VGS15V Search Results

Contextual Info: Æ lltron PRODUCT DEVICES.INC. 1000V, 4 .4A, 4 .0 Q ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS SYMBOL D ra in - S o u rc e Vo 1t . 1 D rain-G ate Voltage (RGS-1.0Mo ) (1) Gate-Source V oltage Con t inuous D rain Current Continuous (Tc = 25* C) D ra in C u rre n t P u ls e d ( 3 )

Contextual Info: Æ iitro n PRODUCT D E V I CE S .I N C. l177 BLUE H E R O N B L V D . • RIVIERA BEACH. FLORIDA 33404 TEL: 407 048-4311 • TLX: 51-3435 « F A X : N-CHANNEL ENHANCEMENT MOS FET 1000V, 4 . 4 A , 4 . 0 Q (407) 863-594G ABSOLUTE MAXIMUM RATINGS PARAMETER

SDF6NA100

Abstract: 2A472
Contextual Info: Æwtion PRODUCT DEVICES.INC N-CHANNEL ENHANCEMENT MOS FET 1000V, 5.5A, ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS SYMBOL Drain-Source Volt. l Drain-Gate Vo 1tage (RGS-1.0Mo ) (1) Gate-Source Voltage Con t inuous Drain Current Continuous (Tc = 25’C) Drain Current Pulsed(3)

APT55M90BFN

Abstract: APT60M90BFN PD10
Contextual Info: ADVANCFD POWER TECHN^0L0^6Y 4 CIE IÂVP □ 257^ 0^ 00005*10 117 1> ADVANCED OD 4 'T -S fl-is PO W ER Tec h n o lo g y APT60M90BFN 600V 63.0A 0.090 APT55M90BFN 550V 63.0A 0.090 OS<4)* a POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFElTS

Contextual Info: International ggjRectifier P D - 9.1232 IRFP460LC HEXFET Power MOSFET • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced CjSS, Coss, CrgS Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated

J212

Contextual Info: J2 1 0 .J2 1 1 .J2 1 2 LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER LINEAR SYSTEMS Linear Integrated Systems FEATURES HIGH GAIN gfe = 7000|imho MINIMUM J211, J212 HIGH INPUT IMPEDANCE lQSS= 100pA MAXIMUM LOW INPUT CAPACITANCE C|##= 5pF TYPICAL ABSOLUTE MAXIMUM RATINGS

PN5033

Abstract: igss B-022-05 1300n
Contextual Info: CENTRAL SEMICONDUCTOR ^~r-ay-à*r na'Ht.a a0Q037i E M C E N •^D central g m ie sn tìu e to r Corp. Csnfral sem iconductor Corp. Central Sem iconductor Cori». Central sem iconductor Corp. 145 Adams Avenue ' Hauppauge, New York 11788 DESCRIPTION The CENTRAL SEMICONDUCTOR PN5033 type is a silicon P-channel junction field effect

Contextual Info: PD- 9.1336A International I R Rectifier IR F R /U 0 2 4 N PRELIMINARY HEXFET Power MOSFET • • • • • • Ultra Low O n-Resistance S urface M ount IRFR024N Straight Lead (IRFU024N) Advanced Process Technology Fast Switching Fully A valanche Rated

Contextual Info: i^^plltron PRODUCT D E V I C E S . I NC . 1000V, 9. 0A, ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL D ra in -s o u rc e V o l t . l D ra in -G a te V o lta g e (RgsM .O M o ) ( l ) G ate-Sou rce V o lta g e Con t i n uo u s D ra in C u rre n t C o n tin u o u s

Contextual Info: - SOLITRON DEVICES INC 4ÖE D • flBbflbQS ÜÜD3S77 D73 ■ S O D J f o W t X i m devices inc PRODUCT 'rg'&'fi N-CHANNEL ENHANCEMENT MOS FET W a llis 1000V, 4.4A. 4.0 n ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS SYMBOL Drain-Source Volt. l Drain-Gate Voltage

Contextual Info: Æ SOLITRON DEVICES INC Æntron devices. MAE D • p ro d u c t ^ . VDSS Drain-source Volt. l Drain-Gate Voltage VDGR (Rg s -I.OM o ) (1) Gate-Source Voltage VGS Cont inuous Drain Current Continuous ID (Tc = 25*C) IOM Drain Current Pulsed(3) PD Total Power Dissipation