V 250 C 45 Search Results

RS1019

Abstract: SRS4452 ScansU9X21 PA 66 GF 25
Contextual Info: 1 1 Uf if ! V a j ' C-Tgr i RS 1019 Sim 6,3 1,3 I 12,6 0,65 1 ! ua MHz V < C-TIf A M . J A-mod i f x 3 V V 200 200 200 200 400 400 400 600 200 300 400 600 200 300 400 400 600 200 250 250 250 200 250 250 250 250 - 200 200 200 400 300 500 600 300 600 250 250

Contextual Info: Type NPN A m bient PD PNP One Side mW Both Sides mW 2N2974 250 300 2N2975 250 2N2976 V CE Sat @ l c / l B H F E @ lc V CE V olts V EB Volts 45 45 6 300 45 45 250 300 45 2N2977 250 300 2N2978 250 2N2979 V CB Volts T racking Electrical Characteristics @ 25°C (One Side)

60-025A

Contextual Info: DSEP 60-025A HiPerFREDTM Epitaxial Diode IFAV = 60 A VRRM = 250 V trr = 30 ns with soft recovery Preliminary data sheet VRSM VRRM V V 250 250 Type A C TO-247 AD C DSEP 60-025A A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings

D-68623

Abstract: common anode diode TO-220 9A25
Contextual Info: DGS 9-025AS DGS 10-025A DGSK 20-025A IDC = 12 A VRRM = 250 V CJunction = 18 pF Gallium Arsenide Schottky Rectifier VRSM VRRM Type V V Marking on product 250 9A25AS A 250 DGS 9-025AS C Single A 250 250 250 250 DGS 10-025A DGS 10-025A DGSK 20-025A DGSK 20-025A

D-68623

Abstract: DGS3-025AS 8025A
Contextual Info: DGS 4-025A DGS 3-025AS DGSK 8-025A IFAV = 5.4 A VRRM = 250 V CJunction = 9 pF Gallium Arsenide Schottky Rectifier VRSM VRRM Type V Marking V on product A 250 250 DGS 3-025AS 3A025AS 250 250 DGS 4-025A DGS 4-025A 250 250 DGSK 8-025A DGSK 8-025A C Single A Single

common anode diode to-220

Abstract: D-68623
Contextual Info: DGS 19-025AS DGS 20-025A DGSK 40-025A IDC = 18 A VRRM = 250 V CJunction = 26 pF Gallium Arsenide Schottky Rectifier VRSM VRRM Type V V 250 250 Marking on product DGS 19-025AS 19A25AS A Single C A 250 250 250 250 DGS 20-025A DGS 20-025A DGSK 40-025A DGSK 40-025A

Contextual Info: DGS 10-022A DGS 10-025A DGSK 20-022A DGSK 20-025A IFAV = 12 A VRRM = 220/250 V CJunction = 18 pF Gallium Arsenide Schottky Rectifier Preliminary Data VRSM VRRM V V Type 220 250 220 250 DGS 10-022A DGS 10-025A VRSM VRRM Type V V 220 250 220 250 A C TO-220 AC

Contextual Info: DGSK 20-022AS DGSK 20-025AS IFAV = 2x12 A VRRM = 220/250 V CJunction = 18 pF Gallium Arsenide Schottky Rectifier Preliminary Data VRSM VRRM V V 220 250 220 250 TO-263 AB Type A A DGSK 20-022AS DGSK 20-025AS A C C TAB A A = Anode, C = Cathode Symbol Conditions

SMPS Symbol

Contextual Info: DGSK 20-022AS DGSK 20-025AS IFAV = 2x12 A VRRM = 220/250 V CJunction = 18 pF Gallium Arsenide Schottky Rectifier Preliminary Data VRSM VRRM V V 220 250 220 250 TO-263 AB Type A A DGSK 20-022AS DGSK 20-025AS A C C TAB A A = Anode, C = Cathode Symbol Conditions

Single Schottky diode TO-220

Contextual Info: DGS 20-022A DGS 20-025A DGSK 40-022A DGSK 40-025A IFAV = 18 A VRRM = 220/250 V CJunction = 26 pF Gallium Arsenide Schottky Rectifier Preliminary Data VRSM VRRM V V Type 220 250 220 250 DGS 20-022A DGS 20-025A VRSM VRRM Type V V 220 250 220 250 A C TO-220 AC

Contextual Info: PolarHTTM Power MOSFET VDSS ID25 IXTQ 64N25P IXTT 64N25P = = ≤ RDS on 250 V 64 A Ω 49 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 250 250 V V VGSS VGSM Continuous

Contextual Info: PolarHTTM Power MOSFET VDSS ID25 IXTQ 64N25P IXTT 64N25P = = ≤ RDS on 250 V 64 A Ω 49 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 250 250 V V VGSS VGSM Continuous

smps 2.03

Abstract: D-68623
Contextual Info: DGSK 20-025AS IFAV = 2x12 A VRRM = 250 V CJunction = 18 pF Gallium Arsenide Schottky Rectifier VRSM VRRM V V 250 250 A Type C A TO-263 AB A A DGSK 20-025AS C TAB A = Anode, C = Cathode Symbol Conditions Maximum Ratings IFAV IFAV TC = 25°C; DC TC = 90°C; DC

