VIAS Search Results

4235

Abstract: NN12 P35-4235-000-200
Contextual Info: P35-4235-000-200 GaAs MMIC SPST ABSORPTIVE SWITCH, DC - 20GHz Features • • • • • Broadband Low insertion loss 1.8dB typ at 18GHz Fast switching speed High isolation 50dB at 18GHz Through GaAs Vias for improved performance Description The P35-4235-000-200 is a high performance Gallium Arsenide monolithic single pole single throw broadband RF

Contextual Info: TGL4201 Wideband Fixed Attenuators Key Features and Performance 0 dB Attenuator • • • • • • • • 2 dB Attenuator Fixed 0, 2, 3, 6 and 10dB Attenators Broadband Response DC to > 40 GHz Excellent Return Loss > 15 dB Power Handling = 20 dBm On-Chip Grounding Vias

Contextual Info: FPDA200V Preliminary Data Sheet HIGH PERFORMANCE PHEMT WITH SOURCE VIAS • FEATURES ♦ 21 dBm Output Power at 1-dB Compression at 18 GHz ♦ 12.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency ♦ Source Vias to Backside Metallization GATE BOND PAD

Contextual Info: AT C H I G H P O W E R R E S I S T I V E P R O D U C T S Via Hole Calculations for Surface Mount Resistors and Terminations Chip Type CZ Size LXW 0.200 ϫ 0.250 ϫ 0.375 ϫ 0.375 ϫ 0.100 0.250 0.250 0.375 Rated Power of Chip (Watts) Number of Vias 10 20

8mm pitch BGA 256 pin 14x14

Abstract: CB45000 CB55000 D950 ST10 ST100 ST20 CMOS GATE ARRAY BGA stmicroelectronics of BGA Staggered pins bga 10x10
Contextual Info: CB55000 Series HCMOS7 Standard Cells FEATURE • 0.25 micron drawn 0.20 micron effective channel length process , six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided active areas and gates. Deep UV

MC1630

Abstract: PL-349
Contextual Info: Microwave Precision Fixed Attenuator 50Ω Up to 2W YAT-SERIES DC to 18 GHz The Big Deal • Exceptional Power Handling, Up to 2W • Wide bandwidth, DC - 18 GHz • Small Size, 2 mm x 2 mm CASE STYLE: MC1630 Product Overview YAT attenuators ROHS compliant are fixed value, absorptive attenuators fabricated using highly repetitive MMIC processing including thin film resistors on GaAs substrates. YAT attenuator die contain throughwafer Cu metallization vias to realize low thermal resistance and wideband operation. YATs are available

YAT-6

Contextual Info: Microwave Precision Fixed Attenuator 50Ω Up to 2W YAT-SERIES DC to 18 GHz The Big Deal • Exceptional Power Handling, Up to 2W • Wide bandwidth, DC - 18 GHz • Small Size, 2 mm x 2 mm CASE STYLE: MC1630 Product Overview YAT attenuators ROHS compliant are fixed value, absorptive attenuators fabricated using highly repetitive MMIC processing including thin film resistors on GaAs substrates. YAT attenuator die contain throughwafer Cu metallization vias to realize low thermal resistance and wideband operation. YATs are available

lb006

Contextual Info: INTERNAL MEMO To: All FAEs From: John Seago Subject: LB006 – The 8 Pin SOT-23 Lab Board Date: 11/19/02 Hi Guy, This lab board was designed to work with the 8 pin SOT-23 package. It is a four-layer board that provides access to inner layers by solder-shorting vias to exposed copper on

TC2030-MCP

Abstract: Tag-Connect
Contextual Info: FOOTPRINT FOR TC2030-MCP PLUG-OF-NAILS TM CABLE ZONE REV 12/2/10 TC2030-MCP-FP MS 1. Allow clearance for finger squeeze access from the two sides shown. Allow finger access from this side 2. No tracks or vias in the shaded "KEEP OUT" AREA. .200 " 5.080 mm

r04350

Contextual Info: AMMP-6630 5 – 30 GHz Variable Attenuator Data Sheet Description Features The AMMP-6630 MMIC is a monolithic, voltage variable, GaAs IC attenuator that operates from 5-30 GHz. It is fabricated using Avago Technologies enhancement mode MMIC process with backside ground vias, and gate

transistor A114

Abstract: A114 A115 FPD1000V JESD22 A114 transistor
Contextual Info: PRELIMINARY • FEATURES 1.8 GHz ♦ 31 dBm Linear Output Power ♦ 16 dB Power Gain ♦ Useable Gain to 10 GHz ♦ 41 dBm Output IP3 ♦ Maximum Stable Gain of 20 dB ♦ 50% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias 1W POWER PHEMT

0.25-um CMOS standard cell library inverter

Abstract: CMOS GATE ARRAY stmicroelectronics OLIVETTI
Contextual Info: CB55000 Series HCMOS7 Standard Cells FEATURES • ■ ■ ■ ■ ■ 0.25 micron drawn 0.20 micron effective channel length process , six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided

TLE4242G

Abstract: TLE4242 HV9910 ZXSC400 MLX10801 ZXSC310 J1850 infineon dragon 18w sot23 transistor sae 1010
Contextual Info: — g vvork of Driving High-Power LEDs By David Marsh. Supplement Editor. ED N Europe have about 1.25W if you need maxi­ away with conventional FR4 pc been available for a rela­ mum light output, which creates board, thermal vias, and lots of tively several

