VISHAY STANDARD IC MARKING Search Results
VISHAY STANDARD IC MARKING Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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DE6B3KJ101KA4BE01J | Murata Manufacturing Co Ltd | Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive | |||
DE6B3KJ331KB4BE01J | Murata Manufacturing Co Ltd | Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive | |||
DE6E3KJ102MN4A | Murata Manufacturing Co Ltd | Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive | |||
DE6E3KJ472MA4B | Murata Manufacturing Co Ltd | Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive | |||
DE6B3KJ331KA4BE01J | Murata Manufacturing Co Ltd | Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive |
VISHAY STANDARD IC MARKING Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Model IM-10RFCM-13 VISHAY Vishay Dale Inductors Commercial, Molded FEATURES • Inductance range is 1pH to 2200pH. • Proven reliability molded inductors. ELECTRICAL SPECIFICATIONS STANDARD ELEC T R IC A L SPECIFICATION S IND. M O D E L* ,UH TO L. Q MIN. |
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IM-10RFCM-13 2200pH. IM-10RFCM-13 | |
Contextual Info: Model 100 VISHAY Vishay Spectrol 1 - 5/16” 33.3mm Single Turn Wirewound F recision Potentiometer FEA TU RES • 1 - 5/16” Round • Bushing or Servo • 5 to 20K E LE C T R IC A L SPECIFICATION! > PARAMETER STANDARD 5 to 20K ±3% ±5% Total Resistance: |
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MIL-R-12934) 20-Nov-01 | |
Contextual Info: SiC779 Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION FEATURES The SiC779 is an integrated solution that contains PWM optimized n-channel MOSFETs high side and low side and a full featured MOSFET driver IC. The device complies with the Intel DrMOS standard for desktop and server Vcore power |
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SiC779 SiC779 11-Mar-11 | |
Contextual Info: SiC769ACD Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION FEATURES The SiC769ACD is an integrated solution that contains PWM optimized n-channel MOSFETs high side and low side and a full featured MOSFET driver IC. The device complies with the Intel DrMOS standard for desktop and server Vcore power |
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SiC769ACD 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
S10011
Abstract: drMOS compatible
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SiC769ACD 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S10011 drMOS compatible | |
Contextual Info: SiC779 Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION FEATURES The SiC779 is an integrated solution that contains PWM optimized n-channel MOSFETs high side and low side and a full featured MOSFET driver IC. The device complies with the Intel DrMOS standard for desktop and server Vcore power |
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SiC779 SiC779 11-Mar-11 | |
Benchmark MOSFETsContextual Info: SiC779 Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION FEATURES The SiC779 is an integrated solution that contains PWM optimized n-channel MOSFETs high side and low side and a full featured MOSFET driver IC. The device complies with the Intel DrMOS standard for desktop and server Vcore power |
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SiC779 SiC779 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Benchmark MOSFETs | |
Contextual Info: SiC779 Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION FEATURES The SiC779 is an integrated solution that contains PWM optimized n-channel MOSFETs high side and low side and a full featured MOSFET driver IC. The device complies with the Intel DrMOS standard for desktop and server Vcore power |
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SiC779 SiC779 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiC779 Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION FEATURES The SiC779 is an integrated solution that contains PWM optimized n-channel MOSFETs high side and low side and a full featured MOSFET driver IC. The device complies with the Intel DrMOS standard for desktop and server Vcore power |
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SiC779 SiC779 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
100C
Abstract: MLP66-40 MOSFET Device Effects on Phase Node Ringing in VR SiC76 SiC769ACD
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SiC769ACD 18-Jul-08 100C MLP66-40 MOSFET Device Effects on Phase Node Ringing in VR SiC76 | |
Contextual Info: SiC779 Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION FEATURES The SiC779 is an integrated solution that contains PWM optimized n-channel MOSFETs high side and low side and a full featured MOSFET driver IC. The device complies with the Intel DrMOS standard for desktop and server Vcore power |
