VMIL Search Results

VMIL100

Abstract: vmil
Contextual Info: VMIL 100 100 Watts, 28 Volts, Class AB Defcom 100 - 200 MHz GENERAL DESCRIPTION CASE OUTLINE The VMIL100 is an input matched COMMON EMITTER broadband transistor specifically intended for use in the 100-200 MHz frequency band. It may be operated in Class AB or C. Gold metallization and silicon diffused

Contextual Info: VMilXIVM 19-4728; Rev 1; 3/94 Im proved, Quad, SPST Analog Sw itches _New Features ♦ Plug-In Upgrade for Industry-Standard DG411/DG412/DG413 ♦ Improved rctSfON Match Between Channels 30 max) ♦ Guaranteed rFLAT(ON) Over Signal Range (A4Q) ♦ Improved Charge Injection (10pC max)

VMIL100

Abstract: B25-28 acrian inc B12-28 UUU1274 VMIL100-2
Contextual Info: " T - 3 7 - /S ACRIAN INC GENERAL ^7 D E ^ u i ö d - n ö UUU1274 Ô VMIL100 D E S C R IP T IO N 100 WATTS - 28 VOLTS tOO - 200 MHz The VMIL 100 is intended for use in high power VHF 100-200 MHz applications. Internal. matching simplifies design, while gold

Contextual Info: MHM VMilWiiliittlf Bilifc www.mwtinc.com Email: info@mwtinc.com TYPICAL SPECIFICATIONS AT 25 eC • DUAL ADJUSTABLE VOLTAGE REGULATOR • INTEGRAL 50 OHM LINE FOR RE INTERCONNECTION • CURRENT CAPABILITY: UP TO 400raA PER CHIP 800mA MAX PER MODULE • BUILT-IN REVERSE VOLTAGE PROTECTION

GPM10

Abstract: ISL12020M ISL12020MIRZ ISL12022M TB347 TB379 12020MIRZ
Contextual Info: ISL12020M Real Time Clock with Embedded Crystal, ±5ppm Accuracy Data Sheet January 15, 2009 Low Power RTC with VDD Battery Backed SRAM and Integrated ±5ppm Temperature Compensation and Auto Daylight Saving The ISL12020M device is a low power real time clock RTC

ISL12023

Abstract: ISL12023IVZ TB347 TB379
Contextual Info: ISL12023 Real Time Clock with On Chip Temp Compensation ±5ppm Data Sheet June 24, 2009 Low Power RTC with Battery-Backed SRAM and Embedded Temp Compensation ±5ppm with Auto Daylight Saving The ISL12023 device is a low power real time clock with an embedded Temp sensor for oscillator compensation,

This article

Abstract: vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet
Contextual Info: Surfacing the facts of DMOS Power RF transistors from Published Data Sheets by S.K. Leong POLYFET RF DEVICES August 22, 1991 Power RF Mosfets have made considerable progress since the days of introduction some 15 years ago. Original manufacturers, Siliconix and Acrian have left

TEMIC 3400

Abstract: gsa 25
Contextual Info: Temic U4050B S e mi c o n d u c t o r s Speech Circuit with Line-Powered Loudspeaker Amplifier Description The electronic speech circuit U4050B is a linear integrated circuit for use in telephone sets. It replaces the hybrid transformer, sidetone equivalent and ear

Contextual Info: LM4912 LM4912 Stereo 40mW Low Noise Headphone Amplifier Literature Number: SNAS175D October 20, 2011 Stereo 40mW Low Noise Headphone Amplifier • Output Power at 1kHz with VDD = 3V, 1% THD General Description The LM4912 is an stereo audio power amplifier capable of

DIODE s2l

Contextual Info: Super Fast Recovery Diode Axial Diode m tm S2L40U OUTLINE U n it i m m Package : AX10 W e ig h t 0 .6 5 g T y p 4 0 0 V 1.1 A Feature -L-JO. 26.5 26.5 <b\A • L o w N oise • trr=35ns (1> • trr= 3 5 n s Main Use 2 M arking • S w itc h in g R egu lator

Contextual Info: 82560 HOST INTERFACE AND MEMORY CONTROLLER • Host Interface to the IBM PC/XT/AT and PS/2 Buses for 82590, 82592, and 82588 LAN Controllers ■ Allows 32-, 16-, and 8-Bit Data Transfers ■ Supports Local Static RAM — Up to 32 Kilobytes — Programmable Access Time

43bh

Abstract: marking code 42ae marking JC 6f diode CXK77P18E160GB CXK77P36E160GB CXK77P36E160GB-4AE CXK77P36E160GB-4E 43AF marking 43AF
Contextual Info: SONY CXK77P36E160GB / CXK77P18E160GB 16Mb LW R-L HSTL High Speed Synchronous SRAMs 512K x 36 or 1M x 18 8Mb LW R-L w/ EC HSTL High Speed Synchronous SRAMs (256K x 36 or 512K x 18) 4/42/43/44 Preliminary Description The CXK77P36E160GB (organized as 524,288 words by 36 bits) and the CXK77P18E160GB (organized as 1,048,576 words

L6353

Abstract: L6353D igbt block diagram
Contextual Info: L6353 SMART DRIVER FOR POWER MOS & IGBT PEAK HIGH OUTPUT CURRENT CAPABILITY +8A WIDE SUPPLY VOLTAGE RANGE (12.5 TO 18V) 0 TO –7.5V NEGATIVE BIAS VOLTAGE SUPPLY RANGE OVER CURRENT AND DESATURATION PROTECTION OF THE EXTERNAL POWER DEVICE (EXTERNALLY PROGRAMMABLE)

