VCO 125 MHZ Search Results
VCO 125 MHZ Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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ADF4153
Abstract: M2032 M513
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MAVC-060125-532125 ISO9001 ADF4153 M2032 M513 | |
sensitive vibration detector
Abstract: 3127 ADF4153 M2032 M513
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MAVC-060125-533030 ISO9001 sensitive vibration detector 3127 ADF4153 M2032 M513 | |
HMC1034
Abstract: EVAL01-HMC1034LP6GE HMC1034LP6GE
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HMC1034LP6GE GR-253-CORE 24-Bit 36mm2 10G/40G/100G 1G/10G 10GFC 16GFC 32GFC HMC1034 EVAL01-HMC1034LP6GE HMC1034LP6GE | |
3.125G
Abstract: EVAL01-HMC1034LP6GE
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HMC1034LP6GE GR-253-CORE 24-Bit 36mm2 10G/40G/100G 1G/10G Infrastr22 10GFC 16GFC 32GFC 3.125G EVAL01-HMC1034LP6GE | |
H1034
Abstract: EVAL01-HMC1034LP6GE
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HMC1034LP6GE GR-253-CORE 24-Bit 36mm2 10G/40G/100G 1G/10G 10GFC 16GFC 32GFC H1034 EVAL01-HMC1034LP6GE | |
VCO 10G
Abstract: 80566
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HMC1034LP6GE GR-253-CORE 24-Bit 36mm2 10G/40G/100G 1G/10G Infrastr25 10GFC 16GFC 32GFC VCO 10G 80566 | |
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Contextual Info: HMC1034LP6GE v01.0312 Clock Genertors - SMT CLOCK GENERATOR WITH FRACTIONAL-N PLL & INTEGRATED VCO, 125 - 3000 MHz 1 Typical Applications Features • 10G/40G/100G Optical Modules, Transponders, Line Cards Frequency Range: 125 - 3000 MHz • OTN and SONET/SDH Applications |
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HMC1034LP6GE 10G/40G/100G 1G/10G GR-253-CORE 10GFC 16GFC 32GFC | |
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Contextual Info: HMC1034LP6GE v02.0912 CloCk Generators - sMt CLOCK GENERATOR WITH FRACTIONAL-N PLL & INTEGRATED VCO, 125 - 3000 MHz 1 Typical Applications Features • 10G/40G/100G optical Modules, transponders, line Cards Frequency range: 125 - 3000 MHz • otn and sonet/sDH applications |
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HMC1034LP6GE 10G/40G/100G 1G/10G GR-253-CORE 10GFC 16GFC 32GFC | |
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Contextual Info: HMC1032LP6GE v01.0712 Clock Generators - SMT Clock Generator with Fractional-N PLL & integrated VCO, 125 - 350 MHz 1 Typical Applications Features • 1G/10G Ethernet Line Cards Frequency Range: 125 - 350 MHz • OTN and SONET/SDH Applications 75 fs RMS Jitter Generation Typical |
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HMC1032LP6GE 1G/10G GR-253-CORE 24-Bit STS-192/STM-64 10GFC 16GFC | |
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Contextual Info: HMC1032LP6GE v01.0712 CloCk Generators - sMt CloCk Generator with FraCtional-n Pll & inteGrated VCo, 125 - 350 Mhz 1 typical applications Features • 1G/10G ethernet line Cards Frequency range: 125 - 350 MHz • otn and sonet/sDH applications 75 fs rMs Jitter Generation typical |
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HMC1032LP6GE 1G/10G GR-253-CORE 24-Bit STS-192/STM-64 10GFC 16GFC | |
H1032
Abstract: square wave generator ic
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HMC1032LP6GE 1G/10G GR-253-CORE 24-Bit 36mm2 STS-192/STM-64 10GFC 16GFC H1032 square wave generator ic | |
OTU1Contextual Info: HMC1032LP6GE v00.1111 Clock Genertors - SMT Clock Generator with Fractional-N PLL & integrated VCO, 125 - 350 MHz 1 Typical Applications Features • 1G/10G Ethernet Line Cards Frequency Range: 125 - 350 MHz • OTN and SONET/SDH Applications 75 fs RMS Jitter Generation Typical |
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HMC1032LP6GE 1G/10G GR-253-CORE 24-Bit 36mm2 STS-192/STM-64 10GFC 16GFC OTU1 | |