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SiC779 SiC779 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SiC76Contextual Info: SiC769ACD Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION FEATURES The SiC769ACD is an integrated solution that contains PWM optimized n-channel MOSFETs high side and low side and a full featured MOSFET driver IC. The device complies with the Intel DrMOS standard for desktop and server Vcore power |
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SiC769ACD 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SiC76 | |
MLP66-40Contextual Info: SiC769ACD Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION FEATURES The SiC769ACD is an integrated solution that contains PWM optimized n-channel MOSFETs high side and low side and a full featured MOSFET driver IC. The device complies with the Intel DrMOS standard for desktop and server Vcore power |
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SiC769ACD 11-Mar-11 MLP66-40 | |
Contextual Info: MODEL T7R Cermet Trimmers î î ’+'î î;? VISHAY Y 1/4" [6.35mm] Round, Single Turn, Sealed, Industrial Grade FEATURES • 3 standard terminal styles • Fully sealed to withstand board washing • Top and side adjustment ELEC TR IC A L S P E C IFIC A TIO N S |
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MIL-STD-202, 100PPM/Â | |
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5-221 dale
Abstract: CMF55 wattage rating
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CMF-50 CMF-50, CMF-55, CMF-60, CMF-65, 5-221 dale CMF55 wattage rating | |
Contextual Info: IMC-1210-100 VISHAY Vishay Dale Surface Mount, Molded Inductor FEATURES • Molded construction provides superior strength and moisture resistance. • Tape and reel packaging for automatic handling, 2000/reel, EIA481. • Printed marking. • Compatible with vapor phase and infrared reflow soldering. |
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IMC-1210-100 2000/reel, EIA481. IMC-1210-100 28-Aug-02 | |
Contextual Info: MODELS ST-22 and ST-23 Chip Trimmers Surface Mount, .157" [4.0mm] Square Single Turn, Open Frame FEATURES • Designed for efficient, accurate miniaturization. • Can be wave or dip soldered without rotor problems. • Coded marking for easy identification of resistance value. |
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ST-22 ST-23 250PPM/ | |
Contextual Info: IM C-1210 Vishay Dale VISHAY Surface Mount, Molded Inductor FEATURES • Printed marking. • Compatible with vapor phase and infrared reflow soldering. • Molded construction provides superior strength and moisture resistance. • Tape and reel packaging for autom atic handling, 2000/ |
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C-1210 IMC-1210 10-Sep-02 | |
Contextual Info: GA200HS60S1PbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Very low conduction losses • Industry standard package |
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GA200HS60S1PbF E78996 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
GA100TS60SF
Abstract: GA100TS60SFPbF
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GA100TS60SFPbF E78996 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 GA100TS60SF GA100TS60SFPbF | |
GA100TS60SFPbFContextual Info: GA100TS60SFPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 100 A FEATURES • Standard speed PT IGBT technology • Standard speed: DC to 1 kHz, optimized for hard switching speed • FRED Pt antiparallel diodes with fast recovery |
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GA100TS60SFPbF E78996 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 GA100TS60SFPbF | |
GA100TS60SFPbFContextual Info: GA100TS60SFPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 100 A FEATURES • Standard speed PT IGBT technology • Standard speed: DC to 1 kHz, optimized for hard switching speed • FRED Pt antiparallel diodes with fast recovery |
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GA100TS60SFPbF E78996 2002/95/EC 11-Mar-11 GA100TS60SFPbF | |
Contextual Info: GA400TD60S Vishay Semiconductors Dual INT-A-PAK Low Profile "Half-Bridge" Standard Speed IGBT , 400 A FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Low VCE(on) • Square RBSOA • HEXFRED antiparallel diode with ultrasoft reverse |
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GA400TD60S E78996 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
GA400TD60SContextual Info: GA400TD60S Vishay Semiconductors Dual INT-A-PAK Low Profile "Half-Bridge" Standard Speed IGBT , 400 A FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Low VCE(on) • Square RBSOA • HEXFRED antiparallel diode with ultrasoft reverse |
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GA400TD60S E78996 2002/95/EC 11-Mar-11 GA400TD60S |