VM TECHNOLOGY Search Results

HA-201

Abstract: HA201
Contextual Info: VM 43217400C,VM 83217400C 4M ,8M x 32-Bit Dynamic RAM M odule_ VISWi Description The VM 43217400C and VM83217400C are 4M x 32-bit and 8M x 32-bit dynamic RAM modules. It is mounted by 8/16 pieces of 4 M x 4 DRAM VG2617400C ,and each in a standard 24/26 pin plastic SOJ packages.

VM-A41S

Abstract: VMA41S vm 68 VM-A05S VM-A10S VM-A11S VM-A12S VM-A18S VM-A26SC labview
Contextual Info: Vector Modulators for MCPA Applications VM Series TECHNICAL BULLETIN *MODEL VM-A26SC: [Frequency flatness at different bandwith settings] @ 2140MHz +/- 60MHz Atten setting@ 10dB 20dB Amp Flatness +/- dB 0.1 0.2 Phase Flatness +/- Deg 1.5 2 @ 2140MHz +/- 100MHz

mPD71055

Abstract: NEC V810 V30MX MPD7000 memory compiler OPENCAD CMOS Block library PD71059 MPD71051 NZ70008H 70008h
Contextual Info: DATA SHEET CB-C8VX/VM 0.5-Micron Cell Based CMOS ASIC Description NEC’s CB-C8VX/VM family facilitates the design of complete cell-based silicon systems composed of user-defined logic, complex macrofunctions such as microprocessors, intelligent peripherals, analog functions and

Contextual Info: VM S115 VLSI Data Sheet Techn >iogy VLSI Technology V M S 1 1 5 Data Sheet Revision: 2.0 VLSI Technology, Incorporated 1/28/99 Rev. 2.0 VM S11S VLSI ^ Data Sheet Technology Table of Contents 1 2 3 4 5 6 I n tr o d u c tio n .4

Contextual Info: MOTIEN VM Series TECHNOLOGY 25/30W 2:1 Regulated Single & Dual output Features T he VM series is a family of cost effective 25/30W single & dual output DC-DC converters. These converters combine nicklecoated copper package in a 2"x1.6" compatible case with high performance features such as 1500 VDC input/output isolation

Contextual Info: VM Series MOTIEN TECHNOLOGY 25/30W 2:1 Regulated Single & Dual output Features 25 5 T he VM series is a family of cost effective 25/30W single & dual output DC-DC converters. These converters combine nickle-coated copper package in a 2"x1.6" case with high performance features such as 1500 VDC input/output isolation voltage, continuous short

NZ70008H

Abstract: STEPS 30175 STR 6755 k2736 NZ70 NEC V30MX V30MX nec 2508 nec 772 K398
Contextual Info: DATA SHEET PRODUCT LETTER CB-C9VX/VM 0.35-Micron CMOS Cell-Based ASICs Description Figure 1: System-Level-Integration The CB-C9VX/VM family offers ultra-high performance, deep submicron cell-based ASICs for high-end applications requiring high speeds, high integration density and low power

upd4993

Abstract: f 49055 uPD72103 Z80 PROCESSOR in aerospace 49055 uPD71054 uPD7210 C50T uPD70008 72065B
Contextual Info: CB-C8VX/VM 3-Volt, 0.5-Micron Cell-Based CMOS ASIC NEC Electronics Inc. Preliminary April 1996 Figure 1. BGA Package Examples Description NEC's CB-C8VX/VM CMOS cell-based ASIC family facilitates the design of complete cell-based silicon systems composed of user-defined logic, complex

Contextual Info: VM Series MOTIEN TECHNOLOGY 25/30W 2:1 Regulated Single & Dual output Features 25 5 CB T he VM series is a family of cost effective 25/30W single & dual output DC-DC converters. These converters combine nickle-coated copper package in a 2"x1.6" case with high performance features such as Active Clamp Technology, continuous short circuit protection

