VK 739 Search Results

DTMF encoder

Abstract: transistors BC 458 DTMF decoder GOERTZEL ALGORITHM SOURCE CODE transistor m 9587 BC 458 transistor BC 458 dtmf principle DTMF Tone Decoder goertzel
Contextual Info: DTMF Tone Generation and Detection An Implementation Using the TMS320C54x Application Report 1997 Digital Signal Processing Solutions Printed in U.S.A., June 1997 SPRA096 DTMF Tone Generation and Detection An Implementation Using the TMS320C54x SPRA096 June 1997

GOERTZEL ALGORITHM SOURCE CODE for dtmf in c

Abstract: SPRA096 DTMF encoder mathcad AR51A DTMF Tone Decoder GOERTZEL ALGORITHM SOURCE CODE TR-TSY-000763 82263 D-10
Contextual Info: DTMF Tone Generation and Detection An Implementation Using the TMS320C54x Application Report 1997 Digital Signal Processing Solutions Printed in U.S.A., June 1997 SPRA096 DTMF Tone Generation and Detection An Implementation Using the TMS320C54x SPRA096 June 1997

DTMF encoder

Abstract: GOERTZEL ALGORITHM SOURCE CODE for dtmf in c DTMF Tone Decoder GOERTZEL ALGORITHM SOURCE CODE CM7291 D-10 TMS320 of DTMF Proximity Detector
Contextual Info: DTMF Tone Generation and Detection An Implementation Using the TMS320C54x Application Report 1997 Digital Signal Processing Solutions Printed in U.S.A., June 1997 SPRA096 DTMF Tone Generation and Detection An Implementation Using the TMS320C54x SPRA096 June 1997

TO3 package RthJC

Contextual Info: / = 7 ^ 7# S G S -T H O M S O N [* ^ ô m [iO T « S B U X 4 7 /V 4 7 /V 4 7 FI B U X 4 7 A /V 4 7 A /4 7 A F I HIGH VOLTAGE POWER SWITCH D E S C R IP T IO N The BUX47/A, BUV47/A, BUV47FI/AFI are silicon multiepitaxial mesa NPN transistors mounted res­

6SQ7

Abstract: UD DIODE ld 5172
Contextual Info: VEB WERK FÜR FERNMELDEWESEN 6SQ7 DUODIODE-TRIODE ~ T Kolbenabm essungen TECHNISCHE DATEN Heizung: H eizspannung 6,3 V H e izstro m 300 mA Betriebswerte für den Triodenteil: An o denspan nung U G itte rv o rs p a n n u n g A n o d e n stro m S te ilh e it

service-mitteilungen

Abstract: Ziphona funkschau VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN servicemitteilungen Zittau Scans-048 color antenne Mitteilungen Sonneberg
Contextual Info: SERVICE-MITTEILUNGEN VEB IN D U S T R IE V E R T R IE B R U N D F U N K U N D FE R N S E H E N iR jie ri 1r a d i o -teievision 1 SEITE NOVEMBER 19 7 6 11 01-10 Radio-Phono-Kombinationen schienen umgekehrt proportional zur Entwicklung von Bausteinanlagen aus der Mode gekommen zu sein.

TFK 404

Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Contextual Info: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317

Contextual Info: SG2172/3172 SILICON GENERAL ADVANCED DATA SHEET 3 AMP POWER OP AMP LINEAR IN TEGR ATED C IRCUITS DESCRIPTION FEATURES The SG2172/3172 is a power monolithic operational amplifier capable of operating with loads to 3A with a power supply range to 18V. Thermal

Contextual Info: P54/74FCT640T/AT/CT—P54/74FCT643T/AT/CT OCTAL BIDIRECTIONAL TRANSCEIVERS WITH 3-STATE OUTPUTS FEATURES • Function, Pinout and Drive Compatible with the FCT and F Logic Power-off disable feature Matched Rise and Fall times ■ FCT-C speed at 4.4ns max. Com'l

Microchip vk 1103

Contextual Info: fiW l e « « . 27LV128 M Ie r o o h Ip 128K 16K X 8 Low Voltage CMOS EPROM FEATURES DESCRIPTION • Wide voltage rang« 3.0V to 5.5V • High speed performance — 200ns Maximum access time at 3.0V • CMOS Technology for low power consumption — 8mA active current at 3.0V

