VFBGA 48BALL Search Results

Contextual Info: 2 MEG x 16, 1 MEG x 16 ASYNC/PAGE CellularRAM MEMORY ASYNCHRONOUS CellularRAMTM MT45W2MW16PAFA MT45W1MW16PAFA Features Figure 1: 48-Ball VFBGA • Asynchronous and Page Mode interface • Random Access Time: 70ns, 85ns • Page Mode Read Access Sixteen-word page size

Contextual Info: PRELIMINARY‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE CellularRAM MEMORY ASYNCHRONOUS CellularRAMTM MT45W4MW16PFA MT45W4ML16PFA Features MT45W2MW16PFA MT45W2ML16PFA Figure 1: 48-Ball VFBGA • Asynchronous and Page Mode interface • Random Access Time: 70ns, 85ns

Contextual Info: 4 MEG x 16 ASYNC/PAGE CellularRAM MEMORY ASYNCHRONOUS CellularRAMTM MT45W4MW16PFA Features Figure 1: 48-Ball VFBGA • Asynchronous and page mode interface • Random Access Time: 70ns, 85ns • Page Mode Read Access Sixteen-word page size Interpage read access: 70ns, 85ns

Contextual Info: 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE CellularRAM MEMORY ASYNCHRONOUS CellularRAMTM MT45W4MW16PFA MT45W2MW16PFA Features Figure 1: 48-Ball VFBGA • Asynchronous and Page Mode interface • Random Access Time: 70ns, 85ns • Page Mode Read Access Sixteen-word page size

Contextual Info: 4 MEG x 16 ASYNC/PAGE CellularRAM 1.0 MEMORY ASYNC/PAGE CellularRAMTM 1.0 MEMORY MT45W4MW16PFA Features Figure 1: 48-Ball VFBGA • Asynchronous and page mode interface • Random Access Time: 70ns, 85ns • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ

label infineon application note

Abstract: DEVICE MARKING CODE table INFINEON transistor marking marking code C5 48 ball VFBGA 90 ball VFBGA marking E5 truth table for 1 to 16 decoder
Contextual Info: 2 MEG x 16, 1 MEG x 16 ASYNC/PAGE CellularRAM 1.0 MEMORY ASYNC/PAGE CellularRAMTM 1.0 MEMORY MT45W2MW16PAFA MT45W1MW16PAFA Features Figure 1: 48-Ball VFBGA • Asynchronous and Page Mode interface • Random Access Time: 70ns, 85ns • VCC, VCCQ Voltages 1.70V–1.95V VCC

Qimonda AG

Abstract: 48 ball VFBGA VFBGA P24A 54-BALL MARK FA P24Z
Contextual Info: PSRAM and CellularRAM Part Numbering System Micron's part numbering system is available at www.micron.com/numbering PSRAM and CellularRAM MT 45 W 1M W 16 P A FA - 70 1 Micron Technology WT ES Production Status Blank = Production ES = Engineering sample MS = Mechanical sample

MT29F1G08aba

Abstract: MT29F1G16ABA mt29f1g08 MT47H64M16 MT48LC32M16A2 MT49H32M18FM mt47h128m8 MT9V022 note Vfbga 10x19 MT48LC4M32B2
Contextual Info: Extended Operating Temperature Products Micron’s Extensive Line of Extended Operating Temperature Products Ultimate Performance Under Extreme Conditions Modern life is dependent on electronics that operate in exceptionally harsh environments. Cellular base stations and automotive electronics are just

CY7C1011CV33

Abstract: CY7C1011CV33-10BVI Ricoh 2205 VFBGA CY7C1011BV33 Vfbga package
Contextual Info: CY7C1011CV33 128K x 16 Static RAM Features • Pin equivalent to CY7C1011BV33 • High speed — tAA = 10 ns • Low active power — 360 mW max. • Data Retention at 2.0 • Automatic power-down when deselected • Independent control of upper and lower bits

BV48A

Contextual Info: CY7C1011CV33 128K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0

AN1064

Abstract: CY62167EV30 CY62167EV30LL
Contextual Info: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • TSOP I package configurable as 1M x 16 or as 2M x 8 SRAM ■ Very high speed: 45 ns ■ Wide voltage range: 2.20V–3.60V ■ Ultra low standby power ❐ Typical standby current: 1.5 µA

