VPC3 B Search Results

Contextual Info: SZM-3066Z SZM-3066Z 3.3GHz to 3.8GHz 2 W Power Amplifier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This

Contextual Info: SZM-3066Z SZM-3066Z 3.3GHz to 3.8GHz 2W Power Amplifier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER RoHS Compliant and Pb-Free Product Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This

vpc3-c

Abstract: vpc3 c SZM-3066Z c2a marking recommended land pattern for 0402 cap
Contextual Info: SZM-3066Z SZM-3066Z 3.3GHz to 3.8GHz 2W Power Amplifier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This

VPC3 C

Abstract: vpc3
Contextual Info: SZM-3066Z SZM-3066Z 3.3GHz to 3.8GHz 2W Power Amplifier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This

vpc3 c

Abstract: vpc3-c MCH182C SZM-3066Z vpc3 s
Contextual Info: SZM-3066Z SZM-3066Z 3.3GHz to 3.8GHz 2 W Power Amplifier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This

vpc3

Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs

vpc3 c

Abstract: RF transistor gain 20dB vpc3
Contextual Info: SZM-3066Z SZM-3066Z 3.3GHz to 3.8GHz 2W Power Amplifier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This

vpc3 s

Abstract: SZA-5044Z vpc3 c 5044z 10358 OFDM SZA5044 SZA-5044 54Mb SIRENZA SZA-5044Z
Contextual Info: SZA-5044 SZA-5044Z Product Description Sirenza Microdevices’ SZA-5044 is a high efficiency class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and

SZA-5044 APPLICATION NOTE

Abstract: SZA-5044 recommended land pattern for 0402 cap EDS-103585 10358 SZA-5044Z
Contextual Info: SZA-5044 Z SZA-5044(Z) 4.9GHz to 5.9GHz 5V Power Amplifier 4.9GHz to 5.9GHz 5V POWER AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-5044 is a high efficiency class AB Heterojunction Bipolar Transistor

STA-6033Z

Abstract: LX5506 STA-6033 transistor on 4959 vpc3 c 47K100
Contextual Info: STA-6033 STA-6033Z Product Description Sirenza Microdevices’ STA-6033 is a high efficiency class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated

vpc3 s

Abstract: transistor on 4959 OFDM VPC3 C ofdm circuitry SZA5044 SZA-5044 SZA-5044Z sza5044z ON 4959
Contextual Info: SZA-5044 SZA-5044Z Product Description Sirenza Microdevices’ SZA-5044 is a high efficiency class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and

transistor on 4959

Contextual Info: Preliminary Product Description Sirenza Microdevices’ STA-6033 is a high efficiency class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.

Power AMP P1dB 35dBm

Contextual Info: ADVANCED INFORMATION Product Description Sirenza Microdevices’ SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs

Contextual Info: Preliminary Product Description Sirenza Microdevices’ STA-6033 is a high efficiency class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.

AN-064

Abstract: STA-6033 LX5506 vpc3 b
Contextual Info: Preliminary Product Description Sirenza Microdevices’ STA-6033 is a high efficiency class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.

Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs

Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZA-5044 is a high efficiency class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.

SZA-5044

Abstract: ON 4959
Contextual Info: SZA-5044 SZA-5044Z Product Description Sirenza Microdevices’ SZA-5044 is a high efficiency class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and

VPC3 C

Abstract: RFSP5021 ofdm amplifier
Contextual Info: Advanced RFSP5021 5.15-5.85 GHz U-NII Power Amplifier Product Description Applications The RFSP5021 power amplifier is a highperformance GaAs HBT IC designed for use in transmit applications in the 5.15-5.85 GHz frequency band. With a P1dB of 25 dBm, the device is ideal as a final stage for wireless LAN

vpc3 b

Abstract: ofdm amplifier vpc3 c RFSP5022
Contextual Info: Advanced RFSP5022 5.15-5.85 GHz U-NII Power Amplifier Product Description Applications • • • The RFSP5022 power amplifier is a highperformance GaAs HBT IC designed for use in transmit applications in the 5.15-5.85 GHz frequency band. With a P1dB of 25 dBm, the

vpc3 c

Abstract: ofdm amplifier OFDM RFSP5034
Contextual Info: Advanced RFSP5034 5.15-5.85 GHz U-NII Power Amplifier Product Description Applications The RFSP5034 power amplifier is a highperformance GaAs HBT IC designed for use in transmit applications in the 5.15-5.85 GHz frequency band. With a P1dB of 26.5 dBm, the

3.5GHz BJT

Abstract: cpe wimax
Contextual Info: SZM-3166Z SZM-3166Z 3.3GHz to 3.6GHz 2W Power Amplifier 3.3GHz to 3.6GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT

Contextual Info: Preliminary Product Description Sirenza Microdevices’ STA-6033 is a high efficiency class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.

Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs