VPS05605 Search Results

RF NPN POWER TRANSISTOR 3 GHZ

Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ RF TRANSISTOR 2.5 GHZ s parameter Germanium Power Diodes GERMANIUM TRANSISTOR RF NPN POWER TRANSISTOR 2.5 GHZ germanium transistors NPN BFP740 BGA420 E6327
Contextual Info: BFP740 3 NPN Silicon Germanium RF Transistor 4 • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 up to 10 GHz and more 1 • Ideal for CDMA and WLAN applications VPS05605 • Outstanding noise figure F = 0.5 dB at 1.8 GHz

BAS28W

Abstract: marking JTs
Contextual Info: BAS28W Silicon Switching Diode Array 3 • For high-speed switching applications 4 • Electrical insulated diodes 4 2 3 Di1 1 Di2 1 VPS05605 2 EHA07289 Type Marking BAS28W JTs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT343 Maximum Ratings Parameter

BFP-540

Abstract: VPS05605 transistor BO 540 Transistor MJE 540
Contextual Info: SIEGET
45 BFP 540 NPN Silicon RF Transistor Preliminary data 3
For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB
Gold metallization for high reliability 2
SIEGET
45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!

VPS05605

Contextual Info: SIEGET
45 BFP 540 NPN Silicon RF Transistor Preliminary data 3
For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB
Gold metallization for high reliability 2
SIEGET
45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BAT 68-07W Silicon Schottky Diodes 3 • For mixer applications in the VHF / UHF range 4 • For high-speed switching applications 2 1 VPS05605 4 1 3 2 EHA07008 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT 68-07W

70-07W

Abstract: marking 77s
Contextual Info: BAS 70-07W Silicon Schottky Diode 3
General-purpose diode for high-speed switching 4
Circuit protection
Voltage clamping
High-level detecting and mixing 2 1 VPS05605 4 1 3 2 EHA07008 ESD: Electrostatic discharge sensitive device, observe handling precaution!

MA1022

Contextual Info: BF 2030W Silicon N-Channel MOSFET Tetrode Preliminary data 3
For low noise, high gain controlled 4 input stages up to 1GHz
Operating voltage 5V Drain AGC HF Input G2 G1 R G1 2 HF Output + DC 1 VPS05605 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BCR410W

Abstract: AUG-03-2001 VPS05605
Contextual Info: BCR410W Active Bias Controller Preliminary data 3 Characteristics 4
Supplies stable bias current from 1.8V operating voltage on
Low voltage drop: 2 110mV for 10mA collector currrent Application notes 1 VPS05605
Stabilizing bias current of NPN transistors and

BF998W

Abstract: 998 transistor bf998 102001 transistor BF 998
Contextual Info: BF998W Silicon N-Channel MOSFET Tetrode 3
Short-channel transistor 4 with high S/C quality factor
For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

BCR410W

Contextual Info: BCR410W Active Bias Controller 3 Characteristics 4
Supplies stable bias current from 1.8V operating voltage on
Low voltage drop: 110mV for 10mA collector currrent 2 Application notes 1 VPS05605
Stabilizing bias current of NPN transistors and S e n s e

BFP193W

Contextual Info: BFP193W NPN Silicon RF Transistor 3
For low noise, high-gain amplifiers up to 2 GHz 4
For linear broadband amplifiers
fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

A1270

Abstract: transistor A1270 A1270 transistor datasheet 81W MARKING CODE a1270* transistor Q62702-A1270 marking 81W
Contextual Info: BAR 81W Silicon RF Switching Diode Preliminary data 3 • Design for use in shunt configuration 4 • High shunt signal isolation • Low shunt insertion loss 2 1 VPS05605 Type Marking Ordering Code Pin Configuration BAR 81W BBs 1 = A1 2 = C2 3 = A2 4 = C1 SOT-343

Q62702-A3470

Contextual Info: BAT 64-07W Silicon Schottky Diodes 3 • For low-loss, fast-recovery, meter protection, 4 bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!