Contextual Info: AMMP-6630 5 – 30 GHz Variable Attenuator Data Sheet Description Features The AMMP-6630 MMIC is a monolithic, voltage variable, GaAs IC attenuator that operates from 5-30 GHz. It is fabricated using Avago Technologies enhancement mode MMIC process with backside ground vias, and gate

Contextual Info: FOOTPRINT FOR TC2030-IDC PLUG-OF-NAILS TM CABLE ZONE REV 5/17/11 TC2030-IDC-FP MS Notes: 1. Allow clearance for finger squeeze access from the two sides shown. Allow finger access from this side 2. No tracks or vias in the shaded "KEEP OUT" AREA. .200 "

Contextual Info: Microwave Precision Fixed Attenuator 50Ω Up to 2W YAT-SERIES DC to 18 GHz The Big Deal • Exceptional Power Handling, Up to 2W • Wide bandwidth, DC - 18 GHz • Small Size, 2 mm x 2 mm CASE STYLE: MC1630 Product Overview YAT attenuators ROHS compliant are fixed value, absorptive attenuators fabricated using highly repetitive MMIC processing including thin film resistors on GaAs substrates. YAT attenuator die contain throughwafer Cu metallization vias to realize low thermal resistance and wideband operation. YATs are available

Contextual Info: Microwave Precision Fixed Attenuator 50Ω Up to 2W YAT-SERIES DC to 18 GHz The Big Deal • Exceptional Power Handling, Up to 2W • Wide bandwidth, DC - 18 GHz • Small Size, 2 mm x 2 mm CASE STYLE: MC1630 Product Overview YAT attenuators ROHS compliant are fixed value, absorptive attenuators fabricated using highly repetitive MMIC processing including thin film resistors on GaAs substrates. YAT attenuator die contain throughwafer Cu metallization vias to realize low thermal resistance and wideband operation. YATs are available

MC1630

Contextual Info: Microwave Precision Fixed Attenuator 50Ω Up to 2W YAT-SERIES DC to 18 GHz The Big Deal • Exceptional Power Handling, Up to 2W • Wide bandwidth, DC - 18 GHz • Small Size, 2 mm x 2 mm CASE STYLE: MC1630 Product Overview YAT attenuators ROHS compliant are fixed value, absorptive attenuators fabricated using highly repetitive MMIC processing including thin film resistors on GaAs substrates. YAT attenuator die contain throughwafer Cu metallization vias to realize low thermal resistance and wideband operation. YATs are available

Contextual Info: Microwave Precision Fixed Attenuator 50Ω Up to 2W YAT-SERIES DC to 18 GHz The Big Deal • Exceptional Power Handling, Up to 2W • Wide bandwidth, DC - 18 GHz • Small Size, 2 mm x 2 mm CASE STYLE: MC1630 Product Overview YAT attenuators ROHS compliant are fixed value, absorptive attenuators fabricated using highly repetitive MMIC processing including thin film resistors on GaAs substrates. YAT attenuator die contain throughwafer Cu metallization vias to realize low thermal resistance and wideband operation. YATs are available

Contextual Info: Microwave Precision Fixed Attenuator 50Ω Up to 2W YAT-SERIES DC to 18 GHz The Big Deal • Exceptional Power Handling, Up to 2W • Wide bandwidth, DC - 18 GHz • Small Size, 2 mm x 2 mm CASE STYLE: MC1630 Product Overview YAT attenuators ROHS compliant are fixed value, absorptive attenuators fabricated using highly repetitive MMIC processing including thin film resistors on GaAs substrates. YAT attenuator die contain throughwafer Cu metallization vias to realize low thermal resistance and wideband operation. YATs are available

rf attenuator 349

Contextual Info: Microwave Precision Fixed Attenuator 50Ω Up to 2W YAT-SERIES DC to 18 GHz The Big Deal • Exceptional Power Handling, Up to 2W • Wide bandwidth, DC - 18 GHz • Small Size, 2 mm x 2 mm CASE STYLE: MC1630 Product Overview YAT attenuators ROHS compliant are fixed value, absorptive attenuators fabricated using highly repetitive MMIC processing including thin film resistors on GaAs substrates. YAT attenuator die contain throughwafer Cu metallization vias to realize low thermal resistance and wideband operation. YATs are available

A114

Abstract: A115 FPD4000V JESD22
Contextual Info: PRELIMINARY • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Linear Output Power ♦ 11 dB Power Gain ♦ Useable Gain to 9 GHz ♦ 47 dBm Output IP3 ♦ 19 dB Maximum Stable Gain ♦ 45% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias FPD4000V

Contextual Info: Patterned Substrate Products: Microwave Passive Components General Metalized Plates EFI offers a wide selection of metalization options, substrate materials, metalized-through holes and filled vias, all with rapid, high volume delivery for the customers who do their own patterning and etching.

Contextual Info: Balancing Electrical and Thermal Device Characteristics – Thru Wafer Vias vs. Backside Thermal Vias Cristian Cismaru, Hal Banbrook, Hong Shen and Peter J. Zampardi Skyworks Solutions, Inc., 2427 Hillcrest Drive, Newbury Park, CA 91320 cristian.cismaru@skyworksinc.com, 805.480.4663