VN20 Search Results

Contextual Info: fîàSupertex inc. VN2010L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss/ R d S(ON ^ G S (th ) b v dgs (max) (max) TO-92 200V 10£i 2.0V VN2010L Features Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a

VN2010

Contextual Info: VN2010L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON V g Order Number / Package S(U i ) b v dgs (max) (max) TO-92 200V 10Q 2.0V VN2010L Features Advanced DMOS Technology □ Free from secondary breakdown □ Low power drive requirement

VN2020L

Contextual Info: • SILICONIX INC C T Siliconix 855*4735 00140=1« 1 ■ VN2010 SERIES J L M in c o r p o r a t e d N-Channel Enhancement-Mode M O S Transistors T-TSt-2.5 PRODUCT SUMMARY PART NUMBER V BR DSS fDS(ON) (V) (« ) TO-92 *D (A) PACKAGE VN2010L 200 10 0.19 TO-92

Contextual Info: VN2010L N-Channel Enhancement-Mode MOS Transistor JTtSgft PRODUCT SUMMARY V BR DSS (V) 200 Performance Curves: TO-92 (TO-226AA) T •d (A) 10 0.19 VNDQ20 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN 3 .1— Ln ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)

equivalent of BS107

Abstract: BS107 VN2010L BS107 application
Contextual Info: VN2010L/BS107 Vishay Siliconix N-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 VN2010L 200 BS107 D D D D D Low On-Resistance: 6 W

Contextual Info: ^ Su perte x inc. VN2010L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ BV dgs Order Number / Package R DS ON ^G S (th) (max) (max) TO-92 10 ÌÌ 2.0V VN2010L 200V Features Advanced DMOS Technology Li These enhancement-mode (normally-off) transistors utilize a

Contextual Info: G SGS-THOMSON l VN20N HIGH SIDE SM AR T PO W ER SOLID STATE RELAY TYPE VN20N V dss R D S o n loUT Vcc 60 V 0.05 Q 28 A 26 V . O UTPU T CURR ENT (CO NTINUO US): 28A @ Tc=25°C . 5V LOGIC LEVEL C O M PATIBLE INPUT . THERM AL SHUT-DO W N . UNDER VO LTAG E SHUT-DO W N

VN2001L

Abstract: VN2001L-TR1 Trans Switching
Contextual Info: VN2001L Vishay Siliconix New Product N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS Min (V) 200 VGS(th) (V) rDS(on) Max (W) 1.2 @ VGS = 10 V ID (A) 0.56 2 to 4 1.3 @ VGS = 6 V 0.54 D TrenchFETr Power MOSFET APPLICATIONS D CRT Monitor HD Drive Circuit

VN20AN

Contextual Info: VN20AN HIGH SIDE SMART POWER SOLID STATE RELAY TYPE V DSS R DS on I OUT VC C VN20AN 60 V 0.05 Ω 33 A 36 V • ■ ■ ■ ■ ■ OUTPUT CURRENT (CONTINUOUS): 33A @ Tc=25oC LOGIC LEVEL 5V COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE PROTECTION OPEN DRAIN DIAGNOSTIC OUTPUT

VN2010L

Abstract: p-channel 200V
Contextual Info: VN2010L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) VGS(th) (max) 200V 10Ω 2.0V Order Number / Package TO-92 VN2010L Features Advanced DMOS Technology • Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a

BS107

Abstract: VN2010L
Contextual Info: VN2010L/BS107 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VN2010L 200 BS107 rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 Features Benefits Applications D D

Contextual Info: VN2010L/BS107 Vishay Siliconix N-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 VN2010L 200 BS107 D D D D D Low On-Resistance: 6 W

Contextual Info: VN2001L Vishay Siliconix New Product N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS Min (V) 200 VGS(th) (V) rDS(on) Max (W) 1.2 @ VGS = 10 V ID (A) 0.56 2 to 4 1.3 @ VGS = 6 V 0.54 D TrenchFETr Power MOSFET APPLICATIONS D CRT Monitor HD Drive Circuit

