VARIA Search Results

C 34 F

Abstract: 1SV274 D234
Contextual Info: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV274 C A T V T U N IN G . • • • • High Capacitance Ratio : C2V / C25V = 12.5 Typ. Low Series Resistance : rs = 0.6f2 (Typ.) Excellent C-V Characteristics, and Small Tracking Error. Small Package

Contextual Info: TCM29C23, TCM129C23 VARIABLE-FREQUENCY PCM OR DSP INTERFACE S C T S 0 2 9 A -A U G U S T 1989 -R E V IS E D JULY 1996 • Combined ADC, DAC, and Filters • Extended Variable Frequency Operation - Master Clock Up to 4.096 MHz - Sample Rates Up to 16 kHz - Passband Up to 6 kHz

Contextual Info: TOSHIBA 1SV230 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV230 Unit in mm CATV CONVERTER 1st OSC TUNING. • High Capacitance Ratio : C2V ! C20V = 8 Typ. • Low Series Resistance : rs = 0.730 (Typ.) • Useful for Small Size Tuner.

1SV261

Contextual Info: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV261 UHF SHF TUNING • H igh C apacitance R atio : C 2 V /C 2 5 V = 5.7 Typ. • Low Series R esistance : r s = 1.20 (Typ.) • E xcellent C-V C h aracteristics, an d Sm all T rack in g E rror.

Contextual Info: TOSHIBA 1SV282 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 282 Unit in mm CATV TUNING • • • • High Capacitance Ratio : C2 v / C 2 5 V = 12.5 TYP. Low Series Resistance : rs = 0.6H (TYP.) Excellent C-V Characteristics, and Small Tracking Error.

SV277

Contextual Info: 1SV277 TO SHIBA 1 SV277 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iv /C 4v = 2.3 Typ. Low Series Resistance : rs = 0.42H (Typ.) Small Package M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV245 UHF SHF T U N IN G • • • High Capacitance Ratio : C2V / C25V = 5.7 Typ. Low Series Resistance : rs= 1.20 (Typ.) Excellent C - V Characteristics, and Small Tracking Error. M A X IM U M RATIN G S (Ta = 25°C)

Contextual Info: 1SV276 TO SHIBA 1 SV2 7 6 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iv /C 4v = 2.0 Typ. Low Series Resistance : rs = 0.22H (Typ.) Small Package M A X IM U M RATINGS (Ta = 25°C)

7497 bit rate

Contextual Info: TYPES SN5497.SN7497 SYNCHRONOUS 6-BU BINARY RATE MULTIPLIERS DECEMBER • • • Perform Fixed-Rate or Variable-Rate Frequency Division SN5497 . J OR W PACKAGE TOP VIEW 1 L J i6 a v e c 15 D B 3 i B lC I B4 C 2 In p u ts I B5 C 3 14 ] B 2 1 BOC 4 13 ] C L R

marking t6 VARIABLE CAPACITANCE DIODE

Abstract: 1SV211
Contextual Info: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV211 CATV TUNING. • • • High Capacitance Ratio : C2V / C25V = 12.5 Typ. Excellent C - V Characteristics, and Small Tracking Error. Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C)

1sv257

Contextual Info: TOSHIBA 1SV257 Variable Capacitance Diode U nit in mm Silicon Epitaxial Planar Type VCO For UHF Ratio Features • Ultra Low Series Resistance : rs = 0.2Q Typ. • Useful for Small Size Set A bso lu te M axim um R atings (Ta = 25 C) CHARACTERISTIC R everse V o lta g e

1SV304

Contextual Info: T O SH IB A 1SV304 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V3 0 4 VCO FOR VHF BAND RADIO U nit in mm • Sm all Package • High Capacitance Ratio : C i v / C 4 v = 3.0 Typ. • Low Series Resistance : rs = 0 .2 7 0 (Typ.) MAXIMUM RATINGS (Ta = 25°C)

1SV186

Abstract: 1SV186 toshiba
Contextual Info: TO SHIBA 1SV186 Unit in mm Variable Capacitance Diode 1 . 5 - ili 5 Silicon Epitaxial Planar Type UHF SHF Tuning Features • High Capacitance Ratio : C 2V/C25V = 5.2 Typ. • Low Series Resistance : rs = 1 ,2Q (Typ.) • Excellent C-V Characteristics, and Small Tracking Error

