VCE30 Search Results

Contextual Info: 1DI300MN-050 300A =? D .— )V POWER TRANSISTOR MODULE : F e a t u r e s • hpe^SV-' High DC Current Gain • flEftrofBtttt • S t t it t f t f t liE B r f ii • E l i i : A p p lic a t io n s • > J<— 9 General Purpose Inverter • Uninterruptible Power Supply

100MHZ

Abstract: GPN2222A GPN2907A
Contextual Info: ISSUED DATE :2003/12/15 REVISED DATE :2004/11/29B GPN2907A P NP EP ITAXI AL P L ANAR T RANS ISTO R Description The GPN2907A is designed for general purpose amplifier and high speed, medium-power switching applications Features *Low Collect Saturation voltage.

2N2901

Abstract: npn 2907a EBC 2N2907 PN2907A FN2907 PH2907 2N2222 2N2907A LB-15N PN2907
Contextual Info: CRO 2N 2 9 0 7 2 N 2 9 07A PN 2 9 0 7 PN 2907A CASE TO-18 THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222,

Contextual Info: TO S H I B A HSE D DISCRETE/OPTO • T Q T 7 E 5 D DDlflODD T « T O S M TOSHIBA TRANSISTOR - YTS3904 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER Unit in mm APPLICATIONS. FEATURES: . Low Leakage Carrent : IcEV“50nA(Max.), IgEV^SOnAiMax.)

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general-purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

a7y transistor

Abstract: transistor 009 transistor a7y 1DI300MN-050 M115 T151 T460 1di300 TJI-25
Contextual Info: 1DI300MN-050 300A • Outline Drawings , < r p - y POWER TRANSISTOR MODULE : Features • hFE ^i^v,' High DC C urren t Gain • KF*gJSt •% m < n f f i m t • ffliis ■ A pplications • //U fl'f > '< — 9 General Purpose Inverter • U n in te rru p tib le P ow er S upply

2N2905A

Contextual Info: cs-o 2N/PN2904A 2N/PN2905A 2N/PN2904A & 2N/PN2905A are PNP silicon planar epitaxial transistors. "PNP SILICON TRANSISTORS TO-39 It is intended T0-92A Jpj for high speed medium power switching and general purpose amplifier applications. C B E ABSOLUTE MAXIHUM RATINGS

Contextual Info: KSC326S NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER SOT-23 • Complement to KSA1298 ABSOLUTE MAXIMUM RATINGS T a- 2 5 ,C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation

hx- je

Contextual Info: 2N/PN2904A 2N/PN2905A ¡v' 'PNP SILICON TRANSISTORS 2N/PN2904A & 2N/PN2905A are PNP s il icon planar epitaxial transistors. TO-39 T0-92A It is intended for high speed medium power switching and general purpose amplifier applications. ! ABSOLUTE MAXIMUM RATINGS

PA0016

Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
Contextual Info: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30

N-1030

Abstract: Zener Diode B
Contextual Info: 1DI400MN-050 400A : Outline Drawings POWER TRANSISTOR MODULE : Features • hFE*f# i ' High DC Current Gain : Applications • i/LSK >*< — $ General Purpose Inverter • Uninterruptible Power Supply • N Mountingtorque*?9-4BkQ-0ffl Servo & Spindle Drive for NC Machine Tools

L302A

Contextual Info: 1 D I 4 M P - 5 4 A , ± , , : Outline Drawings POW ER T R A N S IS T O R M ODULE : Features • hFE*''SiL' High DC Current Gain • FA X • BES&OfBjlH&'it • S fe K tt ftliR n iE : Applications • iHffl'f > ' < — $ General Purpose Inverter • $IEf?Q%iKI£|£

BFX80

Abstract: TO77
Contextual Info: Dey 80 SILICON PLANAR NPN/PNP LO W -LEVEL, LOW-NOISË COM PLEM ENTARY AM PLIFIER The BFX 80 is a six terminal device containing anNPN/PNP com plem entary pair o f isolated silicon planar epitaxial transistors in Jedec T O -7 7 metal case. This device is particularly

Contextual Info: TOSHIBA DISCRETE/OPTO 4SE D • ^0=17250 O a i T ^ S 1 «TOSM TOSHIBA YTQ9QÍ17 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) YTSZ907 FOR HIGH-SPEED SWITCHING USE DC TO VHF AMPLIFIER APPLICATIONS AND

Contextual Info: 1DI300MN-050 300A • Outline Drawings , < r p - y POWER TRANSISTOR MODULE : Features • hFE^i^v,' High DC Current Gain • KF*gJSt •% m < n f f i m t • ffliis ■ A pplications • //U fl'f > ' < — 9 • General Purpose Inverter U ninterruptible Power Supply

Contextual Info: CRO 2N 2907 2N 2 9 07A PN 2907 PN2907A CASE TO-18 THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222, 2N2222A, PN2222, PN2222A RESPECTIVELY.

YTS3904

Abstract: YTS3906
Contextual Info: TOSHIBA TRANSISTOR YTS3904 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER Unit in mm APPLICATIONS. FEATURES : . Low Leakage Current : !cEV*50nA(Max.), lBEV*50aA(Max.) <3 V c e -30V, V BE-3V . Excellent DC Current Gain Linearity

2sc144

Abstract: 2SC1446
Contextual Info: 2 S C 1 4 4 6 NPN zzXSsXrJ- U—"^SH /Si NPN Triple Diffused Planar B^ifijS^S^ffl^ffl/Line-Operated AF Amplifier *7 ^ ^/Chrominance Output Unit *mm 11.5max. Sfr/Features 4. 8max. 1. 5max. • A8fc lfi“C 1W O iiiiJ ^ i|^ > ix tvi ‘o /lW output in class-A operation