 2 % Low-drop voltage Very low standby current consumption Overtemperature protection

equivalent for transistor tt 2206

Abstract: equivalent transistor TT 2206 TL032C
Contextual Info: TL032, TL032A ENHANCED JFET LOW-POWER LOW-OFFSET DUAL OPERATIONAL AMPLIFIERS D3152, JULY 1988 - REVISED JANUARY 1991 Maximum Offset Voltage . . . 800 jxV Very Low Power Consumptlon . . . 13 mW Typ High Slew Rate . . . 2.9 V/jis Typ Output Short-Circult Protection

2N7335

Abstract: IRFG110 IRFG9110 JANTX2N7335 JANTXV2N7335
Contextual Info: Data Sheet No. PD-9.397E INTERNATIONAL RECTIFIER IÖ R IRFG9110 2N7335 JANTXSN7335 JANTXVSN7335 HEXFET TRANSISTORS 4P CHANNEL POWER MDBFETs 14 L E A D D U A L -IN -L IN E Q U A D C E R A M IC S ID E B R A Z E D PAC KAG E [REF: MIL-S-19500/599] Product Summary

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BGY887B CATV amplifier module Product specification Supersedes data of February 1995 File under Discrete Semiconductors, SC16 1997 Apr 15 Philips Semiconductors Product specification CATV amplifier module BGY887B PINNING - SOT115J

Contextual Info: CHA2001 6.4 • 8 . 6 G H z LOW N O I S E , GA I N C O N T R O L A M P L I F I E R G a A s M O N O L I T H I C M I C R O W A V E IC FEATURES ■ 3.3dB noise figure ■ 20dB gain ■ 24dB dynamic gain control ■ Good input and output matching Available in chip form : CHA2001-99A/00

Contextual Info: ANALOG DEVICES Quad Low-Offset Low-Power Operational Amplifier □ 1.0 0P-400 SCOPE This specification covers the detail requirements for a monolithic quad operational amplifier. It is highly recommended that this data sheet be used as a baseline for new military or

HFCN-4600

Contextual Info: Ceramic High Pass Filter Ÿ HFCN-4600+  WR  0+] Features Maximum Ratings R& WR R& 2SHUDWLQJ 7HPSHUDWXUH R 6WRUDJH 7HPSHUDWXUH R  & WR  & 5 3RZHU ,QSXW : PD[ DW ž& 3DVVEDQG UDWLQJ GHUDWH OLQHDUO\ WR : DW ƒ& DPELHQW 3HUPDQHQW GDPDJH PD\ RFFXU LI DQ\ RI WKHVH OLPLWV DUH H[FHHGHG

TBE4335A

Abstract: 4335A TBC4332A 4332A 433-2 npn TBE 4335A tbc4332 4335 op amp differential tbe4335
Contextual Info: M EM im S TBC 4332A TBE 4335A Quad Operational Amplifier with Darlington Input Bipolar 1C Features • • • • • • • • • • High input im pedance Wide com m on-m ode range Large supply voltage range Large control range High output current W ide temperature range TBC 4332 A

D3964

Abstract: TLE2144I
Contextual Info: TLE2144, TLE2144A,TLE2144Y EXCALIBUR LOW-NOISE HIGH-SPEED PRECISION QUAD OPERATIONAL AMPLIFIERS D3964, N O VEM BER 1991 a v a ila b le fe a t u r e s Low Noise: 10 Hz 1 kHz Low Vio . . . 1.5 mV Max at 25°C 15 nV/Vflz 10.5 nV/VHz Single or Split Supply . . . 4 V to 44 V

BGY685

Abstract: BP317 DIN45004B SC16
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BGY685 CATV amplifier module Product specification Supersedes data of February 1995 File under Discrete Semiconductors, SC16 1997 Apr 14 Philips Semiconductors Product specification CATV amplifier module FEATURES • Excellent linearity

BGY685A

Abstract: BP317 SC16
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGY685A CATV amplifier module Product specification Supersedes data of 1997 Apr 21 File under Discrete Semiconductors, SC16 1998 Mar 16 Philips Semiconductors Product specification CATV amplifier module

MOTOROLA 3055V

Abstract: 3055VL 3055V
Contextual Info: MOTOROLA Order this document by MTD3055VL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTD3055VL TMOS V Power Field Effect Transistor DPAK for Surface Mount Motorola Preferred Device TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.18 OHM N-Channel Enhancement-Mode Silicon Gate

CSB503E

Contextual Info: T O SH IB A TA1230Z TO SH IBA BIPO LAR LINEAR INTEGRATED CIRCUIT SILICON M ONOLITHIC TA 1230Z TV SOUND MULTIPLEX BROADCAST DEMODULATOR IC FOR EIAJ SYSTEM The TA1230Z incorporates the functions required for EIAJ system TV sound m ultiplex broadcast dem odulation and a

Contextual Info: PRELIMINARY DEVICE SPECIFICATION JX M C C S2046/S2047 G IG A B IT ETH ER N ET C HIPSET FEATURES • Functionally compliant with the proposed 802.3z Specification • S2046 transmitter incorporates phase-locked loop PLL providing clock synthesis from lowspeed reference

varistor 110v

Abstract: V111HA32 V111HA40 V131HA32 V131HA40 V141HA32 V141HA40 V151HA32 V661
Contextual Info: Varistor Products Industrial High Energy Terminal Varistors > HA Series RoHS HA Varistor Series Description HA Series transient surge suppressors are industrial high energy Metal-Oxide Varistors MOVs . They are designed to provide secondary surge protection in the outdoor

4614 SMD

Abstract: IC SMD 4614
Contextual Info: T e m ic S594TRW Semiconductors MOSMIC for TV-Tùner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. ^ Observe precautions for handling. M Applications Low noise gain controlled input stages in UHF- anc

wv4 sot-23

Abstract: sot-23 wv4 wv4 surface mount wv4 5 sot-23 bjt ce amplifier application LA 7625 RF2314 F2314 WV4 SOT23 WV4 sot
Contextual Info: RFM RF2314 Preliminary M ICRO-DEVICES G E N E R A L PU RPO SE LOW N O IS E A M P L IF IE R T y p ic a l A p p lic a t io n s • Broadband Gain Blocks • Driver Stage for Power Amplifiers • Final PA for Low-Power Applications • Oscillator Loop Amplifiers

IRGNI140U06

Contextual Info: International Ili»«]Rectifier PM972B IRGNI140U06 "CHOPPER" IGBT INT-A-PAK Ultra-fast Speed IGBT High Side Switch ;- ° 3 V CE = 6 0 0 V •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 10OKHz resonant

JESD22-A-101

Abstract: MS-013 TIA-968-A MARKING b3 6AT1
Contextual Info: SIDACtor Protection Thyristors SLIC Protection Battrax® Single Port Positive/Negative - MS-013 Description Battrax® Single Port Pos/Neg The Single Port Positive/Negative Battrax Series are programmable SIDACtor® devices designed to protect SLICs Subscriber Line Interface Circuit from damaging