V09 DIODE Search Results
V09 DIODE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
CUZ12V |
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Zener Diode, 12 V, USC | Datasheet | ||
MUZ5V6 |
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Zener Diode, 5.6 V, USM | Datasheet | ||
CEZ6V8 |
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Zener Diode, 6.8 V, ESC | Datasheet |
V09 DIODE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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V09C
Abstract: V09G V09E v09 diode Hitachi DSA00515
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29MIN. 62MIN. V09C V09G V09E v09 diode Hitachi DSA00515 | |
V09GContextual Info: FAST RECOVERY DIODE V09 OUTLINE DRAWING V09C 200V V09E (400V) V09G (600V) Cathode band 29MIN. (1.14) Color of cathode band Type φ 0.8 (0.03) 5MAX (0.2) 62MIN. (2.44) 29MIN. (1.14) Direction of polarity Unit in mm(inch) Symbol(Blue) • For high speed switching. |
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62MIN. 29MIN. PDE-V09-0 V09G | |
Contextual Info: FAST RECOVERY DIODE V09 FEATURES OUTLINE DRAWING • For high speed switching. • Diffused-junction. Glass passivated and encapsulated. ABSOLUTE MAXIMUM RATINGS V09C V09E V09G Repetitive Peak Reverse Voltage V RRM V 200 400 600 Non-Repetitive Peak Reverse Voltage |
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PDE-V09-2 | |
V09G
Abstract: V09C V09E diode v09 hitachi
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29MIN. 62MIN. V09G V09C V09E diode v09 hitachi | |
V09G
Abstract: V09C v09 diode V09E
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62MIN. 29MIN. PDJ-V09-0 V09G V09C v09 diode V09E | |
Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AA REVISIONS D IS T 22 LTR DESCRIPTION C1 DATE REVISED PER E C Q -09- 024927 DWN APVD KK AEG 09N O V09 M A T E R IA L : |
OCR Scan |
ECO-09-024927 09NOV09 UL94V-0. 81//m[ 13JUN2005 31MAR2000 | |
FHF100-200_300-C_A_3D
Abstract: V09G i2t class CC
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OCR Scan |
1S2244 1S2246 1S224 22/iSec 600S2 FHF100-200_300-C_A_3D V09G i2t class CC | |
low capacitance surge protection dsl
Abstract: "low capacitance" "surge protection" dsl DSL70 SC-61A IEC61000-4-4 SP000362209
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DSL70 DSL70 B132-H9306-X-X-7600 low capacitance surge protection dsl "low capacitance" "surge protection" dsl SC-61A IEC61000-4-4 SP000362209 | |
one cell battery protection ic diagram
Abstract: DS2726 DS2726G
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10-Cell DS2726 DS2726 one cell battery protection ic diagram DS2726G | |
DS2726
Abstract: DS2726G 5cell
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10-Cell DS2726 DS2726G 5cell | |
DS2726
Abstract: DS2726G
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10-Cell DS2726 DS2726G | |
DS2726
Abstract: DS2726G cell balancing
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10-Cell DS2726 DS2726G cell balancing | |
transistor g23 mosfet
Abstract: FZj 111 TRANSISTOR BC 137 transistor g23 3576 transistor n channel mosfet marking Bc TRANSISTOR MARKING CODE A2S bf996 marking A1S TRANSISTOR SOT-23 marking g23
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OCR Scan |
BIAL66 ft-11 569-GS 000s154 hal66 if-11 transistor g23 mosfet FZj 111 TRANSISTOR BC 137 transistor g23 3576 transistor n channel mosfet marking Bc TRANSISTOR MARKING CODE A2S bf996 marking A1S TRANSISTOR SOT-23 marking g23 | |
Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST AA 22 R E VIS IO N S LTR DATE DWN APVD 13 JU N 2 0 0 5 JA SF DESCRIPTION A A1 REV PER EC 0S1 1 - 0 2 0 1 - 0 4 REVISED PER E C 0 - 0 9 - 0 2 4 9 2 7 |
OCR Scan |
3JUN2005 13JUN2005 24AUG05 31MAR2000 | |
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Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. R E VIS IO N S D IS T LOC ALL RIGHTS RESERVED. 00 AA LTR DATE DESCRIPTION B B' ECO—06 —0 0 9 2 3 8 DWN 22APR2006 REVISED PER E C 0 - 0 9 - 0 2 4 9 2 7 |
OCR Scan |
22APR2006 27/im 15JUN2005 31MAR2000 | |
Q62702-S506Contextual Info: SIPMOS N Channel MOSFET BSS 87 • SIPMOS - enhancement mode • Drain-source voltage Vbs = 240V • Continuous drain current l B = 0.29A • Drain-source on-resistance • Total power dissipation 8 ds «»> = 6.0Q PD - 1.0W Type Marking Ordering code for |
OCR Scan |
Q62702-S506 BSS87 Q62702-S506 | |
TA7609P
Abstract: TA7609 BV12
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OCR Scan |
TA7609P 315kHz DIP16-P-300A ICC15 200kO) TA7609P TA7609 BV12 | |
DHM3J120
Abstract: ZSH5MT27C ZSH5MAZ27 DHM3T30 hitachi V06 DHM3G80 DHM3 H114 ZSH5MT48C 7637-2 12V
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APL-7107R1 100VVZZ 100VV IRSM130A) 001500V 214kV DHM3J120 ZSH5MT27C ZSH5MAZ27 DHM3T30 hitachi V06 DHM3G80 DHM3 H114 ZSH5MT48C 7637-2 12V | |
Contextual Info: AZ420 MINIATURE GENERAL PURPOSE RELAY FEATURES • • • • • • • • • • Rugged construction for high reliability Life expectancy greater than 100 million operations DC coils to 115 V Power consumption as low as 25 mW per pole available Current sensitive and voltage sensitive coils available |
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AZ420 E43203 | |
ST141-A1
Abstract: Crossbar contact AZ421 AZ420 AZ429 C035 C045 C408 AZ421-101
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AZ420 E43203 ST141-A1 Crossbar contact AZ421 AZ420 AZ429 C035 C045 C408 AZ421-101 | |
irlm110Contextual Info: IRLM110A Advanced Power MOSFET FEATURES b v dss = 100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S on = ■ Lower Input Capacitance lD = 1.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 pA (Max.) @ VDS = 100V |
OCR Scan |
IRLM110A OT-223 7Tbm42 0Q3T17G 003b323 irlm110 | |
ST140-1
Abstract: AZ420 AZ421 C035 C045 C408 ST141-A1
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AZ420 E43203; 5/2/02W ST140-1 AZ420 AZ421 C035 C045 C408 ST141-A1 | |
Crossbar contact
Abstract: ST140 ST141-A1 AZ431 az420 az421 ST141 az421 transistor C408 diode C035
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AZ420 E43203; 8/21/08W Crossbar contact ST140 ST141-A1 AZ431 az420 az421 ST141 az421 transistor C408 diode C035 | |
Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC DIST AA 22 ALL RIGHTS RESERVED. R E VIS IO N S LTR DESCRIPTION A1 ORANGE YELLOW GREEN GREEN DATE REVISED PER E C Q - 0 9 - 0 2 4 9 2 7 DWN APVD |
OCR Scan |
27/zm 27//m DIA005 16JUN2005 |