VARACTOR BEAM LEAD Search Results

construction of varactor diode

Abstract: varactor diode q factor measurement ML46580S-992 varactor diode capacitance measurement testing of varactor diode MP3021-001 MA46589 5010 varactor symbol of varactor diode and equivalent circuit varactor high power
Contextual Info: Beam Lead Gallium Arsenide Tuning Varactor Diode ML46580S-992 ML46580S-992 Preliminary Specifications High Reliability Semiconductor – Beam Lead Gallium Arsenide Tuning Varactor Diode Features • • • • • Package Outline Constant Gamma of 1.25 Strong Beam Construction

Contextual Info: 1TE D • 4bli3303 0 0 00 3 1 3 Beam Lead Varactor Diodes SECTION 4 MILLIMETER-WAVE DIODES HUGHES/ MICROWAVE PRDTS The Hughes model 47401H-0101 beam-lead varactor is a ; GaAs Schottky-barrier device which features a rugged : beam-lead structure that provides lead pull-strengths of 10 g

ODS-1209

Abstract: MA46580 MA46580-1209 MA46585 MA46585-1209 Tuning Varactors
Contextual Info: RoHs Compliant Beam Lead Constant Gamma GaAs Tuning Varactor MA46580 & MA46585 V3 Features Absolute Maximum Ratings @ TA=+25 °C • Constant Gamma = 1.0 & 1.25 available • High Q 3000 minimum at 4V 50MHz • Strong Beam Construction (Minimum 10 gram beam strength)

ODS-1209

Abstract: construction of varactor diode MA46580 MA46580-1209 MA46585 MA46585-1209
Contextual Info: MA46580 & MA46585 Beam Lead Constant Gamma GaAs Tuning Varactor Rev. V4 Features Absolute Maximum Ratings @ TA=+25 °C • Constant Gamma = 1.0 & 1.25 available • High Q 3000 minimum at 4V 50MHz • Strong Beam Construction (Unless Otherwise Noted) (Minimum 10 gram beam strength)

CD 4016 ic testing method

Abstract: MA46589
Contextual Info: ML46580S-992 M/A-COM Preliminary Specifications High Reliability Semiconductor - Beam Lead Gallium Arsenide Tuning Varactor Diode Features • • • • • Package Outline Constant Gamma of 1.25 Strong Beam Construction Low Parasitic Capacitance High Q

HA 4016

Abstract: nia4
Contextual Info: ML46580S-992 I M/A-COM Preliminary Specifications High Reliability Semiconductor - Beam Lead Gallium Arsenide Tuning Varactor Diode Features • • • • • M n r - & Microwave Products Package Outline Constant Gamma o f 1.25 Strong Beam Construction Low Parasitic Capacitance

construction of varactor diode

Abstract: MA46589
Contextual Info: A /jfas?A MA46580 through 46589 Series Gamma 1.0 & 1.25 Beam Lead Constant Gamma Gallium Arsenide Tuning Varactors Features • GAMMA OF 1.0 AND 1.25 AVAILABLE ■ CONSTANT GAMMA FOR LINEAR TUNING ■ STRONG BEAM CONSTRUCTION ■ LOW PARASITIC CAPACITANCE

Gunn Diode

Abstract: Microwave Silicon Detector Diode DW9248 microwave waveguide Marconi gunn Silicon Detector UHF diode varactor diode filter varactor
Contextual Info: Product List TYPE No. DESCRIPTION DA1304 DA1307 MILLIMETRE WAVE BALANCED MIXER 34.0 to 34.4GHz BALANCED MIXER C & X BAND DOUBLE BALANCED MIXER C & X BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER

Diodes

Abstract: RF Diode Design Guide
Contextual Info: RF Diode Design Guide Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high reliability analog and mixed signal semiconductors. Leveraging core technologies, Skyworks offers diverse standard and custom linear products supporting automotive, broadband, cellular infrastructure, energy management,

constant current diodes

Contextual Info: Beam-Lead GaAs Hyperabrupt Tuning Diodes Features • ■ ■ ■ ■ Constant Gamma Over a Wide Tuning Range Low Parasitic Capacitance and Inductance High Q Strong Beam-Lead Construction Stable Performance in High-Rel Environment X Description Absolute Maximum Ratings

C22V

Abstract: CVG7965-01 CVG7965-02 CVG7965-03 CVG7965-04 CVG7965-05 CVG7965-06 CVG7965-07 varactor alpha
Contextual Info: Beam-Lead GaAs Hyperabrupt Tuning Diodes ALPHA IN D / SEniCONDUCTOR 4ÔE D • 0365443 'T‘-CsTM ! 0001332 b35 ■ ALP Features ■ ■ ■ ■ ■ Description Constant Gamma Over a Wide Tuning Range Low Parasitic Capacitance and Inductance HighQ Strong Beam-Lead Construction

relay srd

Contextual Info: MCE TECHNOLOGIES Products that make a world of difference MCE Technologies, Inc. is a world leader in the design, manufacture and marketing of microwave and RF devices, components and subsystems for wireless applications including cellular/ mobile GSM, WCDMA and CDMA2000 base stations, satellite, wireless

