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    Contextual Info: Advanced Power MOSFET S F W /I9 6 1 0 FEATURES BVdss = -200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA Max. @ VOS= -200V


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