VP15 Search Results

Contextual Info: VP1509 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► ► The Supertex VP1509 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

VP1504

Abstract: VP1506NW VP1509NW
Contextual Info: VP1504/VP1506/VP1509 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package -40V 8.0Ω -0.5A VP1504NW -60V 8.0Ω -0.5A VP1506NW -90V 8.0Ω -0.5A VP1509NW Die† † MIL visual screening available.

VP1550

Abstract: VP1550NW
Contextual Info: VP1550 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package -500V 125Ω -100mA VP1550NW Die* * Die in wafer form. Features Advanced DMOS Technology ❏ Free from secondary breakdown

variable phase shifter

Abstract: VP151C-36N1
Contextual Info: Surface Mount Voltage Variable Phase Shifter 150 MHz, 10% Bandwidth Package Style 36 VP151C-36N1 Key Features • • • Low Loss – 0.6 dB Phase Shift - 150° Solder Reflow to +240°C Guaranteed Specifications Insertion Loss dB TYP 0.6 MAX 1.0 Phase Shift (deg)

VP1506

Abstract: VP1506NW VP1509 VP1509NW
Contextual Info: VP1506 VP1509 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package -60V 8.0Ω -0.5A VP1506NW -90V 8.0Ω -0.5A VP1509NW Die† † MIL visual screening available. Features Advanced DMOS Technology

cuzn

Contextual Info: 0383 Schutzkappe für Stecker, IP 68 031., 033., 0365, SFV, SGR, SGV, SV, WSV 0383: mit Kette 0381 C 03 VP15: ohne Kette 1. Werkstoffe Kappe Dichtung Kette Protecting cap for plugs, IP 68 031., 033., 0365, SFV, SGR, SGV, SV, WSV 0383: with chain 0381 C 03 VP15: without chain

VP15R

Abstract: VPA13 VHF FRONT END VPA15
Contextual Info: RF Front End System Unit Type : VP13R / VPA13 NTSC VP15R / VPA15 (PAL) Part No : ENG_ _ _ _ _ _ Features Conforms to industry standard mounting specifications NTSC / PAL same shape and high performance are achieved The miniaturization of 2/3 compared with our company is

Contextual Info: •V L S I TECHNOLOGY INC LOE D • *1368347 0010245 1T1 « V H -T“- 7S -, I- Z 9 V L S I lECHNOLOGy INC. VP15301 SSTX FEATURES Monolithic SONET Section Terminating Transceiver for processing the section overhead of a receive and transmit SONET STS-1, STS-3, STS-9, or STS-12 data stream.

Contextual Info: V^L S I TECHNOLOGY INC bDE V L S I T e c h n o lo g y in c. D • T3flfl347 000R5S3 flSfl * V T I -t~ is -p VP15323TSPP TRIPLE SONET STS PAYLOAD PROCESSOR DESIGNER'S GUIDE August 1992 V L S I TECHNOLOGY INC bDE ]> ■ ^360347 G G G C] 2 2 4 7=14 ■ VTI Ü P V L S I T e c h n o l o g y , in c .

NT211AFH

Abstract: battery test circuit diagram 263G
Contextual Info: Data Sheet Model No.:VP155 Document Number: SDS9902 Specifications Revision:1 Page 1 of 3 : Model No Battery Type For use with Color Battery Nominal Voltage Cut Off Voltage Capacity Continuous Operation Time* Temperature Range : : : : : : : : : : Casing Material

NT211AFH

Abstract: SDS9904 VP157 battery test circuit diagram
Contextual Info: Data Sheet Model No.:VP157 Document Number: SDS9904 Specifications Revision:2 Page 1 of 3 : Model No Battery Type For use with Color Battery Nominal Voltage Cut Off Voltage Capacity Continuous Operation Time* Temperature Range : : : : : : : : : : Casing Material

Contextual Info: J v L n T E C H N O L O G Y INC bOE D U p VLSI Technology , in c . IB D 0 1 0 2 f lT t 423 ^ IV T I 7 ^ -n -£ ? VP15311 SLTX FEATURES Monolithic SONET Line Terminating Transceiver for processing the line overhead of a receive and a transmit SONET STS-1, STS-3, STS-9, or STS-12 data stream.

Contextual Info: Supertex inc. VP1509 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package -90V 8.0Ω -0.5A VP1509NW Die† † MIL visual screening available. Features Advanced DMOS Technology ❏ Free from secondary breakdown

VP152A-72A2

Abstract: VP152
Contextual Info: Surface Mount Voltage Variable Phase Shifter 1495-1505 MHz Package Style 72 VP152A-72A2 Key Features • • • Low Loss: 2.5 dB Phase Shift: 360° min Solder Reflow to 240°C Guaranteed Specifications Insertion Loss dB TYP 2.5 MAX 3.2 Phase Shift (deg)

TRW J500

Abstract: k45752 52S marking
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / /¿PD42S4260L, 424260L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The fiPD42S4260L, 424260L are 262 144 words by 16 bits dynamic CMOS RAMs. The fast page mode and

V850E/IA1

Contextual Info: User’s Manual TM V850E/IA1 32-Bit Single-Chip Microcontrollers Hardware µPD703116 µPD703116 A µPD703116(A1) µPD70F3116 µPD70F3116(A) µPD70F3116(A1) Document No. U14492EJ3V0UD00 (3rd edition) Date Published February 2003 N CP(K) Printed in Japan

Contextual Info: User’s Manual 78K0/KC1 8-Bit Single-Chip Microcontrollers µPD780111 µPD780112 µPD780113 µPD780114 µPD78F0114 µPD780111 A µPD780112(A) µPD780113(A) µPD780114(A) µPD78F0114(A) Document No. U16227EJ3V0UD00 (3rd edition) Date Published February 2005 N CP(K)

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD16833A MONOLITHIC QUAD H BRIDGE DRIVER CIRCUIT DESCRIPTION The µPD16833A is a monolithic quad H bridge driver IC which uses power MOS FETs in its driver stage. By using the MOS FETs in the output stage, this driver IC has a substantially improved saturation voltage and power consumption as

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD16882 MONOLITHIC CD-ROM/DVD-ROM 3-PHASE SPINDLE MOTOR DRIVER DESCRIPTION The µPD16882 is a CD-ROM/DVD-ROM 3-phase spindle motor driver consisting of a CMOS controller and MOS bridge outputs. By employing 3-phase full-wave PWM as the drive method and MOSFETs at the output stage, it has been

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

camera motors

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD78363A,78365A,78366A,78368A 16/8-BIT SINGLE-CHIP MICROCONTROLLERS DESCRIPTION µPD78366A is provided with a high-speed, high-performance CPU and powerful operation functions. Unlike the existing µPD78328, µPD78366A is also provided with a high-resolution PWM signal output function which

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

29m33

Abstract: NEC 29M10 29m05 29m33 transistor
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid