VCE 500V NPN TRANSISTOR Search Results

Contextual Info: FMMT459 500V Silicon NPN high voltage switching transistor Summary V BR CEV > 500V V(BR)ECV > 6V Ic(cont) = 150 mA Vce(sat) = 70 mV @ 50 mA Description This new high voltage transistor provides users with very efficient performance, combining low VCE(SAT) high Hfe to give extremely low on state losses at 500V operation, making it ideal for use

20MHZ

Abstract: FMMT459 FMMT459TA FMMT459TC npn high voltage transistor 500v sot23
Contextual Info: FMMT459 500V Silicon NPN high voltage switching transistor Summary V BR CEV > 500V V(BR)ECV > 6V Ic(cont) = 150 mA Vce(sat) = 70 mV @ 50 mA Description This new high voltage transistor provides users with very efficient performance, combining low VCE(SAT) high Hfe to give extremely low on state losses at 500V operation, making it ideal for use

Contextual Info: FMMT459 500V Silicon NPN high voltage switching transistor Summary V BR CEV > 500V V(BR)ECV > 6V Ic(cont) = 150 mA Vce(sat) = 70 mV @ 50 mA Description This new high voltage transistor provides users with very efficient performance, combining low VCE(SAT) high Hfe to give extremely low on state losses at 500V operation, making it ideal for use

vbe 10v, vce 500v NPN Transistor

Abstract: L 10M marking 20MHZ FMMT459 FMMT459TA FMMT459TC npn high voltage transistor 500v sot23 NPN VCEO 500V sot23
Contextual Info: FMMT459 500V Silicon NPN high voltage switching transistor Summary V BR CEV > 500V V(BR)ECV > 6V Ic(cont) = 150 mA Vce(sat) = 70 mV @ 50 mA Description This new high voltage transistor provides users with very efficient performance, combining low VCE(SAT) high Hfe to give extremely low on state losses at 500V operation, making it ideal for use

BUV25

Abstract: transistor Vbe 1 vce 500v NPN Transistor npn high voltage transistor 500v 8a NPN Transistor 8A low vce 16a
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV25 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = 0.6V (Max.)@IC= 6A ·High Power Dissipation ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 500V (Min.) APPLICATIONS

ATV-18

Abstract: 2SC4140
Contextual Info: 2SC4140 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor Unit VCB=500V 100max µA VCEO 400 V IEBO VEB=10V 100max µA 10 V V(BR)CEO V 18(Pulse36) A hFE IC=25mA 400min VCE=4V, IC=10A 10 to 30 6 A VCE(sat) IC=10A, IB=2A

2SC4297

Contextual Info: 2SC4297 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor VCB=500V 100max µA VCEO 400 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 12(Pulse24) A hFE VCE=4V, IC=7A 10 to 30 IB 4 A VCE(sat) IC=7A, IB=1.4A

2SC4140

Abstract: ATV-18 vbe 10v, vce 500v NPN Transistor 110MP
Contextual Info: 2SC4140 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor Unit VCB=500V 100max µA VCEO 400 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 18(Pulse36) A hFE VCE=4V, IC=10A 10 to 30 6 A VCE(sat) IC=10A, IB=2A

2SC4297

Contextual Info: 2SC4297 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor Unit VCB=500V 100max µA VCEO 400 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 12(Pulse24) A hFE VCE=4V, IC=7A 10 to 30 IB 4 A VCE(sat) IC=7A, IB=1.4A

2SC4138

Contextual Info: 2SC4138 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor Unit ICBO VCB=500V 100max µA VCEO 400 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 10(Pulse20) A hFE VCE=4V, IC=6A 10 to 30 4 A VCE(sat) IC=6A, IB=1.2A

TS13001

Abstract: vce 500v NPN Transistor TS13001CT
Contextual Info: TS13001 High Voltage NPN Transistor BVCEO = 400V BVCBO = 500V Ic = 0.1A VCE SAT , = 0.5V @ Ic / Ib = 50mA / 10mA Pin assignment: 1. Emitter 2. Collector 3. Base Features — Ordering Information High voltage. Part No. — High speed switching Structure — Packing

Contextual Info: TSC10 Preliminary High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 500V BVCBO 980V IC 1.5A VCE SAT Features 0.5V @ IC / IB = 0.5A / 0.1A Block Diagram  High Voltage  High Speed Switching Structure 

1.5A NPN power transistor TO-92

Abstract: vbe 10v, vce 500v NPN Transistor
Contextual Info: TSC10 Preliminary High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 500V BVCBO 980V IC 1.5A VCE SAT Features 0.5V @ IC / IB = 0.5A / 0.1A Block Diagram ● High Voltage ● High Speed Switching Structure

2N3055

Abstract: 2n5471 TRANSISTOR 2Sc 2525 2N1487 2N1488 2N1490 2N1702 2N3442 2N3445 MJ2955
Contextual Info: General Transistor Corporation CASE lc M A X V ceo (SUS) TO-3 = 2-50A = 35-500V NPN Power Transistors PNP VCEO M 1C (max) (A) hFE@ic/Vc* (min-m« @ A/V) VCE(SAT) @IC/IB (V @ A/A) V8E @IC/VCE (V @ A/V) 40 55 40 55 6 6 6 6 15-45 @ 1.5/4 15-45 @ 1.5/4 25-75 @1.5/4

2SC5130

Abstract: FM20
Contextual Info: 2SC5130 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor 2SC5130 Unit VCB=500V 100max µA VEB=10V 10max µA IC=25mA 400min ICBO VCEO 400 V IEBO VEBO 10 V V(BR)CEO 5(Pulse10) A hFE VCE=4V, IC=1.5A 10 to 30 10.1±0.2

Contextual Info: 2SC4073 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor VCEO 400 V VEBO 10 V 5(Pulse10) A IC Conditions Ratings Unit VCB=500V 100max µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=2A 10 to 30

2SC4073

Abstract: FM20 SE-05
Contextual Info: 2SC4073 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor V ICBO VCEO 400 V VEBO 10 V 5(Pulse10) A IC Unit VCB=500V 100max µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=2A 10 to 30 IB 2

NPN Transistor 500V to3

Abstract: NPN Transistor 10A 400V to3
Contextual Info: SILICON NPN POWER SWITCHING TRANSISTOR BUX45X • High Voltage, High Power, Fast Switching. • Hermetic Metal TO3 Package. • Ideally suited for Motor Control and Power Switching Circuits • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

Contextual Info: SILICON NPN POWER SWITCHING TRANSISTOR BUX45X • High Voltage, High Power, Fast Switching. • Hermetic Metal TO3 Package. • Ideally suited for Motor Control and Power Switching Circuits • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

vbe 10v, vce 500v NPN Transistor

Abstract: vce 500v NPN Transistor transistor bu941 ignition coil bu941 ignition coil npn power darlington High voltage ignition coil driver Ignition Driver IC bu941 npn DARLINGTON 10A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU941 DESCRIPTION •High Voltage ·DARLINGTON APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS Ta=25℃ SYMBOL

vbe 10v, vce 500v NPN Transistor

Abstract: High voltage ignition coil driver vce 500v NPN Transistor BU941T ignition coil npn power darlington Ignition Driver IC HIGH VOLTAGE IGNITION COIL NPN DARLINGTON 10A 500V ignition coil driver
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU941T DESCRIPTION •High Voltage ·DARLINGTON APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS Ta=25℃ SYMBOL

vce 500v NPN Transistor

Abstract: vbe 10v, vce 500v NPN Transistor High voltage ignition coil driver ignition coil bu941 bu941 ignition coil npn power darlington Ignition Driver IC HIGH VOLTAGE IGNITION COIL NPN Transistor VCEO 450V
Contextual Info: Product Specification www.jmnic.com BU941 Silicon NPN Power Transistor DESCRIPTION ・High Voltage ・DARLINGTON APPLICATIONS ・High ruggedness electronic ignitions ・High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS Ta=25℃ SYMBOL PARAMETER

vce 500v NPN Transistor

Abstract: NPN Transistor 1A 400V vbe 10v, vce 500v NPN Transistor HP50 VCE-500V 300V transistor npn 2a
Contextual Info: NPN S I L I C O N TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HP50 █ APPLICATIONS High Voltage And switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 T stg ——Storage Temperature………………………… －65~150℃ T j ——Junction Temperature……………………………… 150℃

transistor bu931

Abstract: bu931 equivalent NPN DARLINGTON 10A 500V BU931 vbe 10v, vce 500v NPN Transistor NPN Transistor VCEO 450V ignition coil npn power darlington Darlington NPN Silicon Diode vce 500v NPN Transistor transistor npn 500v
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU931 DESCRIPTION •High Voltage ·DARLINGTON APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS Ta=25℃ SYMBOL