VAILABLE111 Search Results

F2683

Contextual Info: That HEWLETT mi/LMPACKARD 2-16 GHz General Purpose Gallium Arsenide FET Technical Data A TF-26836 F e a tu r e s D escrip tio n • High Output Power: 18.0 dBm Typical Pj dB at 12 GHz The ATF-26836 is a high perfor­ mance gallium arsenide Schottkybarrier-gate field effect transistor

Contextual Info: fX J !« H EW L E T T wLt M PA CK A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0786 Features Description • C ascadable 50 Q Gain B lock The MSA-0786 is a high perfor­ m ance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a low cost,

Contextual Info: What mLUM HEW LETT PACKARD Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41486 Features • Low N oise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz • High A ssociated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz

Contextual Info: W hnì HEW LETT m L'fià P A C K A R D 2 -1 6 GHz Low N oise Gallium Arsenide FET Technical Data ATF-13336 Features D escription • Low N oise Figure: 1.4 dB Typical at 12 GHz The ATF-13336 is a high perfor­ mance gallium arsenide Schottkybarrier-gate field effect transistor

P 1060 atf

Contextual Info: W hat H E W L E T T * mLliM P A C K A R D 0 .5 -6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-21186 F e atu re s D escription • Low N oise Figure: 0.5 dBTyp. @ 2 GHz • High Output Pow er: 19 dBmTyp. PldB @ 2 GHz • High MSG: 13.5 dBTyp. @ 2 GHz

ATF-13736

Contextual Info: Whpl H E W L E T T müHM PA C K A R D 2 -1 6 GHz Low N oise Gallium Arsenide FET Technical Data ATF-13736 Features D escription • Low N oise Figure: 1.8 dB Typical at 12 GHz The ATF-13736 is a high perfor­ m ance gallium arsenide Schottkybarrier-gate field effect transistor

Contextual Info: W TM H E W L E T T WL'Em P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0486 Features D escription • Cascadable 50 Q Gain Block The MSA-0486 is a high perfor­ mance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a low cost,

Contextual Info: T hal H E W L E T T mHiiM PA C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0986 F eatures D escription • Broadband, Minimum Ripple Cascadable 50 Q Gain Block The MSA-0986 is a high perfor­ m ance silicon bipolar M onolithic M icrowave Integrated Circuit

AT42086-BLK

Contextual Info: What H E W L E T T * mLliM P A C K A R D Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42086 Features • High Output Power: 20.5 dBm Typical PldB at 2.0 GHz • High Gain at 1 dB Compression: 13.5dBTypicaIGldBat2.0 GHz • Low N oise Figure:

Contextual Info: What H E W L E T T * mLliM PACKARD Up to 6 GHz Low N oise Silicon Bipolar Transistor Technical Data AT-41486 Features • Low N oise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz • High A ssociated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz

Contextual Info: What H E W L E T T * mLliM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0986 Features Description • Broadband, Minimum Ripple Cascadable 50 Q. Gain Block The MSA-0986 is a high perfor­ mance silicon bipolar Monolithic Microwave Integrated Circuit

ST Z0 103 MA

Contextual Info: What HEW LETT* mLliM PACKARD 2-1 6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26884 F e atu res • High Output Pow er: 18.0 dBm Typical Pi ¿s at 12 GHz • High Gain: 9.0 dB TypicalGssat 12 GHz • Low C ost P lastic Package • Tape-and-Reel Packaging

41411

Abstract: transistor 41 74t transistor 45 f 122
Contextual Info: Thal h e w le tt mL'fiÆ PACKARD « Surface M ount Low N oise Silicon Bipolar Transistor Chip Technical Data AT-41411 Features • Low N oise Figure: 1.4 dB Typical at 1.0 GHz 1.8 dB Typical at 2.0 GHz • High A ssociated Gain: 18.0 dB Typical at 1.0 GHz

chip die npn transistor

Abstract: marking 4110 sot
Contextual Info: What H E W L E T T * mLliM PACKARD Surface Mount Low N oise Silicon Bipolar Transistor Chip Technical Data AT-41411 Features • Low N oise Figure: 1.4 dB Typical at 1.0 GHz 1.8 dB Typical at 2.0 GHz • High A ssociated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz

Contextual Info: What HEWLETT* mLliM PACKARD 2-1 6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26836 F e atu res D escription • High Output Pow er: 18.0 dBm Typical Pi ¿s at 12 GHz The ATF-26836 is a high perfor­ mance gallium arsenide Schottkybarrier-gate field effect transistor

sot303

Contextual Info: Wfiït mitÍM HP AECWKLAERTDT Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • Amplifier Tested 900 MHz Performance: 1.3 dB NF,

Contextual Info: Who HEW LAR ETDT mL'fiIM PACK Low Current, High Perform ance NPN Silicon Bipolar Transistor Technical Data AT-32063 F eatures Description • High Perform ance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains tw o high

Contextual Info: f T C f HEW LETT K“KM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0486 Features Description • C ascadable 50 Q Gain B lock The MSA-0486 is a high perfor­ mance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a low cost,

MSA0986-BLK

Contextual Info: r /RiH E W L E T T m LiLm P a c k a r d Cascadable Silicon Bipolar MMIC A m plifier Technical Data MSA-0986 Features Description • B roadband, Minimum Ripple Cascadable 50 Q Gain Block T he MSA-0986 is a high p e rfo r­ m ance silicon b ip o la r M onolithic