H1032Contextual Info: HMC1032LP6GE v00.1111 Clock Genertors - SMT Clock Generator with Fractional-N PLL & integrated VCO, 125 - 350 MHz 0-1 Typical Applications Features • 1G/10G Ethernet Line Cards Frequency Range: 125 - 350 MHz • OTN and SONET/SDH Applications 75 fs RMS Jitter Generation Typical |
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HMC1032LP6GE 1G/10G GR-253-CORE 24-Bit 36mm2 STS-192/STM-64 10GFC 16GFC H1032 | |
MA27V11
Abstract: MA1401
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MA27V11 MA27V11 MA1401 | |
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MA27V11Contextual Info: Variable Capacitance Diodes MA27V11 Silicon epitaxial planar type Unit: mm For VCO 0.27+0.05 –0.02 0.10+0.05 –0.02 Symbol Rating Unit Reverse voltage VR 8 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0 to 0.01 Parameter |
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MA27V11 MA27V11 | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Variable Capacitance Diodes MA27V04 Silicon epitaxial planar type Unit: mm 0.27+0.05 –0.02 For VCO 0.10+0.05 –0.02 Unit 6 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 |
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2002/95/EC) MA27V04 | |
MA27V14Contextual Info: Variable Capacitance Diodes MA27V14 Silicon epitaxial planar type Unit: mm For VCO 0.27+0.05 –0.02 0.10+0.05 –0.02 Unit Reverse voltage DC VR 6 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.15 max. Rating 0.52±0.03 Symbol |
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MA27V14 MA27V14 | |
MA27V14Contextual Info: Variable Capacitance Diodes MA27V14 Silicon epitaxial planar type Unit: mm For VCO 0.27+0.05 –0.02 0.10+0.05 –0.02 Rating 0.52±0.03 Symbol Unit Reverse voltage VR 6 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0 to 0.01 |
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MA27V14 MA27V14 | |
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Contextual Info: Variable Capacitance Diodes MA27V14 Silicon epitaxial planar type Unit: mm For VCO 0.27+0.05 –0.02 0.10+0.05 –0.02 Unit Reverse voltage DC VR 6 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.15 max. Rating 0.52±0.03 Symbol |
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MA27V14 resistan25 | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Variable Capacitance Diodes MA27V23 Silicon epitaxial planar type For VCO Unit: mm 0.27+0.05 –0.02 • Features VR 6 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C |
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2002/95/EC) MA27V23 | |
MA27V17Contextual Info: Variable Capacitance Diodes MA27V17 Silicon epitaxial planar type 0.27+0.05 –0.02 For VCO 0.10+0.05 –0.02 Unit: mm Rating Unit Reverse voltage VR 6 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.52±0.03 Symbol 0 to 0.01 |
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MA27V17 MA27V17 | |
diode ir 10-16Contextual Info: Variable Capacitance Diodes MA27V12 Silicon epitaxial planar type Unit: mm For VCO 0.27+0.05 –0.02 0.10+0.05 –0.02 Unit Reverse voltage DC VR 8 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.15 min. 0.15 max. Rating 5° |
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MA27V12 diode ir 10-16 | |
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Contextual Info: Variable Capacitance Diodes MA27V13 Silicon epitaxial planar type Unit: mm For VCO 0.27+0.05 –0.02 0.10+0.05 –0.02 Unit Reverse voltage DC VR 12 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.15 min. 0.15 max. Rating 5° |
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MA27V13 | |
MA27V15Contextual Info: Variable Capacitance Diodes MA27V15 Silicon epitaxial planar type Unit: mm 0.27+0.05 –0.02 For VCO 0.10+0.05 –0.02 Rating Unit VR 6 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.15 min. 0.52±0.03 Symbol 0 to 0.01 Parameter |
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MA27V15 MA27V15 | |