CY7C681

Abstract: CY62167EV30LL-45ZXIT US1260 CY7C68A
Contextual Info: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM 16-Mbit (1M x 16 / 2M x 8) Static RAM Features • TSOP I package configurable as 1M x 16 or 2M x 8 SRAM ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40°C to +85°C ❐ Automotive-A: –40°C to +85°C

Contextual Info: CY7C1061DV33 16-Mbit 1 M x 16 Static RAM 16-Mbit (1 M × 16) Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C1061DV33 is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits. ■ Low active power ❐ ICC = 175 mA at 100 MHz

CY62167EV30LL-45ZXI

Abstract: AN1064 CY62167EV30
Contextual Info: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • TSOP I Package Configurable as 1M x 16 or 2M x 8 SRAM ■ Very High Speed: 45 ns ■ Temperature Ranges ❐ Industrial: –40°C to +85°C ❐ Automotive-A: –40°C to +85°C ■ Wide Voltage Range: 2.20V to 3.60V

Contextual Info: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • TSOP I package configurable as 1M x 16 or as 2M x 8 SRAM ■ Very high speed: 45 ns ■ Wide voltage range: 2.20V–3.60V ■ Ultra low standby power ❐ Typical standby current: 1.5 µA

GLT5160AL16P-7TC

Abstract: GLT5160AL16
Contextual Info: G -LINK GLT5160AL16 ADVANCED 16M 2-Bank x 524288-Word x 16-Bit Synchronous DRAM FEATURES Single 3.3 V ±0.3 V power supply u Clock frequency 100 MHz / 125 MHz / 143 MHz/ 166 MHz u Fully synchronous operation referenced to clock rising edge u Dual bank operation controlled by BA (Bank Address)

CY62147CV25

Abstract: CY62147CV30 CY62147CV33 CY62147DV30
Contextual Info: CY62147DV30 4-Mbit 256K x 16 Static RAM Features vanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL ) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces

AN1064

Abstract: CY62167EV18 CY62167EV18LL CY62167EV18LL-55BAXI CY62167EV30LL
Contextual Info: CY62167EV18 MoBL 16 Mbit 1M x 16 Static RAM Features by 99 percent when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (I/O0 through I/O15) are placed in a high impedance state when: the

CY7C1041DV33-12BVJXE

Abstract: AN1064 CY7C1041CV33 CY7C1041DV33 C990 CY7C1041DV33-10
Contextual Info: CY7C1041DV33 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features Functional Description • Temperature ranges ❐ Industrial: –40 °C to 85 °C [1] ❐ Automotive-A : –40 °C to 85 °C [1] ❐ Automotive-E : –40 °C to 125 °C The CY7C1041DV33 is a high performance CMOS Static RAM

AN1064

Abstract: CY62167EV30
Contextual Info: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • TSOP I Package Configurable as 1M x 16 or 2M x 8 SRAM ■ Very High Speed: 45 ns ■ Temperature Ranges ❐ Industrial: –40°C to +85°C ❐ Automotive-A: –40°C to +85°C ■ Wide Voltage Range: 2.20V to 3.60V

Contextual Info: CY62147DV30 4-Mbit 256K x 16 Static RAM Features vanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL ) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces

55BV

Abstract: AN1064 CY62167EV18 CY62167EV18LL CY62167EV18LL-55BAXI CY62167EV18LL-55BVXI CY62167EV30LL
Contextual Info: CY62167EV18 MoBL 16-Mbit 1M x 16 Static RAM Features by 99% when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: the device is

Contextual Info: CY62167EV18 MoBL 16 Mbit 1M x 16 Static RAM Features by 99 percent when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (I/O0 through I/O15) are placed in a high impedance state when: the

cy7c1041dv

Abstract: CY7C1041CV
Contextual Info: CY7C1041DV33 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features Functional Description • Temperature ranges ❐ Industrial: –40 °C to 85 °C [1] ❐ Automotive-A : –40 °C to 85 °C [1] ❐ Automotive-E : –40 °C to 125 °C The CY7C1041DV33 is a high performance CMOS Static RAM