VPC3 S Search Results

vpc3

Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs

vpc3 c

Abstract: RF transistor gain 20dB vpc3
Contextual Info: SZM-3066Z SZM-3066Z 3.3GHz to 3.8GHz 2W Power Amplifier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This

SZA-5044 APPLICATION NOTE

Abstract: SZA-5044 recommended land pattern for 0402 cap EDS-103585 10358 SZA-5044Z
Contextual Info: SZA-5044 Z SZA-5044(Z) 4.9GHz to 5.9GHz 5V Power Amplifier 4.9GHz to 5.9GHz 5V POWER AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-5044 is a high efficiency class AB Heterojunction Bipolar Transistor

Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs

Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZA-5044 is a high efficiency class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.

SZA-5044

Abstract: ON 4959
Contextual Info: SZA-5044 SZA-5044Z Product Description Sirenza Microdevices’ SZA-5044 is a high efficiency class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and

3.5GHz BJT

Abstract: cpe wimax
Contextual Info: SZM-3166Z SZM-3166Z 3.3GHz to 3.6GHz 2W Power Amplifier 3.3GHz to 3.6GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT

Contextual Info: Preliminary Product Description Sirenza Microdevices’ STA-6033 is a high efficiency class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.

SZM-3166Z

Abstract: 10dBm VPC3 C
Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs

Contextual Info: STA-6033 Z STA-6033(Z) 4.9GHz to 5.9GHz 3.3V Power Amplifier 4.9GHz to 5.9GHz 3.3V POWER AMPLIFIER Package: QFN, 16 pin, 3mmx3mm Product Description Features RFMD’s STA-6033 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier

s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ

Abstract: LX5506 STA-6033 STA-6033Z transistor on 4959 vpc3 c
Contextual Info: STA-6033 STA-6033Z Product Description Sirenza Microdevices’ STA-6033 is a high efficiency class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated

5-35GHz

Abstract: transistor on 4959
Contextual Info: STA-6033 STA-6033Z Product Description Sirenza Microdevices’ STA-6033 is a high efficiency class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated

SZA-5044ZSR

Abstract: SZA5044Z
Contextual Info: SZA-5044 Z SZA-5044(Z) 4.9GHz to 5.9GHz 5V Power Amplifier 4.9GHz to 5.9GHz 5V POWER AMPLIFIER Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-5044 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT

Contextual Info: SZM-3166Z SZM-3166Z 3.3GHz to 3.6GHz 2W Power Amplifier 3.3GHz to 3.6GHz 2W POWER AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier

M65611SP

Contextual Info: MITSUBISHI ICs AV COMMON M65611SP A D A P T IV E Y /C S E P A R A T IO N F IL T E R DESCRIPTION The M65611SP is a semiconductor integrated circuit, which PIN CONFIGURATION (TOP VIEW) uses 2H line memory to perform adaptive Y/C separation to image signals of NTSC system.

Contextual Info: SZA-5044 Z SZA-5044(Z) 4.9GHz to 5.9GHz 5V Power Amplifier 4.9GHz to 5.9GHz 5V POWER AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-5044 is a high efficiency class AB Heterojunction Bipolar Transistor

JESD 95-1, SPP-012

Abstract: vpc3 c RFSP5021
Contextual Info: Advanced RFSP5021 5.15-5.85 GHz U-NII Power Amplifier Product Description Applications The RFSP5021 power amplifier is a highperformance GaAs HBT IC designed for use in transmit applications in the 5.15-5.85 GHz frequency band. With a P1dB of 25 dBm, the device is ideal as a final stage for wireless LAN

SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR AMP

Abstract: SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR SZM-2066Z vpc3 s 2.4 ghz transistor wifi amplifier wifi 2.4 ghz wifi 2.4 ghz pcb layout SZM-2066 vpc3 c wifi 2.4ghz DETECTOR CIRCUIT DIAGRAM
Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs

dk 57

Abstract: STA-6033 STA-6033Z VPC3 C
Contextual Info: STA-6033 Z STA-6033(Z) 4.9GHz to 5.9GHz 3.3V Power Amplifier 4.9GHz to 5.9GHz 3.3V POWER AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: QFN, 16 pin, 3mmx3mm Product Description Features RFMD’s STA-6033 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier

marking 535 RF

Abstract: 64QAM 5044z
Contextual Info: SZA-5044 / SZA-5044Z Product Description 4.9 – 5.9 GHz 5V Power Amplifier Sirenza Microdevices’ SZA-5044 is a high efficiency class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and

vpc3 s

Contextual Info: SZA-5044 SZA-5044Z Product Description Sirenza Microdevices’ SZA-5044 is a high efficiency class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and

vpc3 b

Abstract: SZM-3166Z SZM3166
Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs

rf-detect

Contextual Info: STA-6033 Z STA-6033(Z) 4.9GHz to 5.9GHz 3.3V Power Amplifier 4.9GHz to 5.9GHz 3.3V POWER AMPLIFIER Package: QFN, 16 pin, 3mmx3mm Product Description Features RFMD’s STA-6033 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier

Contextual Info: STA-6033 Z STA-6033(Z) 4.9GHz to 5.9GHz 3.3V Power Amplifier 4.9GHz to 5.9GHz 3.3V POWER AMPLIFIER Package: QFN, 16 pin, 3mmx3mm Product Description Features RFMD’s STA-6033 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier