V6 DIODE Search Results

MA4E2054E-1068T

Abstract: LG diode 831 MA4E2054A-287T MA4E2054B MA4E2054B-287T MA4E2054 equivalent of v6 surface mount diode DIODE 1581
Contextual Info: Also Offering RoHS Compliant Equivalent Parts MA4E2054 Series V6 Surface Mount Low Barrier Schottky Diode Features • Low IR <100nA @ 1V, <500nA @ 3V • Designed for High Volume, Low Cost Detector and Mixer Applications • High Detector Sensitivity: -55 dBm TSS

MA4P274-1141T PIN Diodes

Abstract: diode V6 Ma4P45 MA4P7436-1141T diode 14-V6 MA4P7447-287T
Contextual Info: Also Offering RoHs Compliant Equivalent Parts Surface Mount Plastic PIN Diodes SMPP Series V6 Features • Industry Standard Surface Mount Packages • Lead-Free RoHS Compliant Equivalents Available with 260 °C Reflow Compatibility • Low Loss, High Isolation Switching Diodes

MA4P7436ST-287T

Abstract: MA4P7436-1141T MA4P7447-287T MA4P7437ST-1146T
Contextual Info: Also Offering RoHs Compliant Equivalent Parts Surface Mount Plastic PIN Diodes SMPP Series V6 Features • Industry Standard Surface Mount Packages • Lead-Free RoHS Compliant Equivalents Available with 260 °C Reflow Compatibility • Low Loss, High Isolation Switching Diodes

diode V6 96

Abstract: MA4PH301
Contextual Info: Axial Leaded Glass PIN Diodes Multi Purpose Axial Leaded Glass PIN Diodes RoHs Compliant V6 Glass Package Styles Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ Glass Hermetically Sealed Packages Large Signal Switch Design Available in Low Capacitance Passivated Chip for Low Leakage Current

Contextual Info: MA4SW410 HMIC Silicon SP4T PIN Diode Switch RoHS Compliant V6 Features ♦ Broad Bandwidth ♦ Specified from 50 MHz to 20 GHz ♦ Usable from 50 MHz to 26.5 GHz ♦ Lower Insertion Loss and Higher Isolation than Comparable pHEMT or Discrete Component Designs

Contextual Info: MA4SW110 MA4SW210 MA4SW310 HMIC Silicon PIN Diode Switches RoHS Compliant M/A-COM Products Rev. V6 Features ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50MHz to 20GHz Usable from 50MHz to 26.5GHz Lower Insertion Loss and Higher Isolation than Comparable pHempt Designs

diode marking v6

Abstract: marking V6
Contextual Info: LESHAN RADIO COMPANY, LTD. Variable Capacitance Diode for VCXO HVC365 FEATURES 1 • High capacitance ratio and good C-V linearity. • Ultra small Flat Package UFP is suitable for surface mount design. 2 SOD– 523 1 CATHODE 2 ANODE DEVICE MARKING HVC365 = V6

Contextual Info: MADP-042XX5-13060 Series SURMOUNTTM PIN Diodes: RoHS Rev. V6 Features •        Surface Mount No Wirebonds Required Rugged Silicon-Glass Construction Silicon Nitride Passivation Polymer Scratch Protection Low Parasitic Capacitance and Inductance

MASW-000553-13220G

Abstract: macom rf switch MASW-000553 macom pin diode application
Contextual Info: MA4AGSW3 SP3T AlGaAs PIN Diode Switch Rev. V6 FEATURES ♦ Ultra Broad Bandwidth: 50 MHz to 50 GHz ♦ Functional Bandwidth : 50 MHz to 70 GHz ♦ 0.8 dB Insertion Loss, ♦ 31 dB Isolation at 50 GHz ♦ Low Current consumption. • -10mA for low loss state

Contextual Info: MA4AGSW1A SPST Non-Reflective AlGaAs PIN Diode Switch V6 FEATURES •     Ultra Broad Bandwidth : 50 MHz to 50 GHz Functional Bandwidth : 50 MHz to 70 GHz 0.5 dB Insertion Loss at 50GHz 46 dB Isolation at 50 GHz Low Current consumption

060inches

Abstract: in402 MA4P4006B-402
Contextual Info: MA4P HIPAX High Power PIN Diodes RoHs Compliant Rev. V6 Package Styles Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ High Power Handling Low Loss / Low Distortion Voltage Ratings up to 1000 Volts Passivated Chip for Low Leakage Current Low Theta θ Due to Full Face Chip Bonding

Contextual Info: MA4P HIPAX High Power PIN Diodes RoHs Compliant Rev. V6 Package Styles Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ High Power Handling Low Loss / Low Distortion Voltage Ratings up to 1000 Volts Passivated Chip for Low Leakage Current Low Theta θ Due to Full Face Chip Bonding

MA4E2054

Abstract: IR 1261 MA4E2054L-1261
Contextual Info: RoHS Compliant MA4E2054L-1261 V6 Low Barrier Schottky Chip Features • Low IR <100nA @ 1V, <500nA @ 3V • Designed for High Volume, Low Cost Detector and Mixer Applications • Low Noise Figure: 5.7 dB (SSB) at X-Band • High Detector Sensitivity: -55 dBm TSS

macom MA46

Abstract: ODS-1056
Contextual Info: MA46 Series Surface Mount GaAs Tuning Varactors M/A-COM Products Rev. V6 Features • Constant Gamma Abrupt Junction: 0.5 Hyperabrupt Junctions: 0.75, 1.25 and 1.5 • Low Cost • Surface Mount Packages • Very High Quality Factor • Capacitance Ratio to 10:1

Contextual Info: MA4ST079 thru MA4ST083 Series Surface Mount Hyperabrupt Wide-Band Tuning Varactors M/A-COM Products Rev. V6 Features SOT-23 • • • • • • Low Cost Very High Capacitance Ratio from 1 to 8 Volts Surface Mount Package High Quality Factor Useful for Battery Applications

marking code V6 diode

Abstract: V6 marking code diode SMD Diode V6 marking code V67D marking code V6 rectifier DIODE D1F60 diode marking v6 V6 7D marking code V6 7d marking v6 diode
Contextual Info: 面実装デバイス 単体型 Rectifier Diode Surface Mounting Device Single Diode •外観図 OUTLINE D1F60 Unit : mm Weight : 0.058g （typ.） Package：1F 600V 1A 特長 ① • 耐湿性に優れ高信頼性 Feature V6 7D カソードマーク

Contextual Info: MASW-002103-1363 HMICTM Silicon PIN Diode SPDT Switch 50 MHz - 20 GHz Rev. V6 Features •           Specified from 50 MHz to 20 GHz Usable up to 26 GHz Low Insertion Loss High Isolation Low Parasitic Capacitance and Inductance

A1425A-3

Contextual Info: ACT3PCI.fm v6 Page 1 Tuesday, August 12, 1997 11:17 AM Accelerator Series FPGAs: ACT 3 PCI-Compliant Family F e atures • Up to 10,000 Gate Array Equivalent Gates. • Up to 250 MHz On-Chip Performance. • 9.0 ns Clock-to-Output. • Up to 1,153 Dedicated Flip-Flops.

Contextual Info: MASW-002103-1363 HMICTM Silicon PIN Diode SPDT Switch 50 MHz - 20 GHz Rev. V6 Features •           Specified from 50 MHz to 20 GHz Usable up to 26 GHz Low Insertion Loss High Isolation Low Parasitic Capacitance and Inductance

M513

Abstract: MD54-0006 MD54-0006SMB MD54-0006TR
Contextual Info: Low Cost MMIC Mixer, 1400 - 2100 MHz MD54-0006 V6 Features • • • • • • Functional Block Diagram +12 dBm Input Power @ 1 dB Compression High Isolation, 28 dB LO to RF +3 to +8 dBm LO Drive Level DC - 500 MHz 3 dB IF Bandwidth Does not require DC bias

marking code v6 SOT23

Abstract: V6 marking code marking code V6 DIODE MC74VHC04 MC74VHC1G04 MC74VHC1GU04 MC74VHCU04 SC-88A inverter SOt23-5 footprint wave soldering
Contextual Info: MC74VHC1GU04 Single Unbuffered Inverter http://onsemi.com MARKING DIAGRAMS 5 5 1 SC−88A/SOT−353/SC−70 DF SUFFIX CASE 419A V6 M G G M The MC74VHC1GU04 is an advanced high speed CMOS Unbuffered inverter fabricated with silicon gate CMOS technology. This device consists of a single unbuffered inverter. In combination

Contextual Info: MC74VHC1GU04 Single Unbuffered Inverter http://onsemi.com MARKING DIAGRAMS 5 5 1 SC−88A/SOT−353/SC−70 DF SUFFIX CASE 419A V6 M G G M The MC74VHC1GU04 is an advanced high speed CMOS Unbuffered inverter fabricated with silicon gate CMOS technology. This device consists of a single unbuffered inverter. In combination

Contextual Info: S G S- THÔMS ON r — M2E ]> 7 c] 2 ci 2 3 7 003332*4 G '^ S G T H T-V6-09-05 T74LS95B SGÔ-THOMSON *[^ i[LI Tr[F3®!0(gS 4-BIT SHIFT REGISTER • SYNCHRONOUS, EXPANDABLE SHIFT RIGHT ■ SYNCHRONOUS, SHIFT LEFT CAPABILITY ■ SYNCHRONOUS, PARALLEL LOAD

MICRON POWER RESISTOR Mos

Contextual Info: 4 - A C T 3P C L fm v6 P a g e l Tuesday, August 12, 1997 11:17 AM Accelerator Series FPGAs: PCT 3 PQ-Gompliant Family £g"b£ t ta «1 fttlM IHs «5 • Up to 10,000 Gate Array Equi\alent Gates. FEghly Predictable, Synthesis-Friendly Architecture Supports FEgh-Level Design IVfethodologies.