V08J Search Results

PDE-V08-0

Abstract: 11AP V08g
Contextual Info: CONTROLLED AVALANCHE DIODE V08 OUTLINE DRAWING V08E 400V V08G (600V) V08J (800V) 29MIN. (1.14) Color of cathode band Type Cathode band φ 0.8 (0.03) 5MAX (0.2) 62MIN. (2.44) 29MIN. (1.14) Direction of polarity Unit in mm(inch) Blue Red Green Symbol(Red)

diode v08 hitachi

Contextual Info: CONTROLLED AVALANCHE DIODE V08 FEATURES OUTLINE DRAWING • Transient surge voltage protection. • Diffused-junction. Glass passivated and encapsulated. ABSOLUTE MAXIMUM RATINGS Items Type V08E V08G V08J 400 600 800 Repetitive Peak Reverse Voltage V RRM V

V08G

Abstract: V08J V08E 11AP
Contextual Info: CONTROLLED AVALANCHE DIODE V08 OUTLINE DRAWING Color of cathode band Type V08E 400V V08G (600V) V08J (800V) φ 0.8 (0.03) 5MAX (0.2) 62MIN. (2.44) • 逆サージパワー吸収用 •拡散接合形ガラスモールド構造 Cathode band 29MIN. (1.14)

PDE-V08-0

Abstract: V08G v08g c V08J V08E hitachi V08 Hitachi DSA00513 jl-80 diode v08 hitachi
Contextual Info: CONTROLLED AVALANCHE DIODE V08 OUTLINE DRAWING V08E 400V V08G (600V) V08J (800V) 29MIN. (1.14) Color of cathode band Type Cathode band φ 0.8 (0.03) 5MAX (0.2) 62MIN. (2.44) 29MIN. (1.14) Direction of polarity Unit in mm(inch) Blue Red Green Symbol(Red)

Hitachi V08G

Abstract: PDE-V08-0 V08G V08J V08E
Contextual Info: CONTROLLED AVALANCHE DIODE V08 OUTLINE DRAWING V08E 400V V08G (600V) V08J (800V) 29MIN. (1.14) Color of cathode band Type Cathode band φ 0.8 (0.03) 5MAX (0.2) 62MIN. (2.44) 29MIN. (1.14) Direction of polarity Unit in mm(inch) Blue Red Green Symbol(Red)

Contextual Info: CONTROLLED AVALANCHE DIODE 9! Unit in m m inch OUTLINE DRAWING D irectio n of p o larity •FEATURES • Transient surge voltage protection. • Diffused-junction. Glass passivated encapsulated. and Type Color of cath o d e band V08E(400V) Blue V08G(600V)

w584

Abstract: V068
Contextual Info: Specifications ispLSI and pLSI 3256 Lattice ispLSrand pLSI 3256 I Semiconductor I Corporation High Density Programmable Logic Features Functional Block Diagram H1GH-DENSITY PROGRAMMABLE LOGIC — 128 I/O Pins — 11000 PLD Gates — 384 Registers — High Speed Global Interconnect

SRT-2W6H

Abstract: SRK-12ZB U17E v08g c 113C 134B U17C U17D V07E SRT-2W6
Contextual Info: - 94 - f t * 5Ë fe i S 6J 1i I Í PI H ä it'JÆ m % t t € Prsm Vrsm Vr r m Io Vr Ifsm T £ # Vpmax I Rtnax Vz V * & < * m (kW) (V) (V) (V) (A) (°C> 200 0. 1 5 40a (A) S R —3 S R —3 B n S R —4 S R —4 200 SR-4 H * ' ) SRK-12ZB(T06) SRK-12ZBÍT07)

SRT-2W6H

Abstract: 134B v08g c 113C SRK-12ZB U17C U17D U17E V07E s 134b
Contextual Info: - 94- f t * 5Ë fe i S 6J 1i I Í PI H ä it'JÆ m % t t € Prsm Vrsm Vr r m Io Vr Ifsm T £ # Vpmax I Rtnax Vz V * & < * m (kW) (V) (V) (V) (A) (°C> 200 0. 1 5 40a (A) S R —3 S R —3 B n S R —4 S R —4 200 SR-4 H * ' ) SRK-12ZB(T06) SRK-12ZBÍT07)

SRT-2W6H

Abstract: SRK-12ZB A114C SRT 2w6H V08G 113C 134B U17C U17D U17E
Contextual Info: - 94 - ft * 5Ë fe i S 6J 1i I Í PI H ä it'JÆ m % t t € Prsm Vrsm Vr r m Io Vr I fsm T £ # Vpmax I Rt na x Vz V * &<* m (k W ) (V ) (V ) (V ) (A ) (°C> 20 0 0. 15 40a (A ) S R —3 S R —3 B n S R —4 S R —4 20 0 SR-4 H * ') SRK-12ZB(T06) SRK-12ZBÍT07)

SRT-2W6H

Abstract: SRK-12ZB U17E v08g c 113C 134B U17C U17D V07E SRT-2W6
Contextual Info: - 94 - ft * 5Ë fe i S 6J 1i I Í PI H ä it'JÆ m % t t € Prsm Vrsm Vr r m Io Vr I fsm T £ # Vpmax I Rt na x Vz V * &<* m (k W ) (V ) (V ) (V ) (A ) (°C> 20 0 0. 15 40a (A ) S R —3 S R —3 B n S R —4 S R —4 20 0 SR-4 H * ') SRK-12ZB(T06) SRK-12ZBÍT07)

j2kg

Abstract: JT-V
Contextual Info: 449fc>2Ub H i I ACH1 / O P TQ tLE C TR U TTTÜ S l— • 68C 0 9 8 0 0 T-OhtS K (Controlled Avalanche Diode 7 '< 17 V08 "bfl DE | -29MIN (1.14) MMTbaDS G Q tnflQ D 1 Jj (0.14) «*3.5 MAX (2.44) -62M IN5.0MAX C o lo r o f c ath o d e Type , M T n . u )1