V53C808L Search Results

Contextual Info: MO SEL V I T E L I C V53C808L H IG H P ER FO R M A NC E 3.3 VOLT 1M x 8 ED O PA G E M O D E CM OS DYNAM IC R A M HIGH PERFORMANCE PR ELIM INA R Y 35 40 45 50 Max. RAS Access Time, tp^c 35 ns 40 ns 45 ns 50 ns Max. Colum n Address Access Time, (tQ ^ ) 18 ns

808-H-0.4

Abstract: ttl 7032 V53C808H V53C808L rcd 160 5 120 ohm
Contextual Info: MOSEL VITELIC PRELIMINARY V53C808L HIGH PERFORMANCE 3.3 VOLT 1M x 8 EDO PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE 35 40 45 50 Max. RAS Access Time, tRAC 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (tCAA) 18 ns 20 ns 22 ns 24 ns Min. Extended Data Out Mode Cycle Time, (tPC)

Contextual Info: MOSEL V I T E L 1C V 53C 808L H IG H P E R F O R M A N C E 3 .3 V O LT 1 M x 8 E D O P A G E M O D E C M O S D Y N A M IC R A M HIGH PERFORMANCE P R E L IM IN A R Y 35 40 45 50 Max. RAS Access Tim e, tRAC 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (tCAA)