V SOT323 Search Results

"UHF Transistors"

Abstract: ZUMTQ31A DSA0037349
Contextual Info: SOT323 NPN SILICON PLANAR VHF/UHF TRANSISTORS ZUMTQ31A ISSUE 1 – DECEMBER 1998 PARTMARKING DETAIL – T11 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 30 V Collector-Emitter Voltage V CEO 15 V Emitter-Base Voltage V EBO

SOT323

Abstract: ZUMTS20 DSA003735
Contextual Info: SOT323 NPN SILICON PLANAR VHF TRANSISTOR ISSUE 1 – DECEMBER 1998 ZUMTS20 ✪ PARTMARKING DETAIL — T3 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 30 V Collector-Emitter Voltage V CEO 20 V Emitter-Base Voltage V EBO

SOT323-5L

Abstract: STLQ50 STLQ50XX25 sot323xl
Contextual Info: STLQ50XX 50 mA, 3 µA supply current low drop linear regulator Features • 2.3 V to 12 V input voltage range ■ 50 mA maximum output current ■ 3 µA quiescent current ■ Available in 1.8 V, 2.5 V, 3.3 V, 5.0 V and adjustable SOT323-5L ■ 200 mV dropout voltage at 25 mA output

RESISTOR BF 0207

Abstract: STLQ50 STLQ50C50R
Contextual Info: STLQ50XX 50 mA, 3 µA supply current low drop linear regulator Features • 2.3 V to 12 V input voltage range ■ 50 mA maximum output current ■ 3 µA quiescent current ■ Available in 1.8 V, 2.5 V, 3.3 V, 5.0 V and adjustable SOT323-5L ■ 200 mV dropout voltage at 25 mA output

SOT323-5L

Abstract: STLQ50 STLQ50M25R STLQ50ADJ STLQ50M50R sot323xl 709 SOT23 OUTPUT 3.3V PACKAGE SOT323
Contextual Info: STLQ50XX 50 mA, 3 µA supply current low drop linear regulator Features • 2.3 V to 12 V input voltage range ■ 50 mA maximum output current ■ 3 µA quiescent current ■ Available in 1.8 V, 2.5 V, 3.3 V, 5.0 V and adjustable SOT323-5L ■ 200 mV dropout voltage at 25 mA output

Contextual Info: STLQ50XX 50 mA, 3 µA supply current low drop linear regulator Features • 2.3 V to 12 V input voltage range ■ 50 mA maximum output current ■ 3 µA quiescent current ■ Available in 1.8 V, 2.5 V, 3.3 V, 5.0 V and adjustable SOT323-5L ■ 200 mV dropout voltage at 25 mA output

g4002

Contextual Info: SOT323 NPN SILICON PLANAR VHF/UHF TRANSISTOR ISSUE 1 - DECEMBER 1998 P A R T M A R K IN G D E T A I L - T5 SO T 32 3 ABSOLUTE M A X IM U M RATINGS. SYM BOL PARAM ETER V A LU E U N IT V C BO 30 V Collector-Emitter Voltage V CEO 15 V Emitter-Base Voltage V EBO

Contextual Info: SOT323 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR ISSUE 1 - DECEMBER 1998 P A R T M A R K IN G D E T A IL - T 2 0 S»ÜT3tëS ABSOLUTE M AXIM UM RATINGS. PARAMETER SYM BOL VALUE U N IT 35 V VcEO 30 V V ebo 4.5 V 50 mA 330 mW -55 to +150 °C C ollecto r-B ase V oltag e

RF IC

Abstract: ZUMTS17 ZUMTS17H DSA003735
Contextual Info: SOT323 NPN SILICON PLANAR RF TRANSISTORS ZUMTS17 ZUMTS17H ISSUE 1 – DECEMBER 1998 PARTMARKING DETAIL — ZUMTS17 - T4 ZUMTS17H - T4H ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage V CBO 25 V V CEO 15

NPN CD100 transistor

Abstract: smd transistor a68 NPN CD100 transistor file B80 smd diode Schottky Diode SC-62 octal MOSFET ARRAY smd transistor bq automotive mosfet SOT363 flash N-Channel Microcontrollers
Contextual Info: NEW MULTIMARKET PRODUCTS QUARTERLY HIGHLIGHTS VOLUME 2 ISSUE 3 Semiconductors AUGUST 2003 Discretes Logic Microcontrollers Standard Analog In this issue: 1. PMGD8000LN 20 V, 30 V and 60 V N-channel MOSFETs in SOT323 and SOT363 2. PBSS4350X, PBSS5350X, PBSS4250X

Contextual Info: SOT323 NPN SILICON PLANAR ZUMTS20 VHF TRANSISTOR ISSUE 1 - DECEMBER 1998 Q_ PARTM ARKING DETAIL — T3 ABSOLUTE M AXIM UM RATINGS. PARAMETER SYMBOL VALUE UNIT C o lle c to r-B a s e V o lta g e VcBO 30 V V C o lle c to r-E m itte r V o lta g e

