VOLTAGE DEPENDENT RESISTORS SIEMENS Search Results
VOLTAGE DEPENDENT RESISTORS SIEMENS Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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DF2B20M4SL |
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TVS Diode (ESD Protection Diode), Bidirectional, +/-18.5 V, SOD-962 (SL2) | Datasheet | ||
DF2B6M4ASL |
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TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) | Datasheet | ||
DF2B7BSL |
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TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) | Datasheet | ||
DF2B5BSL |
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TVS Diode (ESD Protection Diode), Bidirectional, +/-3.3 V, SOD-962 (SL2) | Datasheet | ||
DF2S23P2FU |
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TVS Diode (ESD Protection Diode), Unidirectional, 21 V, SOD-323 (USC) | Datasheet |
VOLTAGE DEPENDENT RESISTORS SIEMENS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SIEMENS 2.1 Magneto Resistors Fundamentals Magneto resistors are magnetically influenced resistors of InSb/NiSb material which work according to the Gauss effect. The charge carriers which flow through the semiconductor material experience a sideways action in a traverse magnetic field by |
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KPY 43-RContextual Info: Technische Grundlagen Technical Basics SIEMENS 1 Technische Grundlagen 1 Technical Basics Drucksensoren sind Meßumwandler, welche die physikalische Größe Druck in ein elek trisches Signal umwandeln. Ihr Kernstück ist eine Meßzelle, bestehend aus einem |
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SDH siemens
Abstract: 2N3904 PNP stm siemens S1202 S3037 V23806-A84-C2 V23826-H18-C63 transistor K 603 603 transistor
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S3037 S3037 STS-12/STM-4 STS-12/STM-4 SDH siemens 2N3904 PNP stm siemens S1202 V23806-A84-C2 V23826-H18-C63 transistor K 603 603 transistor | |
STANDARD PIN DETAILS OF 2N3904 NPN TRANSISTOR
Abstract: SDH siemens stm siemens S1201 S1202 S3019 V23806-A84-C2 V23826-H18-C63 transistor 2N3904
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S3019 S3019 S1202 NILE/S1201 STS-12/STM-4 STS-12/STM-4 STANDARD PIN DETAILS OF 2N3904 NPN TRANSISTOR SDH siemens stm siemens S1201 V23806-A84-C2 V23826-H18-C63 transistor 2N3904 | |
4951Contextual Info: SIEMENS Current-Monitoring 1C TLE 4951 Preliminary Data Bipolar IC Features • • • • • • Input currents max 25 nA, protective resistors can be connected in series Effective protection against destruction by excessive voltages such as load dump pulses occuring in cars |
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P-DIP-14-1 P-DSO-14-1 4951 | |
incremental encoders siemens
Abstract: AFL smd Marking AFL smd code gmr sensor Angle Sensor Magneto Resistors FL005 siemens gmr magnetic field sensor siemens AFL MARKING GMR B6 application
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GPW06rcuit. incremental encoders siemens AFL smd Marking AFL smd code gmr sensor Angle Sensor Magneto Resistors FL005 siemens gmr magnetic field sensor siemens AFL MARKING GMR B6 application | |
incremental encoders siemens
Abstract: GMR sensor siemens gmr magnetic field sensor siemens
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Contextual Info: SIEMENS Giant Magneto Resistive Position Sensor B6 Preliminary Data This angle sensor is based on the Giant Magneto Resistive GMR technology. It is outstanding for the huge tolerances it offers to the user in assembly. Features • G M R sensor in SMD package |
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8 pin ic A 4506
Abstract: ic a 4506 PSB4506A 4506a-t A 4506 v Q67000-A6019 PSB4506 microphone preamplifier smd code Yj 33 PSB45030
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4506-T; 8 pin ic A 4506 ic a 4506 PSB4506A 4506a-t A 4506 v Q67000-A6019 PSB4506 microphone preamplifier smd code Yj 33 PSB45030 | |
Contextual Info: SIEMENS Differential Magnetoresistive Sensor FP 201 L 100 Features • Extremely high output voltage • 2 independently biased magnetic circuits • Robust housing • Signal amplitude independent of operating speed • Screw mounting possible 0.55 0.45 a |
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GPX06771 Q65210-L101 | |
P-DIP-20-1
Abstract: TDA 4718 B TDA 4716 C equivalent 20/TDA 4716 C siemens pdip 14
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P-DIP-14-1 P-DIP-20-1 TDA 4718 B TDA 4716 C equivalent 20/TDA 4716 C siemens pdip 14 | |