Contextual Info: 3-Channel, Isolated, Sigma-Delta ADC with SPI ADE7912/ADE7913 Data Sheet FEATURES TYPICAL APPLICATIONS CIRCUIT NEUTRAL PHASE PHASE PHASE A C B 3.3V V1P VM IM PHASE A IP ADE7912/ ADE7913 V2P GNDISO_A GNDMCU 3.3V VM 3.3V IM PHASE B ADE7912/ ADE7913 IP V2P GNDISO_B

philips V30M

Contextual Info: CB-C8VX/VM 3-Volt, 0.5-M icron Cell-Based CMOS ASIC NEC NEC Electronics Inc. April 1996 Preliminary Figure 1. BGA Package Examples Description NEC's CB-C8VX/VM CMOS cell-based ASIC family facilitates the design of complete cell-based silicon system s composed of user-defined logic, complex

VG2618165BJ

Abstract: VG2618165 VM23218165 jcsr MAX3242 VM23218165B
Contextual Info: VM 13218165B,VM 23218165B 1M,2M x 32-Bit Dynamic RAM Module v is m D escription The VM13218165B and VM23218165B are 1 M x 32-bit and 2M X 32-bit dynamic RAM modules. It is mounted by 2/4 pieces of 1M x 16 DRAM VG2618165BB , dnd each in a standard 42 pin plastic SOJ packages. The VM13218165B and VM23218165B makes high

Contextual Info: IDT - Integrated Device Technology - ViewXpand Multi-Monitor Controller IC > VM. Integrated Device Technology Products | Applications Display / Video Solutions Search | | PanelPort Display Solutions Support Page 1 of 2 The Analog and Digital Company ™

Contextual Info: IDT - Integrated Device Technology - ViewXpand Multi-Monitor Controller IC > VM. Integrated Device Technology Products | Applications Display / Video Solutions Search | | PanelPort Display Solutions Support Page 1 of 2 The Analog and Digital Company ™

VME DAISY CHAIN

Abstract: vme case VME3000 QQQ0203 PLD VME MM5565 PLX448
Contextual Info: one VME 3000/3010 T'm c > . ~ o > - c j a v ^ VM EbU S S eptem b er Interrupt G enerator P L X TECHNOLOGY CORP • MbE D 0000200 1 ■ PLX Distinctive Features_ Applications_ T =:5 ^ ' 3 & - / 3

Contextual Info: SSP1N60A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ B BVpss = 600 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 pA M ax @ VM = 600V

c125t

Abstract: SSH4N80
Contextual Info: SSH4N80AS Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ BVdss = 800V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 pA M ax. @ VM = 800V

Contextual Info: ERFS644A Advanced Power MOSFET FEATURES BVdss = 250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 MA Max. @ VM = 250V

Contextual Info: TOIM3000 vm & w f Vishay Telefunken ▼ Integrated Interface Circuits ULC Technology: High-performance gate array package using dual metal layer CMOS technology, featuring sub-micron channel length 0.8 |xm Description The TOIM300 1C provides the proper timing for the

SSS5N80A

Abstract: MOSFET 800V 3A
Contextual Info: SSS5N80A Advanced Power MOSFET FEATURES b vdss <r Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 MA Max @ VM = 800V ^D S (o n ) = 2.2 Q < CO II

baud rate converter

Abstract: 9600 baud rate converter max232 16 pin diagram with pin function MAX232 Telefunken led TFDS400 4000-Series Infrared Transceiver tc 1627
Contextual Info: TOIM3232 vm & w f Vishay Telefunken ▼ Integrated Interface Circuits ULC Technology: High-performance gate array package using dual metal layer CMOS technology, featuring sub-micron channel length 0.8 |xm Description The TOIM3232 1C provides proper pulse shaping for

irfs630a

Abstract: L65A
Contextual Info: IRFS630A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ I BVdss = 200 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 MA Max @ VM = 200V

9C1S

Contextual Info: SSW/Ï5N80A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 800V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 MA Max. @ VM = 800V

Contextual Info: ERFW/I640A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BV dss = 200 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 MA Max @ VM = 200V