RF3833

Abstract: 4TPE220MFC2 BSC035N04LS 25SVPD82M LTC3833 LTC3833EUDC SUNCON capacitor SUNCon me LTC3833E LTC3833EFE
Contextual Info: LTC3833 Fast Accurate Step-Down DC/DC Controller with Differential Output Sensing DESCRIPTION FEATURES Wide VIN Range: 4.5V to 38V n V OUT Range: 0.6V to 5.5V n Output Accuracy: ±0.25% at 25°C and ±0.67% over Temperature n Differential Output Sensing Allowing Up to 500mV

CXK77L18R160GB-3

Abstract: CXK77L18R160GB-33 CXK77L18R160GB-4
Contextual Info: SONY CXK77L18R160GB 16Mb LW R-R HSTL High Speed Synchronous SRAM 1M x 18 3/33/4 Preliminary Description The CXK77L18R160GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 1,048,576 words by 18 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a one-deep write buffer

CXK79M36C163GB

Abstract: CXK79M36C163GB-33 CXK79M36C163GB-4 CXK79M36C163GB-5
Contextual Info: SONY ΣRAM CXK79M36C163GB 18Mb 1x2Lp LVCMOS High Speed Synchronous SRAMs 512Kb x 36 33/4/5 Preliminary Description The CXK79M36C163GB is a high speed CMOS synchronous static RAM with common I/O pins. It is manufactured in compliance with the JEDEC-standard 209 pin BGA package pinout defined for SigmaRAM™ devices. It integrates input registers,

7BDS

Abstract: tea 1601 t ADSP2101 MAX121 MAX121CAP MAX121CPE MAX121CWE TMS320 sick DS 50
Contextual Info: ADC w ith DSP In te rfa c e and 78dB SINAD The MAX121 is a co m p le te , BiCM O S, serial-output, sam ­ pling 14-bit a n a lo g -to -d ig ita l co nverter A D C that c o m ­ bines an o n -ch ip tra c k /h o ld and a low -drift, low-noise, b u rie d -z e n e r v o lta g e re fe re n ce w ith fa s t c o n v e rs io n

CXK79M36C160GB

Abstract: CXK79M36C160GB-33 CXK79M36C160GB-4 CXK79M36C160GB-5 CXK79M72C160GB CXK79M72C160GB-33 CXK79M72C160GB-4 CXK79M72C160GB-5
Contextual Info: SONY ΣRAM CXK79M72C160GB / CXK79M36C160GB 18Mb 1x1Lp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 33/4/5 Preliminary Description The CXK79M72C160GB (organized as 262,144 words by 72 bits) and the CXK79M36C160GB (organized as 524,288 words

A115B

Abstract: jesd22-A115B BAT54 ISL12020M ISL12022MA ISL12022MAIBZ ISL12022MAIBZ-T SC-20 BTSR-11
Contextual Info: ISL12022MA Features The ISL12022MA device is a low power real time clock RTC with an embedded temperature sensor and crystal. Device functions include oscillator compensation, clock/calendar, power fail and low battery monitors, brownout indicator, one-time, periodic or polled alarms,

t2d 76 diode value

Abstract: 2RSTPE330M9 LTC3854DDB 3854 ltc3608 LTC3854EMSE LTC3854 LTC3854E t2d 76 diode LTC3854I
Contextual Info: LTC3854 Small Footprint, Wide VIN Range Synchronous Step-Down DC/DC Controller Description Features n n n n n n n n n n n n n n Wide Operating VIN Range: 4.5V to 38V RSENSE or DCR Current Sensing ±1% 0.8V Reference Accuracy Over Temperature 400kHz Switching Frequency

CXK79M72C164GB-33

Abstract: CXK79M18C164GB CXK79M36C164GB CXK79M36C164GB-33 CXK79M36C164GB-4 CXK79M72C164GB CXK79M72C164GB-4 CXK79M72C164GB-5
Contextual Info: SONY ΣRAM CXK79M72C164GB CXK79M36C164GB CXK79M18C164GB 18Mb 1x1Dp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C164GB (organized as 262,144 words by 72 bits), CXK79M36C164GB (organized as 524,288 words by 36

BSC21

Abstract: BDT21 "Battery Status Monitor" ISL12023 ISL12023IVZ TB347 TB379 tK09 IDTR01 bsc22
Contextual Info: ISL12023 Real Time Clock with On Chip Temp Compensation ±5ppm Data Sheet March 26, 2008 Low Power RTC with Battery-Backed SRAM and Embedded Temp Compensation ±5ppm with Auto Day Light Saving The ISL12023 device is a low power real time clock with an embedded Temp sensor for oscillator compensation,

Contextual Info: SONY ΣRAM CXK79M72C165GB CXK79M36C165GB CXK79M18C165GB ΣRAMs: 16Mb 1x1z LVCMOS I/O 256K x 72 or 512K x 36 or 1M x 18 Organization 33/4/44 Preliminary Description The CXK79M72C165GB (organized as 262,144 words by 72 bits), CXK79M36C165GB (organized as 524,288 words by 36

ISL12020M

Contextual Info: DATASHEET Low Power RTC with Battery Backed SRAM, Integrated ±5ppm Temperature Compensation and Auto Daylight Saving ISL12020M Features The ISL12020M device is a low power Real Time Clock RTC with an embedded temperature sensor and crystal. Device functions include oscillator compensation, clock/calendar,