VDS25V Search Results

YTFP451

Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ir - YTFP451 MOSI INDUSTRIAL APPLICATIONS Unit in am HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 1&9MAX. 0aa±Q8 DRIVE APPLICATIONS. dl FEATURES:

Contextual Info: INTERNATIONAL RECTIFIER bSE D 4Û 5 S 4S 2 O O l b E C n 4TT • INR Bulletin E2793 International [îôrIRectifier IRFK2P350,IRFK2F350 Isolated Base Power HEX-pak Assembly - Half Bridge Configuration ■ • • • High Current Capability. UL recognised E78996.

APT801R2cN

Abstract: C 632 S1M
Contextual Info: A D VA NC ED o POUER TECHNOLOGY b lE D • □ E 5 7 cì D Eì Q0GQ777 215 HAVP Advanced P o w er Tec h n o lo g y D sili O S POWER MOS IV APT801R2CN APT751R2CN APT801R4CN APT751R4CN 800V 750V 800V 750V 7.0A 7.0A 6.5A 6.5A 1.20Q 1.20Q. 1.40Ì2 1.40Q

Contextual Info: ADVANCED POIilER T EC H N O L OGY b lE •K W/<m w POWER MOS IV D ■ OS ST TO T 000076«} T37 M A V P A d v a n ced po w er Te c h n o l o g y APT1004RCN 1000V 3.6A APT904RCN 900V 3.6A APT1004R2CN 1000V 3.3A APT904R2CN 900V 3.3A 4.00Q 4.00Q 4.20Q 4.20Q

nK2647

Abstract: T151 2sk2647 N CH FET 600V 9A
Contextual Info: S P E C I F I C A T I O N DEVICE NAME TYPE NAME P o w e r M O S F E T 2 SK 2 6 4 T - 0 1M R SPEC. No. Fuj i E l e c t r i c . Co., Ltd. This Specification is subject to change without notice. OATE DRAWN NAME APPROVED Fuji Electric C o jid CHECKED 12 Y 025T-R-004a

IC A244

Abstract: 2SK950 schematic UPS ica
Contextual Info: 2SK950 FUJI POW ER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I S E R IE S lOutline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■Applications Gate Drain Source • Switching regulators

2SK2834-01

Contextual Info: This material and the Information herein It ihe property of Fuji Eltctnc Co .Lid.They shall be neither reproduced, copied, leni. or disclosed in any way whatsoever lor ihe use of any third party.nor used for the manufacturing purposes without the express written consent of Fuji Electric Co. Ltd.

2SK2469-01MR

Contextual Info: '95 No. 11 F U J I V4># iw o M s iT it e u e *,<W*|; 4^ ^ y |i< iu v s <|#i t i l *±W * imma.b- _ ±/\7-M0SFET FAP-n 5 1 3 0 0 V /5 A 2SK2469-01MR N“L'V ^ ; u x > /\> X ^ > h®/N°7-M0SFET mm N-channel enhancement mode POWER MOSFET

2n2709

Abstract: C621 2N4411 c643 OC44 400M BSV55AP BSV55P T072 GM300
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

Contextual Info: TOSHIBA DISCRETE/OPTO 45E TCH7550 D QOlTTflM ? T O S H IB A F IE L D E F F E C T T R A N S IS T O R S I L I C O N N C H A N N E L M O S T Y P E (ir - ITOS*4 YTFP451 M O S I) INDUSTRIAL APPLICATIONS Unit ln mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

Contextual Info: TOSHIBA DISCRETE/OPTO 4SE D TOSHIBA FIELD EFFEC T TRANSISTOR SILICON N C H A N N EL MOS T Y P E (tt - • CJ D C1 7 2 S G □□ITTÔÔ 4 «TO S M - YTFP453 MOSI) 'T 3A - ' l INDUSTRIAL APPLICATIONS Unit in Bin HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

Contextual Info: TOSHIBA {DIS CR ET E/OPT O} 9097250 ^ o ìh lb n T O S H IB A TÏ D eT J D IS C R E T E /O P T O SEMICONDUCTOR ì 99D O^ESO 001L7t,3 ñ 16763 D -3=1-13 TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 792 SILICON N CHANNEL MOS TYPE (7 T -M 0S) TECHNICAL DATA INDUSTRIAL APPLICATIONS

