V601 Search Results

V60100C

Contextual Info: V60100C New Product Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.360 V at IF = 5 A FEATURES • Trench MOS Schottky Technology TO-220AB • Low forward voltage drop, low power losses • High efficiency operation

Contextual Info: New Product V60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses TO-220AB • High efficiency operation

Contextual Info: V60170G www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses • High efficiency operation

Contextual Info: New Product V60120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses • High efficiency operation

V60100C

Contextual Info: New Product V60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses TO-220AB • High efficiency operation

Contextual Info: New Product V60120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses • High efficiency operation

V60100C

Contextual Info: V60100C New Product Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.360 V at IF = 5 A FEATURES • Trench MOS Schottky Technology TO-220AB • Low forward voltage drop, low power losses • High efficiency operation

Contextual Info: New Product V60120C, VB60120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses TO-263AB

Contextual Info: V60100PW www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 10 A FEATURES TMBS • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation

Contextual Info: New Product V60100C & VB60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS TO-220AB TO-263AB • Low forward voltage drop, low power

Contextual Info: V60170PW-M3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 10 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses • High efficiency operation

V60100C

Contextual Info: New Product V60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses TO-220AB • High efficiency operation

V60100C

Abstract: VB60100C JESD22-B102 J-STD-002 7030D
Contextual Info: New Product V60100C & VB60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS TO-220AB TO-263AB • Low forward voltage drop, low power losses

Contextual Info: * / I Te x a s In s t r u m e n t s LM V601/LM V602/LM V604 1 MHz, Low Power General Purpose, 2.7V Operational Amplifiers General Description Features The V601/LMV602/LMV604are single, dual, and quad low voltage, low power Operational Amplifiers. They are designed

Contextual Info: V60170G-M3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses • High efficiency operation

J-STD-002

Contextual Info: New Product V60120C, VB60120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses TO-263AB

Contextual Info: V60120C New Product Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.402 V at IF = 5 A FEATURES • Trench MOS Schottky Technology TO-220AB • Low forward voltage drop, low power losses • High efficiency operation

Contextual Info: PN-V601 LCD MONITOR Ultra-Slim Bezel Creates New Multi-Screen World Designed for video wall applications, the PN-V601 boasts an ultra-slim bezel on a 60-inch professional LCD monitor and can be used in a variety of signage and multi-screen configurations. As a flexible solution with an almost seamless bezel,

photovoltaic sensor

Abstract: photovoltaic cell sensor PDB-C601-2 photovoltaic photoconductive
Contextual Info: PHOTONIC Silicon Photodiode, Blue Enhanced Solderable Chips Photoconductive Type PDB-C601 Photovoltaic Type PDB-V601 DETECTORS INC. PACKAGE DIMENSIONS INCH mm 0.125 [3.18] 0.125 [3.18] 0.125 [3.18] 1.250 [31.75] 0.050 [1.27] 0.030 [0.76] 1.00 [25.4] 0.030 [0.76]

Photodiode Solderable Chip

Abstract: PDB-V601-1 photovoltaic Silicon Photodiode Solderable Chip
Contextual Info: Solderable Silicon Photodiodes PDB-V601-1 PACKAGE DIMENSIONS INCH [mm] CHIP DIMENSIONS INCH [mm] .021 [0.53] .014 [0.36] .030 [0.76] .040 [1.02] .125 [3.18] .074 [1.88] ACTIVE AREA CHIP DIMENSIONS INCH [mm] .022 [0.56] ACTIVE AREA SOLDERABLE PHOTODIODE BARE SHIP PACKAGE

Contextual Info: V60120C, VB60120C www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS TO-220AB • Low forward voltage drop, low power losses

V60100PW-M3/4W

Abstract: J-STD-002 diode package outline V60100PW
Contextual Info: New Product V60100PW Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 10 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses • High efficiency operation

V60100

Abstract: V60100C
Contextual Info: New Product V60100C & VB60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS TO-220AB TO-263AB • Low forward voltage drop, low power

Contextual Info: New Product V60120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses • High efficiency operation