V75 MARKING Search Results

V75 marking

Contextual Info: NEC's C TO Ku BAND SUPER LOW NOISE AND NE3503M04 HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • SUPER LOW NOISE FIGURE AND HIGH ASSOCIATED GAIN: NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz • FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD

V75 marking

Abstract: NE3503M04-A transistor marking v75 ghz LNB ku band HS350 NE3503M04 NE3503M04-T2-A m04 marking V75 4pin
Contextual Info: NEC's C TO Ku BAND SUPER LOW NOISE AND NE3503M04 HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • SUPER LOW NOISE FIGURE AND HIGH ASSOCIATED GAIN: NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz • FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD

marking code V75

Contextual Info: Tel : Fax : email : 0044 0 118 979 1238 0044 (0)118 979 1283 info@actcrystals.com ACT CM75LJ and CM53LJ Series of low jitter VCXO The ACTCM family of VCXO'S are part of ACT's low jitter family of oscillators. These 6 pad miniature SMD VCXO are offered in 7 x 5 mm and 5 x 3.2mm ceramic seam sealed packages. They are available with HCMOS,

SCR 2N5060 applications

Abstract: 2n5060 SCR 2N5060 2N5061G 102c marking 2n5062
Contextual Info: 2N5060 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.

transistor marking v75 ghz

Abstract: NE3503M04 PG10456EJ01V1DS HS350 NE3503M04-T2 nec marking power amplifier nec microwave m04 marking NE3503
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz

transistor marking v75 ghz

Abstract: nec microwave transistor v75 NE3503M04-A HS350 NE3503M04 NE3503M04-T2 NE3503M04-T2-A LNB ku band V75 marking
Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain <R> NF = 0.45 dB TYP., Ga = 12.0 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz

transistor marking v75 ghz

Abstract: nec microwave Ku BAND SUPER LOW NOISE type c NE3503M04 NE3503M04-A NE3503M04-T2 HS350 NE3503M04-T2-A V75 4pin
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain <R> NF = 0.45 dB TYP., Ga = 12.0 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz

microwave office

Abstract: transistor marking v75 ghz nec microwave
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz

transistor marking v75 ghz

Abstract: transistor v75
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz

transistor marking v75 ghz

Abstract: LNB ku band NE3503M04-T2B NE3503M04 NE3503M04-A HS350
Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain <R> NF = 0.45 dB TYP., Ga = 12.0 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz

NE3503M04

Abstract: s parameter of transistor ne3503m04 transistor marking v75 ghz NE3503M04-A HS350 NE3503M04-T2 NE3503M04-T2-A
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

TLP358H

Abstract: 11-10C4S TLP358
Contextual Info: TLP358H Photocouplers GaAℓAs Infrared LED & Photo IC TLP358H 1. Applications • Transistor Inverters • MOSFET Gate Drivers • IGBT Gate Drivers • Induction Cooktop and Home Appliances 2. General The TLP358H is a photocoupler in a DIP8 package that consists of a GaAℓAs infrared light-emitting diode LED

rjge

Contextual Info: bELT/1 APE' 'IFI-l'.-.TION FOR .-.PPF: '\-.L Rev.: C C u s to m e r P a r t No.: Delta P a r t No.: RJGE-12BF5290DR P a r t Name: RJ45 ICM LAN FILTER IN CONNECTER" 12 PORT (RoHS COMPLIANT 4. M ech anical D im ension: G reen/Y ellow LED 0O.45[0O.O18] Unit : m m /in c h

Contextual Info: TLP358HF Photocouplers GaAℓAs Infrared LED & Photo IC TLP358HF 1. Applications • Transistor Inverters • MOSFET Gate Drivers • IGBT Gate Drivers • Induction Cooktop and Home Appliances 2. General The TLP358HF is a photocoupler in a DIP8 package that consists of a GaAℓAs infrared light-emitting diode LED