RDA 8810

Abstract: mfm encoder tw 8826 smd K2F NRZ to MFM encoder ade vco stg 8810 tc8560 13/13/RDA+8810 13/13/RDA 8810
Contextual Info: HARD DISK CONTROLLER TC8563AF-88 Variable Frequency O scillator for Hard Disk 1. GENERAL DESCRIPTION The TC8563AF-88 is a single chip VFO developed for easy realization of a hard disk system together with the hard disk controller TC8560F. T his VFO has realization the multi-stage delay line,

Contextual Info: 1SV229 TO SHIBA 1 SV2 2 9 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • SILICON EPITAXIAL PLANAR TYPE Unit in mm Ultra Low Series Resistance : rs = 0.2fl Typ. Useful for Small Size Set M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: DN-40 U N IT R O D E Design Note THE EFFECTS OF OSCILLATOR DISCHARGE CURRENT VARIATIONS ON MAXIMUM DUTY CYCLE AND FREQUENCY IN UC3842 AND UC3842-"A" PWM ICs by YEAM CHONG HOCK Many designers try to program a precise maximum duty cycle and operating frequency by careful se­

sonar block diagram

Abstract: sonar power amplifier for sonar
Contextual Info: TL852 SONAR RANGING RECEIVER • Designed for Use with the TL851 in Sonar Ranging Modules Like the SN28827 • Digitally Controlled Variable-Gain Variable-Bandwidth Amplifier • Operational Frequency Range of 20 kHz

power amplifier rf

Abstract: "docsis 3.0" TAT2814 J-STD-020 SAC305 TAT2814A
Contextual Info: TAT2814A DOCSIS 3.0 / Edge QAM Variable Gain Amplifier Applications • • Integrated DOCSIS 3.0 / Edge QAM RF Amplifier chain Forward path 45 – 1003 MHz variable-gain applications Product Features • • • • • • • • • • Meets DOCSIS 3.0 with +4 dB typical performance

TQM8M9074

Abstract: Z11 Marking Code
Contextual Info: TQM8M9074 ½ W High Linearity Variable Gain Amplifier Applications 2G / 3G / 4G Wireless Infrastructure LTE / WCDMA / CDMA / EDGE General Purpose Wireless 20-pin 5x5mm leadless package Product Features Functional Block Diagram Integrates Amp + VVA + Amp functionality

Contextual Info: TQM879006 1.8-2.7GHz Digital Variable Gain Amplifier Applications 3G / 4G Wireless Infrastructure CDMA, TD-CDMA, WCDMA, LTE Repeaters PTP Radio IF Chains 28-pin 6x6mm leadless SMT package Product Features Functional Block Diagram 1.8-2.7 GHz Frequency Range

Contextual Info: TA48LS00F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA48LS00F 300 mA Output Current, Variable Output Voltage and Low Dropout Voltage Regulator with ON/OFF Control Switch The TA48LS00F consists of small-surface mount type low-dropout regulators with an output current of 300 mA

TQM8M9075

Contextual Info: TQM8M9075 0.05-4 GHz Digital Variable Gain Amplifier Applications • • • • Wireless Infrastructure Fixed Wireless Microwave and Satellite Radio General Purpose Wireless 32-pin 5x5mm leadless SMT package Product Features • • • • • • • •

Contextual Info: ` Preliminary Datasheet 14.4mm x 9.5mm x 5.5mm SMD 155.52 MHz XO PECL or LVPECL Output for SONET/SDH Applications Electrical Performance Operating Conditions Nominal Frequency Frequency Stability Set frequency Frequency vs. Temperature Frequency vs. Supply Voltage Variation

42tm022

Abstract: 42TM006-RC 42TM113 Xicon audio transformers 42TM011 42TM018 42TM006 42TM013-RC 42TM013 42TM002
Contextual Info: Audio Transformers 42TM Series Pri. Sec. .866 .669 max. P Schematic: A Pri. 6 5 Sec. 4 2 3 Schematic: B 1 .140 ±.020 Dimensions In. .786 .591 ±.039 .197 min. .068 ±.003 .492 .500 DIMENSIONS AND PERMISSIBLE RIPPLE CURRENT • Impedance variation: ±10% @ 1KHz