hyperabrupt tuned oscillator

Abstract: missile seeker 4ST520 45331 police radar detector detector 45231 4648-1
Contextual Info: M/A-COM TABLE 1 SEMICONDUCTOR PRODUCTS OPERATION • Burlington, MA 01803 • 617 272-3000 Silicon Abrupt Silicon Hyperabrupt G a AS Abrupt G a AS Hyperabrupt Good Fair Best Good Fair Good Fair Best Fair Good Good Best VCO's for Tuned Synthesizers (A) Instruments & Telecommunication

varactor multiplier

Abstract: step recovery diodes
Contextual Info: MICROWAVE SILICON COMPONENTS CONTENTS • _ _ 2 4 • SYMBOLS _ • HIGH VOLTAGE PIN and NIP DIODES_ 5 - Silicon PIN switching and phase shifting diodes_8

RADIO TUNING DIODE

Abstract: gunn diodes
Contextual Info: an A M P com pany Varactor Controlled Local Oscillator/Mixer Assembly 20.59 - 24.21 GHz MA87882BM V3.00 Features • • • • • • • • • Low Conversion Loss Small and Lightweight Low AM/FM Noise Electronic Tuning Allows Automatic Frequency Control AFC

WR90

Abstract: transistor A 935 varactor diode 24V CL8300 Gunn Oscillator WR90 cl8630 radar gunn diode gunn effect 935 schottky diode Gunn Diode
Contextual Info: Microwave solid state tuning varactor diodes book 1 part 8 a c 11 h Ty p e No. Description q o £ M in. Capacitance R atio CT 0V C T 60V Capacitance at V r 4 V m in . m ax. <pF BXY53 BXY54 BXY6S Silico n planar epitaxial tuning devices SOD-31 N 4 .0 6 .5

sampling phase detector SPD

Abstract: SPD3465-012 SPD3510-XX SPD3465 SPD3472-020 Sampling Phase Detectors SPD3465-020 SPD-3471-012 SPD3471-012
Contextual Info: SPD 3400 Seríes Sampling Phase Detectors Features: • ■ Low Cost Design for Phase Locking Rugged, Modular, Hybrid Construction ■ Phase Locks VCO and DROs up to 20GHz Wide Frequency Range Available for Signal Levels from -3 dBm to +13 dBm Hermetic Version Available

MSPD2018

Abstract: m21 sot23 transistor MSPD1012-H50 MSPD1000-E50/E50SM mpn7620-et47 MSPD1012-E50 mpn7610 mbd1057 MMD0840 MPN7345
Contextual Info: Microwave Diodes Schottky Varactor PIN Step Recovery Planar Tunnel MOS / MIS Capacitors Short Form Catalog 2006 About Aeroflex / Metelics The Experience and Resources to Deliver the Technological Edge In many electronics applications, there is simply no margin for

SC9100-007

Abstract: GMV9823-000 ATN3584-02 DMK2308 AA038P5-00
Contextual Info: Millimeterwave 1C and Discrete Semiconductor Products Selection Guide EBAlpha Low Noise Am plifiers Die Size mm Noise Figure (dB) Gain (dB) Pi dB (dBm) Bias (V) Ids (mA) Part Number Page Number 20-24 1.25X2.35 2.5 22.0 8.0 +4.5 (Self) 24 AA022N1-00 1-2 24-30

KV38S2

Abstract: KV3201 gc4700 UM7108 UM6606 GC4430 GC1210 GC4213 gc4213 transistor GC4731
Contextual Info: RF/MICROWAVE discretes & modules Microsemi R TM more than solutions - enabling possibilities Solutions l l l l l l l l Microwave Links Base stations Military/avionics Medical/MRI Radar/phase shifters Space / satellite applications V Sat terminals Land mobile radios

Contextual Info: Aerospace and Defense Solutions Aerospace and Defense Solutions Table of Contents Aerospace and Defense Product Overview . . . . . . . . 3 Certifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 High Reliability Screening Capabilities . . . . . . . . . . . . 5

ultrasonic bond

Abstract: schematic WELDER Gunn Diode schematic WELDER capacitor M541 varactor beam lead thermal conductive teflon mesa similar
Contextual Info: Application Note M an A M P com pany Bonding and Handling Procedures for Chip Diode Devices M541 V 2.00 Discussion Microstrip Packages and Chip Carriers Chip diode devices for use in integrated circuit and hybrid integrated circuits have proliferated in the last

schematic WELDER

Abstract: gold melting furnace ultrasonic bond
Contextual Info: Bonding and Handling Procedures for Chip Devices DISCUSSION Chip diode devices for use in integrated circuit and hybrid integrated circuits have proliferated in the last few years. Today's circuit designer is faced with a multiplicity of alter­ natives in the selection of diodes and packaging with each

Contextual Info: Pgfltt G E C P L E S S E Y DS3410-1.2 DC4600/4700 Series GaAs HYPERABRUPT TUNING VARACTORS The introduction of hyperabrupt junction varactors brings the advantages of linear electronic tuning to the microwave circuit designer. GEC Plessy Semiconductors Microwave's