V202 Search Results

Contextual Info: V202BB60 Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage3.3k V(RMS) Max. Applied Voltage2.0k V(DC) Max. Applied Voltage2.5k I(TM) Max.(A) Peak Current70k V(C) Nom. (V) Clamping Voltage5.2k @I(PP) (A) (Test Condition)200 W(TM) Max.(J) Transient Energy7.5k

50435

Contextual Info: r PRODUCT NUMBER SEE SHEET 2 *C I3 -U N f l | * S’ <i u Z El i 5«M * I ¥ i l l l i ­ bs ; i ! 3 Ii t£ K J Ll *!i n «I si a ç * ! C O N FID E N TIA L mat'l. code NOTE 3 dr Itr ecn no “ 54 11* ! i ! B L linear RDS 1 0 /2 4 /9 1 V20224 MRC 3 /2 /9 2

Contextual Info: New Product V20200G, VF20200G, VB20200G & VI20200G Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.62 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power

VB20200G

Abstract: J-STD-002
Contextual Info: New Product V20200G, VF20200G, VB20200G & VI20200G Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.62 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power

Contextual Info: New Product V20200C, VF20200C, VB20200C & VI20200C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology • Low forward voltage drop, low power

Contextual Info: V20202C, VF20202C, VB20202C, VI20202C www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology generation 2 TO-220AB ITO-220AB

V20200

Abstract: J-STD-002 VB20200C v20200c
Contextual Info: New Product V20200C, VF20200C, VB20200C & VI20200C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology • Low forward voltage drop, low power

Contextual Info: V20202G-M3, VB20202G-M3, VI20202G-M3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.61 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology generation 2 TO-220AB • Low forward voltage drop, low power losses

Contextual Info: 3 PRODUCT NUMBER SEE SHEET 2 -.485 [1 2 .3 2 ] REF. £7 .002:1 TTt t t +t t TT+TT .462 [1 1 .7 3 ] -B-I rIi i r f REF. q ir L •nr CONFIDENTIAL mat'l. code NOTE 3 dr Itr sheet index tolerances unless otherwise specified date 1 0 /2 4 /9 1 V12 79 5 ROS V20224

Contextual Info: V20200G, VF20200G, VB20200G, VI20200G www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.62 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses

Contextual Info: V202CA60 Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage3.3k V(RMS) Max. Applied Voltage2.0k V(DC) Max. Applied Voltage2.5k I(TM) Max.(A) Peak Current70k V(C) Nom. (V) Clamping Voltage5.2k @I(PP) (A) (Test Condition)200 W(TM) Max.(J) Transient Energy7.5k

Contextual Info: New Product V20200G, VF20200G, VB20200G, VI20200G Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.62 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power

Contextual Info: V20202C-M3, VB20202C-M3, VI20202C-M3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology generation 2 TO-220AB • Low forward voltage drop, low power losses

vb20200c

Abstract: V20200C vf20200c J-STD-002
Contextual Info: New Product V20200C, VF20200C, VB20200C & VI20200C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology • Low forward voltage drop, low power

Contextual Info: New Product V20200G, VF20200G, VB20200G & VI20200G Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.62 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power

vb20200g

Abstract: J-STD-002
Contextual Info: New Product V20200G, VF20200G, VB20200G & VI20200G Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.62 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power

Contextual Info: New Product V20200C, VF20200C, VB20200C & VI20200C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology • Low forward voltage drop, low power

V2020

Abstract: vb20200c
Contextual Info: New Product V20200C, VF20200C, VB20200C & VI20200C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power

J-STD-002

Contextual Info: New Product V20200C, VF20200C, VB20200C & VI20200C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power

Contextual Info: V20200C, VF20200C, VB20200C, VI20200C www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses

67201A

Contextual Info: T em ic M67201A/M67202A S e m i c o n d u c t o r s 512 x 9 & 1 K x 9 CMOS Parallel FIFO Introduction T he M 67201A /202A im plem ent a first-in first-out algorithm , featuring asynchronous read/w rite operations. T he FU LL and E M PTY flags prevent data overflow and

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD160040B 384-OUTPUT TFT-LCD SOURCE DRIVER COMPATIBLE WITH 256-GRAY SCALE DESCRIPTION The µPD160040B is a source driver for TFT-LCDs capable of dealing with displays with 256-gray scale. Data input is based on digital input configured as 8 bits by 6 dots (2 pixels), which can realize a full-color display of 16,777,216

ftdi d2xx program guide

Abstract: FT2232H 24lc256 datasheet ft4232 24LC256 93C46 AN-108 AN2232C-02 FT4232H 24LC256 so
Contextual Info: Future Technology Devices International Ltd. Application Note AN_113 Interfacing FT2232H Hi-Speed Devices To I2C Bus Document Reference No.: FT_000137 Version 1.0 Issue Date: 2009-05-08 . Future Technology Devices International Limited FTDI Unit 1,2 Seaward Place, Glasgow G41 1HH, United Kingdom

V70H

Abstract: V30L BPF H287BSJS-4438HWD ccd bm AN3501NFBP QFH084-P-1818B V30M XO 18 CT20-18 V20-25P
Contextual Info: ICs for VCR AN3501NFBP Luminance, chroma and linear audio signal processing IC for VCR • Overview Unit: mm 21.2±0.2 18.0±0.2 63 43 42 84 22 0.6±0.2 0.80 0.35+0.1 –0.05 Seating plane ■ Features 0.1±0.1 1.55±0.1 3.25±0.2 21 0.15+0.1 –0.05 1 1.0