PMF370XN

Abstract: PMF280UN PMF290XN PMF400UN PMF780SN PMGD370XN PMGD400UN PMGD780SN PMGD8000LN SOT323 MOSFET P
Contextual Info: µTrenchMOS 20 V, 30 V and 60 V N-channel A new dimension in power MOSFETs in SOT323 and SOT363 Leading the way in miniaturization and Trench technology, Philips innovative µTrenchMOS portfolio delivers excellent performance from the smallest devices. As consumers

clk sot363

Abstract: SOT323 MOSFET P dual sot363 PMGD780SN Philips 370 PMF280UN PMF290XN PMF370XN PMF400UN PMF780SN
Contextual Info: µTrenchMOS 20 V, 30 V and 60 V N-channel A new dimension in power MOSFETs in SOT323 and SOT363 Leading the way in miniaturization and Trench technology, Philips innovative µTrenchMOS portfolio delivers excellent performance from the smallest devices. As consumers

SOT323 MOSFET P

Abstract: SOT363 MOSFET N sot323 dual sot363 PMF280UN PMF290XN PMF370XN PMF400UN NXP MOSFETs PMGD290XN
Contextual Info: 20 V, 30 V and 60 V N-channel MOSFETs in SOT323 and SOT363 A new dimension in power Leading the way in miniaturization and Trench technology, NXP’s innovative TrenchMOS portfolio delivers excellent performance from the smallest devices. As consumers demand smaller, efficient

CC21 CAPACITOR

Contextual Info: Preliminary Technical Data ADP1829, APD210X and ADP171X Reference Design FCDC 00059 FEATURES Seven Output Voltages: 3.6 V, 3.3 V,3.3l V 2.5 V, 1.8 V, 1.25 V, 0.9 V Output Current: 0.002 A to 3.0 A Input voltage: 10.8-13.2 V Ripple 2% ppk of Output Voltage

Contextual Info: Sm all Signal Transistors U.S. Specification Preferred Series SOT-23 Case, 350mW TYPE NO. SVCBO b v ceo W m * b v EBO (V) . •CBO • VCB (V) <lC ES (nA) MIN MAX o es . e (V) (V) MIN General Purpose Amplifier/Switches v c e (s a t ) e v CE (mA) MAX

Contextual Info: SÌ1303EDL Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY V d s (V) Id (A) ^D S (o n) ( ß ) 0.430 @ VQS = -4 .5 V -2 0 ± 0 .7 2 0.480 @ V q S = -3 .6 V ± 0 .6 8 ESD Protected 0.700 9 V GS = -2 .5 V ± 0 .5 6 3000 V SOT-323 SC-70 (3-LEADS)

GS 069 LF

Contextual Info: SM307EDL Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY V DS(V) 0.290 @ V g s = -1 2 I d (A) rDS(on) (ß ) -5 V ±0.91 V ± 0 .7 4 ESD Protected 0.580 @ V qs = -1 -8 V ± 0 .6 4 3000 V 0.435 @ VQS = -2 .5 SOT-323 SC-70 (3-LEADS) X X LF YY Marking Code

SM305

Contextual Info: SM 305_ New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY V d s (V ) -8 •d ( A ) r D S {o n ) ( & ) 0.280 @ VGS = -4 .5 V ± 0 .9 2 0.380 @ V 6S = -2 .5 V ± 0 .7 9 0.530 @ V Gs = -1 -8 V ± 0 .6 7 \* A SOT-323 SC-70 (3-LEADS)

LBC807WT1

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors 3 COLLECTOR 1 BASE LBC807WT1 2 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO –45 V Collector–Base Voltage V CBO –50 V Emitter–Base Voltage V –5.0 V –500

W18 sot23

Abstract: ic w83 SOT343R bfp280tw SOT-343 BFP181TW
Contextual Info: Tem ic Semiconductors :m> # T 050I3 T050 (4) SOT23 60 Part Number v CEO Icnrax Plot 8t Tgjnti i s V mA # mW °C # SOT143 # SOT323 SOT343 Electrical characteristics ff at Ic hre a tlc and Gp at Ic and f VCE mA V MHz | raA dB mA MHz F at f and Ic dB MHz mA

diode ds 10-100 s

Abstract: "MARKING CODE LE"
Contextual Info: SÌ1305EDL Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY r D S (o n) ( ß ) Ip (A) 0.280 @ V qs * -4 -5 V ± 0 .9 2 V d s (V) -8 0.380 @ VGS = —2.5 V ± 0 .7 9 ESD Protected 0.530 @ VGS = -1 .8 ± 0 .6 7 3000 V V SOT-323 SC-70 (3-LEADS) YY

P-Channel 1.8-V G-S MOSFET sot-323

Abstract: SI1305DL-T1 SI1305DL
Contextual Info: Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −8 rDS(on) (W) ID (A) 0.280 @ VGS = −4.5 V −0.92 0.380 @ VGS = −2.5 V −0.79 0.530 @ VGS = −1.8 V −0.67 D TrenchFETr Power MOSFET: 1.8 V Rated RoHS COMPLIANT

Si1305DL

Abstract: Si1305DL-T1
Contextual Info: Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −8 rDS(on) (W) ID (A) 0.280 @ VGS = −4.5 V −0.92 0.380 @ VGS = −2.5 V −0.79 0.530 @ VGS = −1.8 V −0.67 D TrenchFETr Power MOSFET: 1.8 V Rated RoHS COMPLIANT