VHF VCO LOW VOLTAGE Search Results

Contextual Info: RF2056 RF2056High Performance VHF/UHF PLL and VCO with Integrated Mixers HIGH PERFORMANCE VHF/UHF PLL AND VCO WITH INTEGRATED MIXERS Package: QFN, 32-Pin, 5mmx5mm VCO Features          Low Phase Noise VCO Charge pump VCO Range 200MHz to 500MHz

Contextual Info: VHF variable capacitance diode FEATURES • High linearity · Excellent matching to 2% DMA · Ultra small plastic SMD package · C25: 2.75 pF; ratio: 12 · Low series resistance. APPLICATIONS · Electronic tuning in VHF television tuners. · Voltage controlled oscillators VCO .

BB910

Abstract: BB910 TO-92S CD DIODE ST bb910 diode
Contextual Info: BB910 ST VHF VARIABLE CAPACITANCE DIODE FEATURES ˙ Excellent linearity ˙ Matched to 2.5% ˙ C28: 2.5; ratio: 16 ˙ Low series resistance. APPLICATIONS ˙ Electronic tuning in VHF television tuners, band B up to 460 MHz ˙ VCO. Absolute Maximum Ratings Ta = 25OC

Contextual Info: BB148WS VHF VARIABLE CAPACITANCE DIODE Features • Excellent linearity • Very small plastic SMD package • Low series resistance PINNING PIN DESCRIPTION 1 Cathode 2 Anode 2 1 TA Applications • Electronic tuning in VHF television tuners • VCO Absolute Maximum Ratings Ta = 25 OC

BB910

Abstract: CD DIODE ST BB910 TO-92S
Contextual Info: BB910 ST VHF VARIABLE CAPACITANCE DIODE FEATURES ․ Excellent linearity ․ Matched to 2.5% ․ C28: 2.5; ratio: 16 ․ Low series resistance. APPLICATIONS ․ Electronic tuning in VHF television tuners, band B up to 460 MHz ․ VCO. Absolute Maximum Ratings Ta = 25OC

BB910

Abstract: Bb910st CD DIODE ST bb910 diode
Contextual Info: BB910 ST VHF VARIABLE CAPACITANCE DIODE FEATURES ˙ Excellent linearity ˙ Matched to 2.5% ˙ C28: 2.5; ratio: 16 ˙ Low series resistance. APPLICATIONS ˙ Electronic tuning in VHF television tuners, band B up to 460 MHz ˙ VCO. Absolute Maximum Ratings Ta = 25OC

Marking Codes smd

Contextual Info: BB148WS VHF VARIABLE CAPACITANCE DIODE Features • Excellent linearity • Very small plastic SMD package • Low series resistance PINNING PIN DESCRIPTION 1 Cathode 2 Anode 2 1 TA Applications • Electronic tuning in VHF television tuners • VCO Absolute Maximum Ratings Ta = 25 OC

Contextual Info: 1SV304 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE VCO FOR VHF BAND RADIO • • • Small Package High Capacitance Ratio Low Series Resistance MAXIMUM KAliNbb = CHARACTERISTIC Reverse Voltage Junction Temperature C i i * . _ _

colpitts oscillator 400 MHz

Abstract: ASK 315MHZ ASK 434MHZ ld-sw prescaler 64 capacitor 220p SSOP-16 SSTX4915 TX4915 car alarm crystal transmitter
Contextual Info: SSTX4915 Preliminary Description The SSTX4915 is a low power ASK transmitter IC intended for applications in the North American and European VHF/UHF bands. The integrated voltage-controlled oscillator VCO , phase/frequency detector, prescaler, and reference oscillator require only the

Contextual Info: 1SV305 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 <;v 3 n s Unit in mm VCO FOR VHF BAND RADIO • • • Small Package High Capacitance Ratio Low Series Resistance MAXIMUM KAliNbb = CHARACTERISTIC Reverse Voltage Junction Temperature

