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    VNS1NV04DP Search Results

    VNS1NV04DP Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    VNS1NV04DP-E
    		STMicroelectronics PMIC - MOSFET, Bridge Drivers - Internal Switch, Integrated Circuits (ICs), MOSFET N-CH 40V 1.7A 8SOIC Original PDF 24
    VNS1NV04DPTR-E
    		STMicroelectronics PMIC - MOSFET, Bridge Drivers - Internal Switch, Integrated Circuits (ICs), MOSFET N-CH 40V 1.7A 8SOIC Original PDF 24
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    VNS1NV04DP Price and Stock

    STMicroelectronics

    STMicroelectronics VNS1NV04DPTR-E

    IC PWR DRIVER N-CHANNEL 1:1 8SO
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    STMicroelectronics VNS1NV04DPTR-E 16,593 1
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    VNS1NV04DPTR-E 284
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    VNS1NV04DPTR-E 284
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    STMicroelectronics VNS1NV04DP-E

    IC PWR DRIVER N-CHANNEL 1:1 8SO
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    STMicroelectronics VNS1NV04DP

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    Win Source Electronics VNS1NV04DP 22,500
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    STMicroelectronics VNS1NV04DPTR

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    Win Source Electronics VNS1NV04DPTR 22,500
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    STMicroelectronics VNS1NV04DPT

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    Win Source Electronics VNS1NV04DPT 20,540
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    VNS1NV04DP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: VNS1NV04DP-E OMNIFET II fully autoprotected Power MOSFET Features Max On-state resistance 1 RDS(ON) 250m (1) Current limitation (typ) (1) Drain-Source clamp voltage ILIMH 1.7A VCLAMP 40V 1. Per each device. SO-8 • Linear current limitation • Thermal shutdown


    Original     		VNS1NV04DP-E VNS1NV04DP-E PDF

    VNS1NV04DP-E

    Abstract: 2010 so-8 VNS1NV04DP vns1nv04dptr-e
    Contextual Info: VNS1NV04DP-E OMNIFET II fully autoprotected Power MOSFET Features Max On-state resistance 1 Current limitation (typ) RDS(ON) 250mΩ (1) Drain-Source clamp voltage (1) ILIMH 1.7A VCLAMP 40V 1. Per each device. SO-8 • Linear current limitation ■ Thermal shutdown


    Original     		VNS1NV04DP-E VNS1NV04DP-E 2010 so-8 VNS1NV04DP vns1nv04dptr-e PDF

    VNS1NV04DP

    Abstract: VNS1NV04D vns1nv04dpe
    Contextual Info: VNS1NV04DP-E OMNIFET II fully autoprotected Power MOSFET Features Max On-state resistance 1 Current limitation (typ) RDS(ON) 250mΩ (1) Drain-Source clamp voltage (1) ILIMH 1.7A VCLAMP 40V 1. Per each device. SO-8 • Linear current limitation ■ Thermal shutdown


    Original     		VNS1NV04DP-E 2002/95/EC VNS1NV04DP-E VNS1NV04DP VNS1NV04D vns1nv04dpe PDF

    Contextual Info: VNS1NV04DP-E OMNIFET II fully autoprotected Power MOSFET Features Max On-state resistance 1 Current limitation (typ) RDS(ON) 250mΩ (1) Drain-Source clamp voltage (1) ILIMH 1.7A VCLAMP 40V 1. Per each device. SO-8 • Linear current limitation ■ Thermal shutdown


    Original     		VNS1NV04DP-E VNS1NV04DP-E PDF

    VNS3NV04P

    Contextual Info: Smart power solutions for car body applications STMicroelectronics - October 2013 - Printed in United Kingdom - All rights reserved The STMicroelectronics corporate logo is a registered trademark of the STMicroelectronics group of companies All other names are the property of their respective owners


    Original     		SGCAR1013 TQFP64 PowerSSO-12/16 PowerSSO-36 O-220 OT-223 PowerSO-10 VNS3NV04P PDF