YTFP452

Contextual Info: TOSHIBA DI SC RETE/OPTO 45E D TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (ir - • TOTTBSQ OOlTTÛb □ ■TOSH Y T r P 1 - rt YTFP452 MOSI) T 1IPs ~\ 3 INDUSTRIAL APPLICATIONS Unit ln nm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

Contextual Info: SOLITRON DEVICES INC \ SFNF065D 70 DË^Û3t,ôbDE □ □□nflfc, 2 SWITCH MOS PACKAGE TO-39 POWER MOS MAXIMUM RATINGS VDS *0 IDM VGS PD XL ^J oper T . stg UNITS PARAMETER SYMBOL Voltage, Drain to Source 50 V Drain Current, Continuous @ Tc=25°C 4.0 A

C621

Abstract: SD5013 2N551 transistor c640 npn Transistors 2n551
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

18200T

Abstract: germanium low power 150mW 460MSA 2N2097A C621 LM 18200T P1004 RT1116 2SC814 transistor C633
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

GM300

Abstract: CM602 ft06 transistor C633 FSP400 2n1763 C621 DA402 2N2458 transistor c640 npn
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C

2SK2806-01

Contextual Info: SPECIFICATION DEVICE NAME : TYPE NAME Power MOSFET : 2SK2806-01 SPEC. NO. Fuji Electric Co.Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric Co.,Ltd. DRAWN CHECKED s § M ? iY 0257-fi-004a 1 1.Scope This specifies Fuji Power MOSFET 2SK2806-01

Contextual Info: X S P E C I F I C A T I O N TE N TA T DEV ICE NAME : TYPE NAME : I VE P o w e r M O S F E T 2 S K 2 7 6 0- Q 1 R SPEC. No. Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAM E APPROV ED Fuji Electric Co^Lid. CHECKED

diode RU3

Abstract: characteristic of diode zl 100
Contextual Info: J 4z. *• SPECIFICATION Oaviaa Him* Tvb* Nflms _Sbof» J!a _ POWER MOSFET 2 S K 2 644 -0 1 M S 5 F 3 0 5 2 Hj I ■! I* : i|î fi i i i j f « ¡IN ? •ts I m \ É frlli / Fuji E lectric C a.,U d. M alfam ato Factory Q A Tg^S ^ A W E F u ji E to c tr fc C o .,L td .

complementary MOSFET 2sk

Abstract: transistor+2sk 2SK series 2SK 20a 600v 2sk 1181 2SK 150A 2SK+series
Contextual Info: SHINDENGEN Power MOSFET HVX-2 series Shindengen Electric Mfg.Co.,Ltd. Tokyo, Japan. 021^307 □□□2330 Tflû SHINDENGEN Power MOSFET Products and Their Applications s. VDSS V Input 60 150 DC12V DC24V 180 200 230 250 350 300 500 600 700 900 DC48V to 72V

2SK2654-01

Abstract: T151
Contextual Info: V S P E C 1 F 1 C A T I O N DEVICE NAME : TYPE NAME : SPEC. No. : P o w e r M O S F E T 2 SK 2 6 5 4— 0 1 Fu j i E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE DRAWN NAME APPROVED Fuji Electric Co^Ltd CHECKED Zt Y 0257-R-004a

100AH

Abstract: 2SK27 SC-65
Contextual Info: J. S P E C I F I C A T I O N DEVICE NAME : TYPE NAME : Po w e r M O S F E T 2 S K 2 7 6 3 - Q 1 SPEC. No. Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric CoJJcL CHECKED I DWG.N0. DRAWN

ZVN4306A

Abstract: so25
Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - M ARCH 94_ FEATURES * 100 Volt v DS * R DS!on = 1 -5 Q * Spice model available ABSOLUTE MAXIMUM RATINGS. SYMBOL > VALUE CO o PARAMETER Drain-Source Voltage Continuous Drain Current at Tamtp25°C