VITRONICS SMD Search Results

smc diode

Contextual Info: SOLDER STENCIL GUIDELINES pattern of the opening in the stencil for the drain pad is not critical as long as it allows approximately 50% of the pad to be covered with paste. Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads.

Contextual Info: MSD1328-RT1, MSD1328-ST1 Preferred Device NPN Low Voltage Output Amplifiers - Surface Mount http://onsemi.com MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector−Base Voltage V(BR)CBO 25 Vdc Collector−Emitter Voltage V(BR)CEO 20 Vdc Emitter−Base Voltage

SMD310

Contextual Info: MSD602-RT1 Preferred Device NPN General Purpose Amplifier Transistor Surface Mount http://onsemi.com MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector−Base Voltage V(BR)CBO 60 Vdc Collector−Emitter Voltage V(BR)CEO 50 Vdc Emitter−Base Voltage

SMD310

Contextual Info: MSB709-RT1 Preferred Device PNP General Purpose Amplifier Transistor Surface Mount http://onsemi.com MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO −60 Vdc Collector−Emitter Voltage V(BR)CEO −45 Vdc Emitter−Base Voltage

Contextual Info: INFORMATION FOR USING SURFACE MOUNT THYRISTORS MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection

bt1 marking

Abstract: SMD310
Contextual Info: MSC2295-BT1, MSC2295-CT1 Preferred Device NPN RF Amplifier Transistors Surface Mount http://onsemi.com MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector−Base Voltage V(BR)CBO 30 Vdc Collector−Emitter Voltage V(BR)CEO 20 Vdc Emitter−Base Voltage

SMD310

Contextual Info: MSD601-RT1, MSD601-ST1 Preferred Device NPN General Purpose Amplifier Transistors Surface Mount http://onsemi.com MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO 60 Vdc Collector−Emitter Voltage V(BR)CEO 50 Vdc Emitter−Base Voltage

Contextual Info: M1MA151KT1, M1MA152KT1 Preferred Device Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−59 package which is designed for low power surface mount

Contextual Info: MSA1162GT1, MSA1162YT1 General Purpose Amplifier Transistors PNP Surface Mount • Moisture Sensitivity Level: 1 • ESD Rating: TBD http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO 60 Vdc

Contextual Info: M1MA151AT1, M1MA152AT1 Preferred Device Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−59 package which is designed for low power surface mount

Contextual Info: ON Semiconductort MMBV3700LT1 MPN3700 High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general−purpose switching circuits. They are supplied in a cost−effective plastic package for

500D

Abstract: LR7189 litton CONNECTOR
Contextual Info: Application Specification AMPMODU* 114-25018 Mod II and Mod IV Printed Circuit Board Connectors NOTE i 19 MAY 08 Rev E All numerical values are in metric units [with U.S. customary units in brackets]. Dimensions are in millimeters. Unless otherwise specified, dimensions have a tolerance of +0.13 and angles have a tolerance of +2 . Figures and

Contextual Info: ON Semiconductort Dual Schottky Barrier Diode MMBD352WT1 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. 3 • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts

Alpha 611 RMA

Abstract: EIA-700-AAAB robotic vacuum cleaner circuit robotic vacuum cleaner EIA-700 AAAB EIA-364-52 vitronics smd EIA-700AAAB
Contextual Info: Application Specification 1.0 mm Free Height FH Plug and Receptacle Connectors Using Surface Mount Technology (SMT) NOTE i 114-25045 19 DEC 08 Rev C All numerical values are in metric units [with U.S. customary units in brackets]. Dimensions are in millimeters [and

Contextual Info: MSC2712GT1, MSC2712YT1 General Purpose Amplifier Transistor NPN Surface Mount • Moisture Sensitivity Level: 1 • ESD Rating: TBD http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO 60 Vdc

motorola 820

Contextual Info: MOTOROLA Order this document by MMSD914T1/D SEMICONDUCTOR TECHNICAL DATA MMSD914T1 Motorola Preferred Device Switching Diode This switching diode has the following features: • SOD-123 Surface Mount Package • High Breakdown Voltage • Fast Speed Switching Time

Contextual Info: BAT54SWT1 Preferred Device Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

Contextual Info: ON Semiconductort MMBD717LT1 Common Anode Schottky Barrier Diodes ON Semiconductor Preferred Device These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

DIODE M4A

Abstract: M4A sot23
Contextual Info: ON Semiconductort MMBV109LT1, MV209 Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid−state reliability in replacement of mechanical tuning methods. • High Q with Guaranteed Minimum Values at VHF Frequencies

Contextual Info: PZTA96ST1 Preferred Device High Voltage Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO −450 Vdc Collector−Base Voltage VCBO −450 Vdc Emitter−Base Voltage VEBO −5.0 Vdc Collector Current IC −500

motorola M1MA151W

Contextual Info: MOTOROLA Order this document by M1MA151WKT1/D SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diodes M1MA151WKT1 M1MA152WKT1 These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59

Contextual Info: BAW56TT1 Preferred Device Dual Switching Diode MAXIMUM RATINGS TA = 25°C Rating http://onsemi.com Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit 225 mW 1.8 mW/°C 555 °C/W 360 mW 2.9 mW/°C Peak Forward Surge Current

Contextual Info: ON Semiconductort MMBV3102LT1 Silicon Tuning Diode ON Semiconductor Preferred Device This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid−state reliability in replacement of mechanical tuning methods.

Contextual Info: M1MA174T1 Preferred Device Silicon Switching Diode MAXIMUM RATINGS Symbol Value Unit Continuous Reverse Voltage Rating VR 100 V Recurrent Peak Forward Current IF 200 mA IFM surge 500 mA Total Power Dissipation, One Diode Loaded TA = 25°C Derate above 25°C