TLP358H

Contextual Info: TLP358HF Photocouplers GaAℓAs Infrared LED & Photo IC TLP358HF 1. Applications • Transistor Inverters • MOSFET Gate Drivers • IGBT Gate Drivers • Induction Cooktop and Home Appliances 2. General The TLP358HF is a photocoupler in a DIP8 package that consists of a GaAℓAs infrared light-emitting diode LED

TLP358

Contextual Info: TLP358 Photocouplers GaAℓAs Infrared LED & Photo IC TLP358 1. Applications • Transistor Inverters • MOSFET Gate Drivers • IGBT Gate Drivers • Induction Cooktop and Home Appliances 2. General The TLP358 is a photocoupler in a DIP8 package that consists of a GaAℓAs infrared light-emitting diode LED

Contextual Info: TLP358H Photocouplers GaAℓAs Infrared LED & Photo IC TLP358H 1. Applications • Transistor Inverters • MOSFET Gate Drivers • IGBT Gate Drivers • Induction Cooktop and Home Appliances 2. General The TLP358H is a photocoupler in a DIP8 package that consists of a GaAℓAs infrared light-emitting diode LED

W6 13A Diode

Abstract: 930 18a motorola zener 2a7 Motorola 581 1A6 Zener 139 v91 T 348 opto marking 314
Contextual Info: M O T O R O L A SC D I ODE S/ OPT O b3b7SSS 0DÔ1337 T 5SE D Order this data sheet by 1.5SMC6.8/D MOTOROLA SEMICONDUCTOR T-//-A 3 TECHNICAL DATA 1.5SMC6.8, A thru 1.5SMC200, A Zener O vervoltage Transient Su p p re ssors . the 1.5SM C6.8 series is designed to protect voltage sensitive com ponents from high

Contextual Info: MOTOROLA SC DIODES/OPTO b 3b ? 5 5 S 0 0 0 1 3 m 25E D 1 Order this data sheet by P6SMB6.8/D MOTOROLA SEM IC O N D U C T O R mmm T -il' TECHNICAL DATA P6SIVIB6.8,A Zen er O v e rv o lta g e T ran sie n t S u p p r e s s o rs thru P6SM B200,A The P6SMB6.8 series is designed to protect voltage sensitive components from high

Contextual Info: MOTOROLA SC DIODES/OPTO 5S E b3b7SSS D 0DÔ1337 T Order this data sheet by 1.5SMC6.8/D MOTOROLA SEMICONDUCTOR T-//-A3 TECHNICAL DATA 1.5SMC6.8, A thru 1.5SMC200, A Zener Overvoltage Transient Su ppressors . . . the 1 .5 S M C 6 .8 se rie s is d e sig n e d to protect vo lta ge sensitive c o m p o n e n ts from high

SC-7415

Contextual Info: INTEGRATED CIRCUITS DATA SHEET 74LVC1G57 Low-power configurable multiple-function gate Product specification 2004 Jun 30 Philips Semiconductors Product specification Low-power configurable multiple-function gate 74LVC1G57 FEATURES DESCRIPTION • Wide supply voltage range from 1.65 to 5.5 V

IDT8N4S270

Abstract: Marking code mps
Contextual Info: IDT8N4S270 LVDS Frequency-Programmable Crystal Oscillator DATASHEET General Description Features The IDT8N4S270 is a Factory Frequency-Programmable Crystal Oscillator with very flexible frequency programming capabilities. The device uses IDT’s fourth generation FemtoClock NG technology for

Contextual Info: LVDS Frequency-Programmable Crystal Oscillator IDT8N4S270 DATASHEET General Description Features The IDT8N4S270 is a Factory Frequency-Programmable Crystal Oscillator with very flexible frequency programming capabilities. The device uses IDT’s fourth generation FemtoClock NG technology for

IDT8N4DV85

Contextual Info: LVDS Dual-Frequency Programmable VCXO IDT8N4DV85 DATASHEET General Description Features The IDT8N4DV85 is a LVDS Dual-Frequency Programmable VCXO with very flexible frequency and pull-range programming capabilities. The device uses IDT’s fourth generation FemtoClock NG