SC0724D

Abstract: SO-10TM
Contextual Info: rz7 SGS-THOMSON A T # R HIGH SIDE SMART POWER SOLID STATE RELAY PRELIMINARY DATA . . . . . . TYP E V dss RDS on IOUT Vcc VN20ANSP 60 V 0.05 Î2 33 A 36 V OUTPUT CURRENT (CONTINUOUS): 33A @ Tc=25°C LOGIC LEVEL 5V COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE PROTECTION

BS107

Abstract: 55C24 VN2010L
Contextual Info: VN2010L/BS107 Vishay Siliconix N-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 VN2010L 200 BS107 D D D D D Low On-Resistance: 6 W

VN20NSP

Contextual Info: VN20NSP HIGH SIDE SMART POWER SOLID STATE RELAY PRELIMINARY DATA TYPE V DSS R DS on I OUT VC C VN20NSP 60 V 0.05 Ω 33 A 26 V • ■ ■ ■ ■ ■ OUTPUT CURRENT (CONTINUOUS): 33A @ Tc=25oC 5V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE SHUT-DOWN

VN2010L

Abstract: S0427 siliconix marking code BS107
Contextual Info: VN2010L/BS107 Vishay Siliconix N-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V (B R )D S S M i n ( V ) r D S (o n) M a x ( Q ) VGS(lh)(V) 10 @ V qs = 4.5 V 0.8 to 1.8 0.19 28 @ V gs = 2.8 V 0.8 to 3 0.12 VN2010L b (A) 200 BS107 Low On-Resistance: 6 £2

ha1100

Abstract: UG-94 bs107
Contextual Info: Temic VN2010L/BS107 S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max <Q) VGS(th)(V) Id (A) 10 @ V o s = 4.5 V 0.8 to 1.8 0.19 28 @ V o s = 2.8 V 0.8 to 3 0.12 V N2010L 200 BS107

Contextual Info: Temic VN2010L/BS107 N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS VN2010L Mín (V) r DS(on) 200 BS107 Max (Q) Id (A) (V) VGS(th) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12

Contextual Info: mSg3& VNDQ20 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-92 TO-226AA • BS107 VN2010L Single Chip • Available as VNDQ5CHP DEVICE TYPICAL CHARACTERISTICS Output Characteristics fo r Low Gate Drive Ohmic Region Characteristics VDS (V) VDS (V)

Contextual Info: r Z * 7 7 S G S -T H O M S O N # V N 20N S P m o ra « R HIGH SIDE SM ART POW ER SOLID STATE RELAY PRELIMINARY DATA TYP E V dss R d S o ii loU T V cc VN20NSP 60 V 0.05 a 33 A 26 V • OUTPUT CURRENT (CONTINUOUS): 33A @ Tc=25°C ■ 5V LOGIC LEVEL COMPATIBLE INPUT

VN2001L

Abstract: VN2001L-TR1
Contextual Info: VN2001L Vishay Siliconix New Product N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS Min (V) 200 VGS(th) (V) rDS(on) Max (W) 1.2 @ VGS = 10 V ID (A) 0.56 2 to 4 1.3 @ VGS = 6 V 0.54 D TrenchFETr Power MOSFET APPLICATIONS D CRT Monitor HD Drive Circuit

VN20N

Contextual Info: VN20N HIGH SIDE SMART POWER SOLID STATE RELAY TYPE VN20N • ■ ■ ■ ■ ■ V DSS R DS on I OUT VC C 60 V 0.05 Ω 33 A 26 V OUTPUT CURRENT (CONTINUOUS): 33A @ Tc=25 oC 5V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE SHUT-DOWN OPEN DRAIN DIAGNOSTIC OUTPUT

VN20NSP

Contextual Info: VN20NSP HIGH SIDE SMART POWER SOLID STATE RELAY PRELIMINARY DATA TYPE V DSS R DS on I OUT VC C VN20NSP 60 V 0.05 Ω 33 A 26 V • ■ ■ ■ ■ ■ OUTPUT CURRENT (CONTINUOUS): 33A @ Tc=25oC 5V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE SHUT-DOWN