Contextual Info: SEMICONDUCTOR KDV273UL TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. TENTATIVE FEATURES High Capacitance Ratio : C1V/C4V =2.0 Typ. Low Series Resistance : rs=0.39 (Typ.) C MAXIMUM RATING (Ta=25 CHARACTERISTIC

Contextual Info: MT3S110FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S110FS VCO OSCILLETOR STAGE VHF-UHF Low Noise Amplifier Application Low Noise Figure :NF=1.3dB @f=2GHz • High Gain:|S21e|2=9dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05

Contextual Info: MT3S109FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S109FS VCO OSCILLETOR STAGE VHF-UHF Low Noise Amplifier Application Low Noise Figure :NF=1.35dB @f=2GHz • High Gain:|S21e|2=8.2dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05

60GHz transistor

Abstract: 2-1E1A
Contextual Info: MT3S107FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S107FS VCO BUFFER STAGE VHF-SHF Low Noise Amplifier Application Low Noise Figure :NF=0.85dB @f=2GHz • High Gain:|S21e|2= 13dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05

vr 1K

Abstract: KDV273UL
Contextual Info: SEMICONDUCTOR KDV273UL TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. TENTATIVE FEATURES High Capacitance Ratio : C1V/C4V =2.0 Typ. Low Series Resistance : rs=0.39 (Typ.) C MAXIMUM RATING (Ta=25 CHARACTERISTIC

60GHz transistor

Abstract: MT3S106FS 60Ghz germanium transistors NPN
Contextual Info: MT3S106FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S106FS VCO OSCILLETOR STAGE VHF-UHF Low Noise Amplifier Application Low Noise Figure :NF=1.2dB @f=2GHz • High Gain:|S21e|2=10dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05

MT3S110FS

Contextual Info: MT3S110FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S110FS VCO OSCILLETOR STAGE VHF-UHF Low Noise Amplifier Application Low Noise Figure :NF=1.3dB @f=2GHz • High Gain:|S21e|2=9dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05

raltron

Contextual Info: Voltage Controlled Oscillator - VCO RQL-Series 1. FEATURES ! Frequency Range up to 1 GHz ! Super Compact SMT-Package: 7.6 x 7.6 [mm] ! Low Profile: 2.0 [mm] 2. APPLICATIONS ! Telecommunications ! UHF/VHF-Radio ! WLAN ! Point-to-Point Radio ! PCS ! GPS 3. MECHANICAL SPECIFICATION

Contextual Info: MT3S108FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S108FS VCO OSCILLETOR STAGE VHF-SHF Low Noise Amplifier Application Low Noise Figure :NF=0.9dB @f=2GHz • High Gain:|S21e|2=11.5dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05

Contextual Info: MT3S109FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S109FS VCO OSCILLETOR STAGE VHF-UHF Low Noise Amplifier Application Low Noise Figure :NF=1.35dB @f=2GHz • High Gain:|S21e|2=8.2dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05

60GHz transistor

Contextual Info: MT3S108FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S108FS VCO OSCILLETOR STAGE VHF-SHF Low Noise Amplifier Application Low Noise Figure :NF=0.9dB @f=2GHz • High Gain:|S21e|2=11.5dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05

Contextual Info: MT3S107FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S107FS VCO BUFFER STAGE VHF-SHF Low Noise Amplifier Application Low Noise Figure :NF=0.85dB @f=2GHz • High Gain:|S21e|2= 13dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05

VCO 1ghz

Abstract: TOSHIBA MICROWAVE AMPLIFIER MT3S105FS
Contextual Info: MT3S105FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S105FS VCO OSCILLETOR STAGE VHF-UHF Low Noise Amplifier Application • Low Noise Figure :NF=0.8dB @f=2GHz • High Gain:|S21e| =11dB (@f=2GHz) 0.6 ±0.05 2 3 40 2 Maximum Ratings (Ta = 25°C)

KDV365F

Contextual Info: SEMICONDUCTOR KDV365F TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. FEATURES CATHODE MARK Good C-V Linearity. Low Series Resistance. C 1 D 2 Small Package : TFSC. B A MAXIMUM RATING Ta=25 CHARACTERISTIC RATING