VN0104 Search Results

SD oid 3C

Abstract: VN0104N6
Contextual Info: VN0104 VN0106 VN0109 Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information Order Num ber / Package BVDSS / ^DS ON ^D(ON) (max) (min) b v dgs TO-52 TO-92 Quad P-DIP* Diet 40V 3.0Î2 2.0A — VN0104N3 VN0104N6 — 60V 3.0Î2 2.0A

VN0106N7

Contextual Info: — VN0104N6/VN0104N7 VN0106N6/VN0106N7 N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information b v dss/ R d S ON Order Number / Package BVdgs (max) 14-Pin P-Dip 14-Pin C-Dip* 40V 3Q VN0104N6 VN0104N7 60V 3Q VN0106N6 VN0106N7 * 14-pin Side Brazed C eram ic Dip.

VN0104

Contextual Info: VN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

Contextual Info: S u p e rte x inc. VN0104N6A/N0104N7 VN0106N6/VN0106N7 N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information b v dss/ Order Number / Package ^D S O N (max) 14-Pin P-DIp 14-Pin C-Dip* 40V 3 fi VN0104N6 VN0104N7 60V 30 VN0106N6 VN0106N7

VN0104

Contextual Info: Supertex inc. VN0104 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 37 37 11 ± 1.5 Au 1 (mils) VN0104 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description

Contextual Info: Supertex inc. VN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input

Contextual Info: VN0104N6 Transistors N-Channel Enhancement Mode MOSFET Array Military/High-RelN V BR DSS (V)40 V(BR)GSS (V)20 I(D) Max. (A)560m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)2.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)2.0

125OC

Abstract: VF15 VN0104 VN0104N3-G VN1504NW
Contextual Info: Supertex inc. VN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input

TA 8783 N

Abstract: pin IC 8783 n ss 7941 941L
Contextual Info: TELEDYNE COMPONENTS 2flE D • fl^Ji7bQH QQQb471 'J J B lT F l CD II ^ J s £ \ ^Z . VN0104, VN0106 SEMICONDUCTOR_VNOIQ9 N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs T‘ *7' u ORDERING INFORMATION TO-226AA TO-92 Plastic Package Sorted Chips In Waffle Pack

VN0106N9

Abstract: VN0104N2 VN0109n5 VN01A VN0106N5
Contextual Info: ^ Supertex inc . V N 01A N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices b v dss / b v dgs Order Number / Package ^DS O N '□(ON) TO-39 TO-52 TO-92 TO-220 Quad P-DIP Quad C-DIP* DICE' VN0104N2 VN0104N9 VN0104N3

DSFP-VN0104

Contextual Info: VN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

VN0104N6

Abstract: VN0106N6 VN0106N7 VN0104N7 Low Input Capacitance MOS FET "Bipolar Transistors" FAST DMOS FET Switches n-CHANNEL FAST DMOS FET Switches MOS FET Array SUPERTEX VN0106N6
Contextual Info: VN0104N6/VN0104N7 VN0106N6/VN0106N7 N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) 14-Pin P-Dip 14-Pin C-Dip* 40V 3Ω VN0104N6 VN0104N7 60V 3Ω VN0106N6 VN0106N7 * 14-pin Side Brazed Ceramic Dip.

VN0109N5

Abstract: VN0109N VN0109N2 VN0104N3 VN0106N7 VN0109 FAST DMOS FET Switches
Contextual Info: Super t e x inc VN0104 VN0106 VN0109 • N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information JÎ BV0SS/ ^DS ON BV qgs (max) Order Number / Package TO-39 TO-52 TO-92 TO-220 Quad P-DIP* Quad C-DIP* Diet — — VN0104N3 — VN0104N6 — VN0104ND

VN0109n5

Abstract: VN0106N9 VN0106N5 VN0106N6 VN0109N2 VN0104N6 FAST DMOS FET Switches
Contextual Info: ^Supertex inc. VN0104 VN0106 VN0109 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information b v dss / b v dgs ^DS ON Order Number / Package I d (ON) (max) (min) TO-39 TO-52 TO-92 TO-220 Quad P-DIP Quad C-DIP* DICEt 40V 3Î2 2.0A VN0104N2 VN0104N9

Contextual Info: Supertex inc. VN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode

Contextual Info: VN0104N3 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)40 V(BR)GSS (V)20 I(D) Max. (A)500m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)2.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)-55

VN0109N5

Abstract: VN0106N6 VN0109N2 AN-D15 VN0104 VN0104N3 VN0104N6 VN0106 VN0106N3 VN0109
Contextual Info: DMOS Application Note AN-D15 3 Understanding MOSFET Data The following outline explains how to read and use Supertex MOSFET data sheets. The approach is simple and care has been taken to avoid getting lost in a maze of technical jargon. The VN0104/VN0106/VN0109 data sheet was chosen as an

VN0104N7

Contextual Info: VN0104N7 Transistors N-Channel Enhancement Mode MOSFET Array Military/High-RelN V BR DSS (V)40 V(BR)GSS (V)20 I(D) Max. (A)700m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)2.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)3.0

MOS FET Array

Abstract: FAST DMOS FET Switches n-CHANNEL mos die VN0104N6 VN0104 VN0106 VN0106N6
Contextual Info: VN0104 VN0106 N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS / BVDGS RDS ON (max) Order Number / Package 40V 3.0Ω VN0104N6 60V 3.0Ω VN0106N6 14-Pin P-Dip Features Advanced DMOS Technology • 4 independent channels

VN0104N2

Abstract: VN0106N5 VN0109 VN0106N9 VN0109N vn0109n5 VN0104/VN0106A/N0109
Contextual Info: VN0104 VN0106 VN0109 Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVDSS/ BVdgs R d S ON Order Number / Package I d (ON) (max) (min) TO-39 TO-52 TO-92 TO-220 Quad P-DIP* Quad C-DIP* Die' 40V 3Q 2.0A VN0104N2 VN0104N9 VN0104N3

VN0104

Contextual Info: VN0104 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 37 37 11 ± 1.5 Au 1 (mils) VN0104 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

VN0109

Abstract: vn0109n5 VN0106 vn0109n2 VN0109N9 VN0104ND VN0104N6 VN0104 VN0104N3 VN0106N3
Contextual Info: VN0109 E – T E L O S B –O VN0104 VN0106 VN0109 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information Order Number / Package BVDSS / RDS ON ID(ON) BVDGS (max) (min) TO-39 TO-52 TO-92 TO-220 Quad P-DIP* Quad C-DIP* Die† 40V 3.0Ω 2.0A —

Contextual Info: Supertex inc. VN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds

VN0104

Contextual Info: VN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination