V SOT-563 MOSFET Search Results

NTZD3155CT1G

Abstract: NTZD3155C NTZD3155CT2G NTZD3155CT5G
Contextual Info: NTZD3155C Small Signal MOSFET Complementary 20 V, 540 mA / -430 mA, with ESD protection, SOT-563 package. Features http://onsemi.com •ăLeading Trench Technology for Low RDS on Performance •ăHigh Efficiency System Performance •ăLow Threshold Voltage

NTZD3155CT2G

Contextual Info: NTZD3155C Small Signal MOSFET Complementary 20 V, 540 mA / -430 mA, with ESD protection, SOT-563 package. Features http://onsemi.com •ăLeading Trench Technology for Low RDS on Performance •ăHigh Efficiency System Performance •ăLow Threshold Voltage

Contextual Info: PPJX8802 20V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 20 V 0.7A Current SOT-563 Unit : inch mm Features  RDS(ON) , VGS@4,5V, ID@0.7A<150mΩ  RDS(ON) , VGS@2.5V, ID@0.5A<220mΩ  RDS(ON) , VGS@1.8V, ID@0.2A<400mΩ  Advanced Trench Process Technology

Contextual Info: PPJX138K 50V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 50 V SOT-563 350mA Current Unit : inch mm Features  RDS(ON) , VGS@10V, ID@500mA<1.6Ω  RDS(ON) , VGS@4.5V, ID@200mA<2.5Ω  RDS(ON) , VGS@2.5V, ID@100mA<4.5Ω  Advanced Trench Process Technology

PJX138K

Contextual Info: PPJX138K 50V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 50 V SOT-563 350mA Current Unit : inch mm Features  RDS(ON) , VGS@10V, ID@500mA<1.6Ω  RDS(ON) , VGS@4.5V, ID@200mA<2.5Ω  RDS(ON) , VGS@2.5V, ID@100mA<4.5Ω  Advanced Trench Process Technology

Contextual Info: PPJX138K 50V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 50 V SOT-563 350mA Current Unit : inch mm Features  RDS(ON) , VGS@10V, ID@500mA<1.6Ω  RDS(ON) , VGS@4.5V, ID@200mA<2.5Ω  RDS(ON) , VGS@2.5V, ID@100mA<4.5Ω  Advanced Trench Process Technology

Contextual Info: PPJX8806 20V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 20 V 800mA Current SOT-563 Unit : inch mm Features  RDS(ON), VGS@4.5V,IDS@500mA=0.4Ω  RDS(ON), VGS@2.5V,IDS@300mA=0.7Ω  RDS(ON), VGS@1.8V,IDS@100mA=1.2Ω(typ)  Advanced Trench Process Technology

MOSFET IGNITION

Abstract: NTMS4700NR2
Contextual Info: ON Semiconductor Selector Guide − Power MOSFET Products Power MOSFET Products In Brief . . . ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑÑ ÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ

022 463a

Abstract: SOT563-6
Contextual Info: NTZS3151P Small Signal MOSFET −20 V, −950 mA, P−Channel SOT−563 Features • • • • Low RDS on Improving System Efficiency Low Threshold Voltage Small Footprint 1.6 x 1.6 mm These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Contextual Info: NTZS3151P Small Signal MOSFET −20 V, −950 mA, P−Channel SOT−563 Features • • • • Low RDS on Improving System Efficiency Low Threshold Voltage Small Footprint 1.6 x 1.6 mm This is a Pb−Free Device http://onsemi.com V(BR)DSS Applications RDS(on) TYP

sot-563 MOSFET D1

Contextual Info: NTZD3152P Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection, SOT−563 Features • • • • Low RDS on Improving System Efficiency Low Threshold Voltage ESD Protected Gate Small Footprint 1.6 x 1.6 mm http://onsemi.com V(BR)DSS

NTZD5110NT1G

Abstract: NTZD5110NT5G sot-563 MOSFET D1
Contextual Info: NTZD5110N Small Signal MOSFET 60 V, 310 mA, Dual N−Channel with ESD Protection, SOT−563 Features • • • • • Low RDS on Improving System Efficiency Low Threshold Voltage ESD Protected Gate Small Footprint 1.6 x 1.6 mm These are Pb−Free Devices

