VESM Search Results

Contextual Info: v DSS HiPerFET Power MOSFETs ix f h /ix f m g n m IXFH/IXFM 6 N100 Symbol Test Conditions v ^ Voa« Tj = 25°C to 150°C; Vos Continuous ±20 V Transient ±30 V 6 A vesM •» ' dm dv/dt Tc Maximum Ratings = 25“C to 150°C 1 f RGS=1 M£2J \ 6N90 900 V

Contextual Info: 3-Pin Very Extreme Super Mini Package Embossed TPL3 Tape for the VESM Package Tape Dimensions Unit: mm 0.18 2.0 ±0.05 4.0 ±0.05 φ1.5 ±0.1 Y X 1.35 φ0.5 8.0 3.5 ±0.05 1.75 Y X’ Y’ Y’ Feed direction 1.3 X Cross section Y-Y’ X’ Cross section X-X’

VESM

Contextual Info: Very Extreme Super Mini Package 3pin VESM パッケージ 外形図 パッケージ形状および寸法 単位 : mm 1.2 ±0.05 0.13 ±0.05 0.32 ±0.05 1 0.22 ±0.05 1.2 ±0.05 0.8 ±0.05 3 2 0.4 0.4 0.5 ±0.05 0.8 ±0.05 参考パッド寸法 単位 : mm

Contextual Info: Very Extreme Super Mini Package 3pin VESM2 パッケージ 外形図 パッケージ形状および寸法 単位 : mm 1.2 ±0.05 0.3 ±0.05 0.09 ±0.03 1 1.2 ±0.05 0.8 ±0.05 3 2 0.4 0.4 0.8 ±0.1 参考パッド寸法 0.28 ±0.02 0.2 ±0.05 単位 : mm

Contextual Info: 3-Pin Very Extreme Super Mini Package Embossed TE85L Tape for the VESM2 Package Tape Dimensions Unit: mm 0.18 2.0 ±0.05 4.0 ±0.05 φ1.5 ±0.1 Y X 1.35 φ0.5 8.0 3.5 ±0.05 1.75 Y X’ Y’ Y’ 0.4 Feed direction 1.3 X X’ Cross section X-X’ Reel Dimensions

Contextual Info: Very Extreme Super Mini Package 3pin VESM2 パッケージ エンボス方式テーピング寸法 TE85L テープ形状および寸法 単位 : mm 0.18 2.0 ±0.05 4.0 ±0.05 φ1.5 ±0.1 Y X 1.35 φ0.5 8.0 3.5 ±0.05 1.75 Y X’ Y’ Y’ 0.4 テープ引き出し方向

Contextual Info: 3-pin Very Extreme Super Mini Package VESM2 Package Outline Dimensions Outline Dimensions Unit: mm 1.2 ±0.05 0.3 ±0.05 0.09 ±0.03 1 1.2 ±0.05 0.8 ±0.05 3 2 0.4 0.4 0.8 ±0.1 Land Pattern Example 0.28 ±0.02 0.2 ±0.05 Unit: mm 1.15 0.45 0.5 0.45 0.4 0.8

21L1

Contextual Info: 3-Pin Very Extreme Super Mini Package VESM Package Outline Dimensions Outline Dimensions Unit: mm 1.2 ±0.05 0.13 ±0.05 0.32 ±0.05 1 0.22 ±0.05 1.2 ±0.05 0.8 ±0.05 3 2 0.4 0.4 0.5 ±0.05 0.8 ±0.05 Land Pattern Example Unit: mm 1.15 0.45 0.5 0.45 0.4

Contextual Info: Reliability Tests Report Product Name: 2SC6026MFV Package Name: VESM 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Iron) Temperature cycling - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s

Contextual Info: Reliability Tests Report Product Name: 2SC5376FV Package Name: VESM 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Iron) Temperature cycling - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s

VESM

Contextual Info: Very Extreme Super Mini Package 3pin VESM パッケージ エンボス方式テーピング寸法 TPL3 テープ形状および寸法 単位 : mm 0.18 2.0 ±0.05 4.0 ±0.05 φ1.5 ±0.1 Y X 1.35 φ0.5 8.0 3.5 ±0.05 1.75 Y X’ Y’ Y’ テープ引き出し方向

Contextual Info: 2SK3857TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TV For ECM Unit: mm Application for Ultra-compact ECM 1.2±0.05 0.2±0.05 0.8±0.05 0.3±0.05 • -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj

transistors bipolar

Abstract: japan brt
Contextual Info: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: RN1130MFV Category: Transistors /Bipolar Small-Signal Transistors/Bias Resistor Built-in Transistors Single

Contextual Info: SSM3J56MFV TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOSⅥ SSM3J56MFV ○ Load Switching Applications • • 1.2 V drive Low ON-resistance:RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V)

Contextual Info: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: RN1131MFV Category: Transistors /Bipolar Small-Signal Transistors/Bias Resistor Built-in Transistors Single

Contextual Info: 2SK4059MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059MFV For ECM Unit: mm Application for compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C

Contextual Info: SSM3K04FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FV High-Speed Switching Applications Optimum for high-density mounting in small packages Characteristics Symbol Rating Unit Drain-source voltage VDS 20 V Gate-source voltage VGSS 10

Contextual Info: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: RN2114MFV Category: Transistors /Bipolar Small-Signal Transistors/Bias Resistor Built-in Transistors Single

Contextual Info: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: RN1118MFV Category: Transistors /Bipolar Small-Signal Transistors/Bias Resistor Built-in Transistors Single

2SK2292-01L

Contextual Info: F U JI 2SK2292-01L.S G IlL lM E U iM J IS FAP-IIA Series > Features - High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage - VGS = ± 30V Guarantee N-channel MOS-FET 250V 4A l.lfl 20W > Outline Drawing - Avalanche Proof

Contextual Info: DF3A6.2FV TOSHIBA Diodes For Protecting Against ESD DF3A6.2FV Product for Use Only as Protection against Electrostatic Discharge ESD 0.22±0.05 Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C Tstg −55 to 150 °C Storage temperature range

Contextual Info: 1SS362FV TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362FV Ultra-High-Speed Switching Applications Unit: mm z Small package 0.22±0.05 z Fast reverse recovery time: trr = 1.6 ns typ. Symbol Rating Unit VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current

Contextual Info: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 1SS361FV TOSHIBA Diode Silicon Epitaxial Planar Type 1SS361FV Ultra-High-Speed Switching Applications 0.22±0.05 Unit: mm Maximum peak reverse voltage Symbol Rating Unit VRM 85 V 2 3 0.13±0.05 Characteristic 1 0.5±0.05 Absolute Maximum Ratings (Ta = 25°C)