SG3172P

Abstract: L165 equivalent L165 op amp lm675 amplifier uln3751 vk 739 lm675 servo motor ULN3751 L165 operational amplifier l165
Contextual Info: SG2172/3172 5ILID 3N ADVANCED DATA SHEET GENERAL 3 AMP POWER OP AMP LINEAR INTEG RATED C IR C U ITS DESCRIPTION FEATURES The S G 2 1 72/3172 is a pow e r m o nolithic operational a m plifier capable of operating w ith loads to 3A w ith a pow e r supply range to 18V. Therm al

Contextual Info: For Im eiiaft M i m e , Coniaci Your Local Salesperson REF101 Precision VOLTAGE REFERENCE FEATURES APPLICATIONS • • • • • • PRECISION CALIBRATED VOLTAGE STANDARD +10.00V OUTPUT HIGH ACCURACY: ±0.005V VERY LOW DRIFT: 1ppm/°C max EXCELLENT STABILITY: 50ppm/1000hrs

MAGNETICA

Abstract: smd diode t8 Schottky electronic ballast for tube light 36 ELECTRONIC BALLAST 4 T8 SCHEMATIC 1N414 diode L6585 1n4007 sod123 1N4007 SOD80C package t8 ballast circuits ELECTRONIC BALLAST 2 LAMP SCHEMATIC
Contextual Info: AN3032 Application note STEVAL-ILB007V1, 2 x 58 W/T8 ballast based on the L6585DE suitable for 2 x 36 W/T8 lamp Introduction This application note describes a demonstration board able to drive 2 x 58 W linear T8 fluorescent tubes. The last section of the document describes the changes that need to be

F-91300

Abstract: 9010 eprom f91300
Contextual Info: fiW l e « « . 27LV128 MIeroohIp 128K 16K X8 Low Voltage CMOS EPROM FEATURES DESCRIPTION • Wide voltage rang« 3.0V to 5.5V • High speed performance —200ns Maximum access time at 3.0V • CMOS Technology for low power consumption — 8mA active current at 3.0V

Contextual Info: TOSHIBA T H M Y 2 5 N 1 1B70f75f80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY25N11B is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM808BFT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA THMY25E11B70f75f80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY25E11B is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of nine TC59SM808BFT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TO SH IBA THMY12E11B70f75f80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY12E11B is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 5 TC59SM816BFT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TO SH IBA THMY12N11B70f75f80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY12N11B is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM816BFT DRAMs and an unbuffer on a printed circuit board.

THMY6440A1AEG10

Abstract: M8A010 D036
Contextual Info: T O S H IB A TH M Y 6440A 1A EG -10,-12A,-12 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 4,194,304 W O R D S x 64 BITS SY N CH RO N O U S D R A M M O D U LE DESCRIPTION The THMY6440A1AEG is a 4,194,304 words by 64 bits Synchronous DRAM module which assembled

TC59SM808BFT

Abstract: THMY25E11B70 49BH
Contextual Info: T O S H IB A THMY25E11B70f75f80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY25E11B is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of nine TC59SM808BFT DRAMs and an unbuffer on a printed circuit board.

S9157

Contextual Info: TOSH IBA THMY7232G1EG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS D RAM MODULE DESCRIPTION The THMY7232G1EG is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM708FT DRAMs and an unbuffer on a printed circuit board.

THMY25N11C70

Abstract: 45 M 7.5 B
Contextual Info: T O S H IB A TH M Y25N 11C70f75f80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY25N11C is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM808CFT DRAMs and an unbuffer on a printed circuit board.

TC59SM808BFT

Abstract: THMY25E11B70
Contextual Info: T O S H IB A THMY25E11B70f75f80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY25E11B is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of nine TC59SM808BFT DRAMs and an unbuffer on a printed circuit board.

45 M 7.5 B

Abstract: TC59SM808BFT THMY25N11B70
Contextual Info: TO SH IBA THMY25N11B70f75f80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY25N11B is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM808BFT DRAMs and an unbuffer on a printed circuit board.