"RPX 30"

Abstract: rpx 20 RPX 10 1-20VA v 250 c 45 RPX10 RPX20 24-VC PLC88 RPX30
Contextual Info: Power supply modules for all RPX Frequency Unregulated output voltage Dielectric strength Secondary protection Max. break in supply voltage Weight Status indicator Galvanic isolation 120 V a / 24 V c 250 mA filtered 120 V a / 24 V c 500 mA filtered 230 V a / 24 V c 250 mA filtered

41t smd

Abstract: 476 16q CP QUICK CONNECT LAA110 LAA120 LBA110 LBA120 LBB110 LBB120 LCC110
Contextual Info: OptoMOS AC/DC Solid State Switches E ngineering S pecifications LA A 110 LAA120 350 250 LBA110 LBA120 LBB110 LBB120 LCC110 LCC120 OAA160 350 250 350 250 250 Output C haracteristics Peak B locking V 350 250 C ontinuous Rated Load (m A)* 120 170 120 170 120

a1271

Abstract: A1275 A1271 Y A102 A 004 ma a305 k a1271
Contextual Info: OptoMOS AC/DC Solid State Switches E ngineering S pecifications LA A 110 LAA120 350 250 LBA110 LBA120 LBB110 LBB120 LCC110 LCC120 OAA160 350 250 350 250 250 Output C haracteristics Peak B locking V 350 250 C ontinuous Rated Load (m A)* 120 170 120 170 120

TIP50C

Contextual Info: NPN SILICON TRANSISTOR TIP47/48/49/50 HIGH VOLTAGE AND SWITCHING APPLICATIONS HIGH SUSTAINING VOLTAGE V ceo( sus : 250 to 400V) 1A RATED COLLECTOR CURRENT ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Unit 350 V :TIP48 400 V :TIP49 450 V :TIP50 500 V 250

Contextual Info: NPN SILICON TRANSISTOR TIP47/48/49/50 HIGH VOLTAGE AND SWITCHING APPLICATIONS HIGH SUSTAINING VOLTAGE V ceo( sus : 250 to 400V) 1A RATED COLLECTOR CURRENT ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Unit 350 V :TIP48 400 V :TIP49 450 V :TIP50 500 V 250

to92c

Contextual Info: Low Level and General Purpose Amplifiers MAXIMUM RATINGS H , HE ft C* min max MHz (MHz) N.F. max (dB) Ic VcE max Ic (mA) (V ) (V ) (mA) 450 # 450 # 800 # 800 # 800 # 2 2 2 2 2 5 5 5 5 5 0.6 0.6 0.6 0.6 0.6 100 100 100 100 100 300+ 250+ 250+ 250+ 250+ 4.5

2n6722

Contextual Info: Power Transistors TO-237 Case TYPE NO. iC PD BVCBO BVCEO @ ic hFE VCE SAT @ IC n *b v c e s (A) (W) (mA) (mA) (MHz) (V) (V) MIN MIN MIN MAX 2.0 40 30 50 250 1,000 0.5 1,000 50 2.0 2.0 50 40 50 250 1,000 0.5 1,000 50 2N6728 2.0 2.0 60 60 50 250 250 0.35 250

1981-R

Abstract: LAA110 LAA120 LBA110 LBA120 LBB110 LBB120 LCC110 LCC120 OAA160
Contextual Info: OptoMOS AC/DC Solid S ta te S w itch es E ngineering S pecifications LA A 110 LAA120 350 250 LBA110 LBA120 LBB110 LBB120 LCC110 LCC120 OAA160 350 250 350 250 250 Output C haracteristics Peak B locking V 350 250 C ontinuous Rated Load (m A)* 120 170 120 170

ZS90

Abstract: ZS92 2S150 KS78B diode zs104 ZS140 Ks77 d8 d8 ZS94 ZS131
Contextual Info: SILICON DIODES Very Low Leakage Planar Epitaxial Characteristics M axim um Ratings Type No. Mean Rectified Current at 75°C V RWM 2S150 ZS151 ZS152 ZS153 ZS154 ZS155 Surge C urrent fo r 5 mS. A Max. Reverse Current at V r ^ M at 25°C nA 250 250 250 250 250

55625

Contextual Info: V 250 H Rechargeable Ni-MH Button Data Sheet Type Number: 55625 System: Nickel Metal Hydride/ KOH Electrolyte Nominal Voltage [V]: 1.2 Nominal Capacity C [mAh]: 240 Typical Capacity C [mAh]: 250 at 48 mA / 1.00 V Weight, approx. [g] 10 Dimensions [mm]: min.

7508M

Abstract: RR1000 STL-J1-250-4M-01 0752
Contextual Info: MATERIAL: NYLON MATERIAL: NYLON 6/6 6/6 UL-94 V-0, RMSUL-94 V-2, RMS-01 19 COLOUR:NATURAL COLOUR:NATURAL 1 2 3 4 C B A "A" STL-J#-250-4M-01 STL-J#-250-4M-19 4[0.157] STL-#-250-3-01 STL-#-250-3-19 4.8[0.189] STL-J#-250-6M-01 STL-J#-250-6M-19 6[0.236] STL-J#-250-8M-01