VK200 FERRITE Search Results

TB172

Abstract: FERROXCUBE VK200 vk200 VK200 ferrite choke stackpole 57-1845-24b vk200 rf choke Stackpole 57-9074 Stackpole ferrite Toroid 57-9322 57-1845-24b
Contextual Info: RF input 50Ω L1, L2: Ferroxcube VK200 19/4B ferrite choke 56pF T1 9:1 100Ω 1/4W 10nF 5600pF 470pF 5600pF 10nF 1KΩ POT L3, L4: 6 ferrite beads each Ferroxcube 56 590 65/3B Gen Pur Diode T1: Ferrite core Stackpole 57-1845-24B T2: 7 turns of twisted pair AWG #20, Ferrite core Stackpole 57-9322

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD •

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF148 The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD

175mhz

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field-Effect T ransistor N-Channel Enhancement-Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD •

MRF148A

Abstract: mica ssb 2204B J101 VK200 RF TRANSFORMER 2 UH Unelco j101 D1130 UNELCO MICA CAPACITORS DIODE D11 ZENER
Contextual Info: Order this document by MRF148/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MRF148A Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz.

RF TRANSFORMER 2 UH

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MRF148A Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD

ferroxcube for ferrite beads 56-590-65

Abstract: VK200 ferrite inductor vk200 VK200 rfc 2N5944 VK200 ferroxcube for ferrite beads THOMSON-CSF electrolytic VK200 INDUCTOR 565-9065
Contextual Info: S G S-THOMSON O M C D I 712=1237 Q Q Q O D I l 3 | . SOLID STATE MICROWAVE 2N5944 ; THOMSON-CSF COMPONENTS CORPORATION _ [ Montgomery ville, PA 1 8 9 36 « 215 362:8500 * TWX 510-661-7299 _j UHF COMMUNICATIONS TRANSISTOR DESCRIPTION SSM device type 2N5944 is a 12.5 volt epitaxial silicon NPN planar

vk200 choke

Abstract: arco 465 UNELCO MICA CAPACITORS VK200-4B arco capacitors 262 k 246 transistor fet VK200 FERRITE 2204B J101 MRF140
Contextual Info: MOTOROLA Order this document by MRF140/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF140 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics

mrf150

Contextual Info: MOTOROLA Order this document by MRF150/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF150 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics

VK200-20

Abstract: VK200-20/4B MRF148 "RF MOSFET" UNELCO UNELCO MICA CAPACITORS VK200 20/4B vk200 choke VK200 FERRITE rf mosfet power amplifier
Contextual Info: MOTOROLA Order this document by MRF148/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF148 N–Channel Enhancement–Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz.

MRFC572

Abstract: MRF572 MRF671 vk200* FERROXCUBE MRF571
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF571 MRF572 MRFC572 The RF Line NPN SILICON HIGH FREQUENCY TRANSISTORS . . . designed for low-noise, w ide dynamic range front end am­ plifiers, low noise VCO's, and microwave power multipliers. • Low Noise • High Gain

MRF148A

Abstract: 2204B J101 VK200 Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF148A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF148A N–Channel Enhancement–Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz.

Contextual Info: MOTOROLA Order this document by MRF140/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF140 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics

Contextual Info: <£e.mi-dond\jLcko\ Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 The RF MOSFET Line RF Power Field-Effect Transistor MRF148 N-Channel Enhancement-Mode Designed for power amplifier applications in industrial, commercial and

MRF138

Contextual Info: MOTOROLA Order this document by MRF138/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF138 N–Channel Enhancement–Mode . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz.

Nippon capacitors

Contextual Info: MOTOROLA O rder this docum ent by M RF148/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power F ield -E ffect Transistor MRF148 N-Channel Enhancement-Mode D esigned for pow er am plifier applications in industrial, com m ercial and amateur radio equipm ent to 175 MHz.

MOTOROLA circuit for mrf150

Abstract: motorola MRF150 mrf150 equivalent arco capacitors choke vk200 vk200 choke MRF150 "RF MOSFET" VK200-4B 2204B
Contextual Info: MOTOROLA Order this document by MRF150/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF150 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics

vk200

Abstract: MRF148A D913 nippon ferrite ZENER A23 UNELCO MICA CAPACITORS vk200 choke VK200 FERRITE zener motorola 2204B
Contextual Info: MOTOROLA Order this document by MRF148A/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistor MRF148A N–Channel Enhancement–Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD

mrf455

Abstract: Motorola transistors MRF455 TRANSISTOR mrf455 MRF455 APPLICATION NOTES equivalent transistor rf "30 mhz" beads ferroxcube ferroxcube ferrite beads MRF455 motorola vk200 VK200 FERRITE
Contextual Info: MOTOROLA Order this document by MRF455/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF455 . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics —

j130 fet

Abstract: MRF27SG
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Pow er F ield -E ffect Transistor MRF275G N-Channel Enhancement-Mode Designed primarily for wideband large-signal output and driver stages from 100 - 500 MHz. 150 W, 28 V, 500 MHz N-CHANNEL MOS BROADBAND

VK200 FERRITE

Abstract: VK200-20/4B vk200 vk200 ferrite bead MRF313 RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ vk200-20 FERROXCUBE VK200 CASE 305A-01 vk200* FERROXCUBE
Contextual Info: Order this document by MRF313/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF313 . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • Specified 28 Volt, 400 MHz Characteristics —

motorola AN211A

Abstract: 42256 planar transformer theory
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Pow er F ield -E ffect Transistor MRF275G N-Channel Enhancement-Mode Designed primarily for wideband large-signal output and driver stages from 100 - 500 MHz. • Guaranteed Performance @ 500 MHz, 28 Vdc

MRF1946 equivalent

Abstract: J043 ic VK200 r.f choke
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Power Transistors MRF1946 MRF1946A . . . designed for 12.5 volt larg e-sig nal power am plifiers in com m ercial and industrial equipment. • High Common Emitter Power Gain • Specified 12.5 V, 175 MHz Performance

ferroxcube 56-590-65

Abstract: ferroxcube ferrite beads transistor 2439 MRF454 FERROXCUBE VK200 vk200 VK200 FERRITE VK200-20/4B vk200-20 1817pF
Contextual Info: Order this document by MRF454/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF454 Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics —