V 125 Search Results

v30010

Abstract: V100100 v50010 V5050
Contextual Info: DC Ammeter Shunts STD Accuracy ± 0.25% TYPE V: 15 through 600 Amperes TYPE V: 50 mV Catalog Number V-15-50 V-20-50 V-50-50 V-75-50 V-100-50 V-125-50 V-150-50 V-175-50 V-200-50 V-250-50 V-300-50 V-375-50 V-400-50 V-500-50 V-600-50 AMP A B C D E 15 20 50 75

Contextual Info: i H IR D ANGLE PROJECTION ECWH 12362R V / 1 / 1 / 1 / 1 12392ROV 12432ROV 12472R()V 12512R()V 12562R()V 12622R()V 12682R()V 12752R()V 1 / 12822ROV 1 / 12912R()V / 1 / 1 I 1 1 / I 1 / 1 / 1 1 1 / 1 12103ROV 12113ROV 12123R()V 12133R()V 12153R()V 12163R()V

r8200

Abstract: CR-M024AC4 cr-m024dc CR-M024DC4 CR-M024DC3L CR-M125DC4 R8300 CR-M230AC2 CR-M024DC2 CR-M230AC4L
Contextual Info: Pluggable interface relays CR-M Miniature relays 2CDC 293 035 F0004 Data sheet 1 2 4 3 5 Features ½ Standard miniature relays with mechanical status indication ½ 12 different supply voltages: DC versions: 12 V, 24 V, 48 V, 60 V, 110 V, 125 V, 220 V AC versions: 24 V, 48 V, 110 V, 120 V, 230 V

ske 1 1/12

Abstract: ske 1/12 ske 1/02
Contextual Info: SKE 1 •fr m s — ^ ^ » * f a v ^ '* » 3 A SKE 1/01 SKE 1/02 SKE 1/06 SKE 1/10 SKE 1/12 V rsm 120 V 400 V 800 V 1250 V 1500 V V rrm 120 V 400 V 800 V 1250 V 1500 V Ifav Tomb = 45 °C, sin. 180 °el 1,3 A 7A Ifrms I fcl (Tomb = 45 °C) 1,0 A Ifsm (Tvi =

Contextual Info: ON Semiconductor Selector Guide − Power MOSFET Products MOSFET − Surface Mount RDS on Max (W) @ VGS = VDSS (V) 10 V 4.5 V/5.0 V* 2.5 V/2.7 V* 1.8 V QT Typ (nC) @ VGS = 4.5 V (5.0 V)/10 V* ID (A) PD (W) 23.6 125 113.6 Max Rating Config. Page No. NTB125N02R

SKN 170

Abstract: SKn 100/04
Contextual Info: S K N 1 0 0 / S K R IO O IPRMS Z O O * ; I f a v - 1 2 5 A S K N 100/04 S K R 100/04* S K N 100/08 S K R 100/08* V rsm 400 V 800 V 1200 V 1400 V 1600 V V rrm 400 V 800 V 1200 V 1400 V 1600 V Ifav Tease = 100 °C, sin. 180°el 125 A (Tease = 125°C, sin. 180°el)

3n84

Abstract: 3N81 TB4140V CG2-22-10 CG2-22-14 CG2-25-10 TB4100V TB4120V TB4160V 3N82
Contextual Info: THYRISTORS , AT Caractéristiques électriques Electrical characteristics Valeurs limites Absolute max. ratings V DWM TYPES 'o A V RWM (V) ITSM V RSM (10ms) (V) (A) lH V GT (V) 'GT ImA) rg k= V TM oo Im A ] (V) 345 A eff (rms) / tcase=80°C t(vj)=125°C l2t=80.000A2s

798-0292

Abstract: fuse MST 798-0476
Contextual Info: Schurter Miniature Fuses/Holders Quick-Acting Surface Mount Fuse Ñ 63 V Quick-Acting and Time-Lag Microfuses Ñ 125 V/250 V Resettable Polymeric Fuses MSF 125 V and MST/FRT 250 V built according to IEC 127. MSF 125 V breaks at 300 A/125 V AC. MSF/MST 250 V breaks at 35 A/250 V AC. FRT 250 V

FRMS

Contextual Info: SKS 1 *FRMS — 7 A ¡ *FA V — SKS 1/02 SKS 1/06 SKS 1/10 SKS 1/12 V rsm 400 V 800 V 1250 V 1500 V V rrm 400 V 800 V 1250 V 1500 V Ifav Tamb = 4 5 °C ,s in .1 8 0 °e l 1,4 A 7A I frm s Ifcl (Tomb = 45 °C ) 1,2 A Ifsm (T v i = 25 ° C ) 115 A (Tvi = 160 °C)

Contextual Info: A L T E R A T I ON T H IR D ANGLE P R O J E C T IO N i TEM CODE E C W H 1 2 3 6 2 V // 12392 ( ) V n 12432 ( ) V // 124720 V // 125120V // 125620V // 12622 ( ) V // 126820V // 12752 ( ) V // 12822 ( ) V // 129120 V // 12 10 3 0 V n 12 1 13 O V n 12 1 2 3 0 V

Contextual Info: IXGH 32N60A IXGH 32N60AS HiPerFAST IGBT = = = = CES v C25 CE sat tfi 600 V 60 A 2.9 V 125 ns *4 $ Maximum IRatings Symbol Test Conditions VCES Tj = 25°C to 150°C 600 V V CQR Tj = 25°C to 150°C; RGE = 1 M£2 600 V v GES Continuous ±20 V v GEM Transient

Contextual Info: SKN 20/SKR 20 •frm s SKN 20/12 SKR 20/12 SKN 20/14 SKR 20/14 SKN 20/16 SKR 20/16 800 V 1200 V 1400 V 1600 V 800 V 1200 V 1400 V 1600 V SKN 20/04 SKR 20/04 SKN 20/08 SKR 20/08 V rsm 400 V V rrm 400 V a> o 25 A p 00 o o CD S o Tcase = 125 °C , c (Tca« = 1 0 0 °C ,S

Contextual Info: SK3438 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)500 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: NTE2305 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)160 V(BR)CBO (V)160 I(C) Max. (A)16 Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N2636 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A)25 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)125# I(CBO) Max. (A)10m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

HEPS5020

Contextual Info: HEPS5020 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)325 V(BR)CBO (V)400 I(C) Max. (A)10 Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC)140õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: PTC118 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)320 I(C) Max. (A)10 Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC) I(CBO) Max. (A)5.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N5324 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)250 I(C) Max. (A)10 Absolute Max. Power Diss. (W)56 Maximum Operating Temp (øC)125õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: B1178 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)160 V(BR)CBO (V)160 I(C) Max. (A)10 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)125 I(CBO) Max. (A)10mØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: B10067 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)80â V(BR)CBO (V) I(C) Max. (A)14 Absolute Max. Power Diss. (W)60 Maximum Operating Temp (øC)125õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: MP2400B Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V) I(C) Max. (A)25 Absolute Max. Power Diss. (W)106 Maximum Operating Temp (øC)125õ I(CBO) Max. (A)200u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2SC159 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)20m Absolute Max. Power Diss. (W)125m Maximum Operating Temp (øC)175 I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: Leaded multilayer, mono-kap 50 V/100 V NP0 COG Dielectric Rated DC voltage 50 V Operating temp. range X7R 100 V 50 V Z5U 100 V 50 V 100 V –55 to +125 °C –55 to +125 °C +10 to + 85 °C Tolerance on capacitance ± 5%, ±10% Capacitance (pF) 15 15 15

Contextual Info: 2N2637 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A)25 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)125# I(CBO) Max. (A)10m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)