siemens hall ferriteContextual Info: SIEMENS Magnetics 1.1 Magnetic units and definitions 1.1.1 Magnetic flux <I> The magnetic flux <1> results as a product of electric voltage and time. The S.l. unit of magnetic flux is the Weber Wb or the Volt-second (Vs). If the magnetic flux <J>changes |
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Contextual Info: SIEMENS Non-Contact Magnetically Actuated Potentiometers An always reliable fully automatic exchange of information at the interface between mechanics and electronics is one of the fundamental requirements for successful automation in all fields. In many applications today, mechanical variables such as |
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smd marking YdContextual Info: SIEMENS 8 X Digital Sensor Interface FZE 1658G Features • Input protection against 2000 V burst/500 V surge pulse according to IEC 801 4/5 • Input characteristic according to IEC 65 A, type 2 24 V DC • Digital filter • Serial in/out for easy cascading |
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1658G burst/500 Q67000-A8361 P-DSO-24-1 1658G 35x45' smd marking Yd | |
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Differential Pressure siemens
Abstract: KPY 10
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Contextual Info: S IE M E N S Universal LCD Driver MEB 0804 M OSIC Type Ordering Code Package Quantity per Order Pieces MEB 0804 Q67100-Y685 MIKROPACK*) 500-2500 Shipment of quantities will be on metal film spools (CMOS!)- These films spools are the property of Siemens and must be returned when empty. |
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Q67100-Y685 | |
smd transistor 43B
Abstract: mdn 3bt hst 3bt 1 E3040 BTS410H smd zener diode code AST BTS412B BTS 132 SMD STT 3 SIEMENS 410D
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BTS410H T0220AB/5 30pAtyp, 10jis 30yAtyp 23SbOS C67078-S5305-A17 E3040 smd transistor 43B mdn 3bt hst 3bt 1 E3040 BTS410H smd zener diode code AST BTS412B BTS 132 SMD STT 3 SIEMENS 410D | |
smd transistor s71
Abstract: BTS410F e3040 410D C67078-S5305-A5 power transistor GPT051S6 s71 smd zener diode BTS41OF C67078-S5303-A21
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T0220AB/5 235b05 0G547QÃ C67078-S5305-A5 E3040 C67078-S5305-A9 E3043 C67078-S5305-A14 gpt05547 E3062 smd transistor s71 BTS410F e3040 410D C67078-S5305-A5 power transistor GPT051S6 s71 smd zener diode BTS41OF C67078-S5303-A21 | |
g0547
Abstract: 410D 410E 410H BTS412B BTS412B circuit
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T0220AB/5 30jiAtyp fl235bG5 DDS4754 BTS412B C67078-S5300-A9 E3040 C67078-S5300-A10 E3043 g0547 410D 410E 410H BTS412B circuit | |
PROFET BTS 410E
Abstract: BTS412B ScansUX7 410D 410E 410F 410H bts 412b
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T0220AB/5 BTS412B C67078-S5300-A9 E3040 C67078-S5300-A10 E3043 C67078-S5300-A16 CPT05547 E3062 PROFET BTS 410E ScansUX7 410D 410E 410F 410H bts 412b | |
Contextual Info: SIEMENS BTS 412B PROFET • • • • • High-side switch Short-circuit protection Overtemperature protection Overload protection Load dump protection’ • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Reverse battery protection 1) |
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T0220AB/5 BTS412B E3043 C67078-S5300-A9 C67078-S5300-A16 E3040 E3062 C67078-S5300-A10 C67078-S5300-A15 E3062A | |
BTS 302
Abstract: siemens LAL 2.25 BTS410G BTS302 ZENER A24 e3040 410H DIODE smd Wj 20/BTS 302
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BTS410G T0220AB/5 6235bOS fl23Sfc 0GSH720 C67078-S5305-A6 E3040 BTS 302 siemens LAL 2.25 BTS410G BTS302 ZENER A24 e3040 410H DIODE smd Wj 20/BTS 302 | |
smd diode u1j
Abstract: BTS410E diode U1J ON semiconductor 935 738 U1J 412 U1J e3040 smd transistor GY 740 Diode SMD U1J 410D 410E
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BTS410E O220AB/5 C67078-S5305-A4 E3040 C67078-S5305-A8 E3043 C67078-S5305-A12 GPT05S47 E3062 C67078-S5305-A28 smd diode u1j BTS410E diode U1J ON semiconductor 935 738 U1J 412 U1J e3040 smd transistor GY 740 Diode SMD U1J 410D 410E | |
4605-3Contextual Info: SIEMENS Control IC for Switched-Mode Power Supplies using MOS-Transistor TDA 4605-3 Bipolar 1C Features • • • • • • • • • Fold-back characteristics provides overload protection for external components Burst operation under secondary short-circuit condition |
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Q6700005-3 UED00496 4605-3 |