NTZS3151PT1G

Abstract: NTZS3151PT5G NTZS3151P
Contextual Info: NTZS3151P Small Signal MOSFET −20 V, −950 mA, P−Channel SOT−563 Features • • • • Low RDS on Improving System Efficiency Low Threshold Voltage Small Footprint 1.6 x 1.6 mm This is a Pb−Free Device http://onsemi.com V(BR)DSS Applications RDS(on) TYP

a950

Contextual Info: NTZS3151P Small Signal MOSFET −20 V, −950 mA, P−Channel SOT−563 Features • • • • Low RDS on Improving System Efficiency Low Threshold Voltage Small Footprint 1.6 x 1.6 mm These are Pb−Free Devices http://onsemi.com V(BR)DSS RDS(on) Typ −20 V

NTZD3152PT1G

Abstract: NTZD3152P NTZD3152PT5G
Contextual Info: NTZD3152P Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection, SOT−563 Features • • • • • http://onsemi.com Low RDS on Improving System Efficiency Low Threshold Voltage ESD Protected Gate Small Footprint 1.6 x 1.6 mm These are Pb−Free Devices

Contextual Info: NTZD3152P Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection, SOT−563 Features • • • • • Low RDS on Improving System Efficiency Low Threshold Voltage ESD Protected Gate Small Footprint 1.6 x 1.6 mm These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

NTZD5110NT1G

Contextual Info: NTZD5110N Small Signal MOSFET 60 V, 310 mA, Dual N−Channel with ESD Protection, SOT−563 Features • • • • • Low RDS on Improving System Efficiency Low Threshold Voltage ESD Protected Gate Small Footprint 1.6 x 1.6 mm These are Pb−Free Devices

v sot-563 MOSFET

Abstract: NTZS3151PT1G NTZS3151P NTZS3151PT5G
Contextual Info: NTZS3151P Small Signal MOSFET −20 V, −950 mA, P−Channel SOT−563 Features • • • • Low RDS on Improving System Efficiency Low Threshold Voltage Small Footprint 1.6 x 1.6 mm These are Pb−Free Devices http://onsemi.com V(BR)DSS RDS(on) Typ 120 mW @ −4.5 V

v sot-563 MOSFET

Abstract: dd 127 dd 127 d NTZD3152PT1G ON v sot-563 10-35* DIODE NTZD3152P tu marking NTZD3152PT5G
Contextual Info: NTZD3152P Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection, SOT−563 Features • • • • Low RDS on Improving System Efficiency Low Threshold Voltage ESD Protected Gate Small Footprint 1.6 x 1.6 mm http://onsemi.com V(BR)DSS

Contextual Info: NTZD3152P Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection, SOT−563 Features • • • • • http://onsemi.com Low RDS on Improving System Efficiency Low Threshold Voltage ESD Protected Gate Small Footprint 1.6 x 1.6 mm These are Pb−Free Devices

Contextual Info: NTZD5110N Small Signal MOSFET 60 V, 310 mA, Dual N−Channel with ESD Protection, SOT−563 Features • • • • • Low RDS on Improving System Efficiency Low Threshold Voltage ESD Protected Gate Small Footprint 1.6 x 1.6 mm These are Pb−Free Devices

ON v sot-563

Abstract: v sot-563 MOSFET NTZS3151P NTZS3151PT1G NTZS3151PT5G
Contextual Info: NTZS3151P Small Signal MOSFET −20 V, −950 mA, P−Channel SOT−563 Features • • • • Low RDS on Improving System Efficiency Low Threshold Voltage Small Footprint 1.6 x 1.6 mm This is a Pb−Free Device http://onsemi.com V(BR)DSS Applications RDS(on) TYP

SOT563-6

Abstract: NTZD3152P NTZD3152PT1G NTZD3152PT5G
Contextual Info: NTZD3152P Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection, SOT−563 Features • • • • • http://onsemi.com Low RDS on Improving System Efficiency Low Threshold Voltage ESD Protected Gate Small Footprint 1.6 x 1.6 mm These are Pb−Free Devices

Contextual Info: NTZD3155C Small Signal MOSFET Complementary 20 V, 540 mA / −430 mA, with ESD protection, SOT−563 package. Features • • • • • • Leading Trench Technology for Low RDS on Performance High Efficiency System Performance Low Threshold Voltage ESD Protected Gate