VISHAY MARKING MOSFET Search Results
VISHAY MARKING MOSFET Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| ICL7667MJA/883B |
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ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA) |
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| MG80C186-10/BZA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |
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| ICM7555MTV/883 |
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ICM7555MTV/883 - Dual marked (5962-8950303GA) |
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| MQ80C186-10/BYA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101YA) |
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| 54121/BCA |
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54121 - Multivibrator, Monostable - Dual marked (M38510/01201BCA) |
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VISHAY MARKING MOSFET Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
vishay siliconix code markingContextual Info: _ Sii 301 DL Vishay Siliconix New Product P-Channel 20-V D-S MOSFET PRODUCT SUMMARY r DS(on) (£2) lD (mA) 3.8 e VGS = -4.5 V -180 5.0 9 VGs = -2 5 V -100 V DS(V) -20 Marking Code r LG XX £ Lot Traceability and Date Code |
OCR Scan |
S-01830-- 21-Aug-00 S-01830--Rev. vishay siliconix code marking | |
A96V
Abstract: Si2326DS
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Original |
Si2326DS O-236 OT-23) S-2381--Rev. 23-Oct-00 A96V | |
Si2320DSContextual Info: Si2320DS New Product Vishay Siliconix N-Channel 200-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 200 7 @ VGS = 10 V "0.28 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2320DS (D0)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) |
Original |
Si2320DS O-236 OT-23) S-63640--Rev. 01-Nov | |
A96V
Abstract: Si2328DS SI2328ds rev
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Original |
Si2328DS O-236 OT-23) S-05372--Rev. 25-Dec-01 A96V SI2328ds rev | |
Si2309DS
Abstract: Si2309DS-T1 7083
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Original |
Si2309DS O-236 OT-23) Si2309DS-T1 Si2309DS-T1-E3 08-Apr-05 7083 | |
SI5435BDC
Abstract: Si5435BDC-T1
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Original |
Si5435BDC Si5435BDC-T1--E3 18-Jul-08 Si5435BDC-T1 | |
TP0610K-T1-E
Abstract: TP0610K-T1-E3
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Original |
TP0610K O-236 OT-23) TP0610K 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TP0610K-T1-E TP0610K-T1-E3 | |
Si1301DLContextual Info: Si1301DL New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V –100 SOT-323 SC-70 (3-Leads) 1 LG 3 S XX YY Marking Code G Lot Traceability and Date Code |
Original |
Si1301DL OT-323 SC-70 S-01830--Rev. 21-Aug-00 | |
diode marking L5 sot363
Abstract: VISHAY diode MARKING er VISHAY SOT LOT CODE marking L5 sot363 sot363 ON Marking DS vishay siliconix code marking
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OCR Scan |
SM906DL OT-363 S-01885-- 28-Aug-00 S11906DL diode marking L5 sot363 VISHAY diode MARKING er VISHAY SOT LOT CODE marking L5 sot363 sot363 ON Marking DS vishay siliconix code marking | |
Si1305DL
Abstract: ams330
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Original |
Si1305EDL OT-323 SC-70 18-Jul-08 Si1305DL ams330 | |
P-Channel 1.8-V (G-S) MOSFET sot-323
Abstract: Si1307EDL Si1307DL
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Original |
Si1307EDL OT-323 SC-70 08-Apr-05 P-Channel 1.8-V (G-S) MOSFET sot-323 Si1307DL | |
Si1303DL
Abstract: S-63639
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Original |
Si1303DL OT-323 SC-70 S-63639--Rev. 08-Nov-99 S-63639 | |
Si1305DL
Abstract: Tr431
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Original |
Si1305EDL OT-323 SC-70 08-Apr-05 Si1305DL Tr431 | |
7130-1
Abstract: vishay siliconix code marking
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OCR Scan |
1300PL S-01883-- 28-Aug-00 1300DL S-01883--Rev. 7130-1 vishay siliconix code marking | |
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Si5475DC
Abstract: S0233
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Original |
Si5475DC S-02332--Rev. 23-Oct-00 S0233 | |
Si5435DC
Abstract: Si5435DC-T1
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Original |
Si5435DC Si5435DC-T1 S-21251--Rev. 05-Aug-02 | |
Si5443DCContextual Info: Si5443DC New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.065 @ VGS = –4.5 V "4.9 0.074 @ VGS = –3.6 V "4.6 0.110 @ VGS = –2.5 V "3.8 S 1206-8 ChipFET 1 D D G D D D D Marking Code G BB XX |
Original |
Si5443DC S-99362--Rev. 22-Nov-99 | |
250KL
Abstract: 40244 BS250KL TP0610KL TO-92-18RM S402 0610K
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Original |
TP0610KL/BS250KL 0610KL TP0610KL-TR1 O-92-18RM O-226AA 08-Apr-05 250KL 40244 BS250KL TP0610KL TO-92-18RM S402 0610K | |
Si5465EDC
Abstract: siliconix
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Original |
Si5465EDC S-03912--Rev. 21-May-01 siliconix | |
Si5475DC
Abstract: Si5475DC-T1
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Original |
Si5475DC Si5475DC-T1 S-21251--Rev. 05-Aug-02 | |
diode MARKING CODE A9
Abstract: Si2309DS
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Original |
Si2309DS O-236 OT-23) S-60573--Rev. 30-Nov-98 diode MARKING CODE A9 | |
Si5905DC
Abstract: Si5905DC-T1 MARKING CODE DB
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Original |
Si5905DC Si5905DC-T1 S-21251--Rev. 05-Aug-02 MARKING CODE DB | |
Si2305DSContextual Info: Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.052 @ VGS = –4.5 V "3.5 0.071 @ VGS = –2.5 V "3 0.108 @ VGS = –1.8 V "2 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2305DS (A5)* *Marking Code |
Original |
Si2305DS O-236 OT-23) 08-Apr-05 | |
Si5904DCContextual Info: Si5904DC New Product Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V "4.2 0.134 @ VGS = 2.5 V "3.1 D1 1206-8 ChipFET D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CB XX Lot Traceability |
Original |
Si5904DC S-61855--Rev. 04-Oct-99 | |