IC 7481 pin configuration

Abstract: BFP520 application notes
Contextual Info: SIEGET
45 BFP520 NPN Silicon RF Transistor 3
For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB
For oscillators up to 15 GHz 2
Transition frequency fT = 45 GHz 1 VPS05605
Gold metallization for high reliability

BFP182W

Contextual Info: BFP182W NPN Silicon RF Transistor 3
For low noise, high-gain broadband amplifiers at 4 collector currents from 1 mA to 20 mA
fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

Infineon Technologies transistor 4 ghz

Contextual Info: SIEGET
25 BFP 405 NPN Silicon RF Transistor 3  For low current applications  For oscillators up to 12 GHz  Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding Gms = 23 dB at 1.8 GHz  Transition frequency fT = 25 GHz  Gold metallization for high reliability

Q62702-G0057

Abstract: BGA 64 PACKAGE thermal resistance
Contextual Info: BGA 420 Si-MMIC-Amplifier in SIEGET 25-Technologie Preliminary data 3 • Cascadable 50 Ω-gain block 4 • Unconditionally stable • Gain |S21 |2 = 13 dB at 1.8 GHz IP3out = +9 dBm at 1.8 GHz 2 VD = 3 V, ID = typ. 6.4 mA • Noise figure NF = 2.2 dB at 1.8 GHz

420 NPN Silicon RF Transistor

Abstract: transistor 1346 Q62702-F1591 BFP420 VPS05605 RNF50 TP66 zs transistor transistor fc 1013 Semiconductor 1346 transistor
Contextual Info: SIEGET 25 BFP 420 NPN Silicon RF Transistor 3 • For high gain low noise amplifiers 4 • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f T = 25 GHz 2 • Gold metalization for high reliability

INFINEON marking BGA

Abstract: 420 transistor
Contextual Info: BGA 420 Si-MMIC-Amplifier in SIEGET 25-Technologie 3
Cascadable 50 -gain block 4
Unconditionally stable
Gain |S21 |2 = 13 dB at 1.8 GHz IP3out = +9 dBm at 1.8 GHz 2 VD = 3 V, ID = typ. 6.4 mA
Noise figure NF = 2.2 dB at 1.8 GHz 1
Reverse isolation > 28 dB and

transistor marking BMs

Abstract: nf 948 95M-A
Contextual Info: BGA 427 Si-MMIC-Amplifier in SIEGET 25-Technologie 3 Preliminary data
Cascadable 50 -gain block 4
Unconditionally stable
Gain |S21 |2 = 18.5 dB at 1.8 GHz Appl.1 gain |S21 |2 = 22 dB at 1.8 GHz (Appl.2) 2 IP3out = +7 dBm at 1.8 GHz (VD =3V, ID=9.4mA)

BGA622

Abstract: GPS05605
Contextual Info: Data Sheet, Aug. 2005 BGA 622 Silicon Germanium W id e Ba n d L o w N o i s e A m p l i f ie r Silico n Discre te s N e v e r s t o p t h i n k i n g . Edition 2005-08-29 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany

BGA420

Abstract: E6327
Contextual Info: BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie 3
Cascadable 50 -gain block 4
Unconditionally stable
Gain |S21|2 = 13 dB at 1.8 GHz IP3out = +13 dBm at 1.8 GHz 2 VD = 3 V, ID = typ. 6.7 mA
Noise figure NF = 2.3 dB at 1.8 GHz 1
Reverse isolation > 28 dB and

BGA420

Contextual Info: BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie 3
Cascadable 50 -gain block 4
Unconditionally stable
Gain |S21 |2 = 13 dB at 1.8 GHz IP3out = +9 dBm at 1.8 GHz 2 VD = 3 V, ID = typ. 6.4 mA
Noise figure NF = 2.2 dB at 1.8 GHz 1
Reverse isolation > 28 dB and

ACS 086

Abstract: germanium transistor ac 128 acs sot-343 4ghz s parameters transistor s parameters 4ghz fa 5571 TRANSISTOR NPN 5GHz SOT 343 MARKING BF transistor k 620 silicon rf transistor s parameters up to 4ghz
Contextual Info: BFP 620 NPN Silicon Germanium RF Transistor Preliminary data 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz