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    ecl84

    Abstract: tube Ecl84 ecl 84 TRIODE PENTODE el 84 4VLA tube el 84
    Contextual Info: PHILIPS [ËCL84 TRIODE-PENTODE with separate cathodes. Triode for use in circuits for keyed A.G.C., sync-separation, sync-amplification and noise suppression. Pentode for use as video output tute TRIODE PENTHODE avec cathodes séparées.La triode pour uti­


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    ecl84tube ecl84ecl 84triode+3pentode el 844vlatube el 84 PDF

    TMS320C25

    Abstract: TMS320C30 TMS320C50
    Contextual Info: L&H.smc350 by Lernout & Hauspie Speech Products Software Overview , L&H.smc350 Coder provides the ability to compress encode and decompress (decode) speech for more efficient storage and faster transmission. The product uti- lizes proprietary codebook excited linear


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    smc350tms320c25tms320c30tms320c50 PDF

    mci741

    Abstract: AN-587 motorola motorola op amp an587 AN-587 op amp current power semiconductor 1973
    Contextual Info: ANALYSIS AND DESIGN OF THE OP AMP CURRENT SOURCE Prepared by Tim Henry Applications Engineering Motorola Inc. A voltage controlled current source uti­ lizing an operational amplifier is discussed. Expressions for the transfer function and output impedances are developed using


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    an-587an587/dphx7973-mci741+4an-587 motorolamotorola op amp an587op amp currentpower semiconductor 1973 PDF

    PCC84

    Abstract: schema television Philips schema MQ K1 V101U 1n 4871 SCHEMA cascode
    Contextual Info: PHILIPS IPCC 84 L . _ DOUBLE TRIODE particularly designed for use as R.F. cascode amplifier in tuners for television receivers up to 220 Mc/s DOUBLE TRIODE conçue particulièrement pour être uti­ lisée comme amplificatrice H.F. en montage cascode


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    max22pcc847r041983h3-54+7schema televisionphilips schemamq k1v101u1n 4871schemacascode PDF

    PCL84

    Abstract: PCL-841 tube pcl84 pentode philips ll 220VHA
    Contextual Info: PHILIPS PCL 84 TRIODE-PENTODE with separate cathodes. Triode for use In circuits for keyed A.G.C., sync-separation, sync-ampliflcation and noise suppression. Pentode for use as video output tube TRIODE PENTHODE avec cathodes séparées. La triode pour uti­


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    pcl84pcl-841tube pcl84pentode+2philips ll220vha PDF

    ltw connector 12 pin

    Abstract: right angle Female m12 PCB connector ltw 8 pin nmea LTW12-PMMS-SH8 ltw 8 pin circular connector ltw 12 pin circular connector BMMA-SL8001 circular connector right angle mini USB TYPE B MALE PCB SL8001
    Contextual Info: Innovation in Waterproof Sol uti on URL:www.ltw-tech .con1 Ttae!W!g System for tu_4ustry Circular Circular Sensor USB DVI Sensor USB D-SUB Power RJ Circular RJ Sensor USB DVI • D-SUB DC Jack RF D-SUB Handheld ~~ Radio Circular Sensor • Power • Sensor


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    111jhlr11ovcltw connector 12 pinright angle female m12 pcb connector+8ltw 8 pin nmealtw12-pmms-sh8ltw 8 pin circular connectorltw 12 pin circular connectorbmma-sl8001circular connectorright angle mini usb type b male pcbsl8001 PDF

    4066 IC circuit diagram

    Contextual Info: Revised April 1999 SEMICONDUCTOR TM 74VHC4066 Quad Analog Switch General Description These devices are digitally controlled analog switches uti­ lizing advanced silicon-gate CMOS technology. These switches have low “on” resistance and low “off” leakages.


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    74vhc40664066 ic circuit diagram PDF

    Contextual Info: Revised February 1999 EMICONDUCTGRTM MM74HC4020 • MM74HC4040 14-Stage Binary Counter • 12-Stage Binary Counter General Description The M M 74H C 4020, M M 74H C 4040, are high speed binary ripple carry co unters. These counters are im plem ented uti­


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    mm74hc4020mm74hc404014-stage12-stage PDF

    TC51V4260

    Contextual Info: TOSHIBA TC51V4260DFTS60/70 PRELIM IN ARY 262,144 WORD X 16 BIT DYNAMIC RAM Description TheTC51V4260DFTS is the new generation dynamic RAM organized 262,144 word by 16 bits. TheTC51V4260DFTS uti­ lizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


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    tc51v4260dfts60/70thetc51v4260dftstc51v4260dftstcac16+1tc51v4260 PDF

    Contextual Info: UCC3957 -1/-2/-3/-4 UIMITRODE PRELIMINARY Three - Four Cell Lithium-Ion Protector Circuit FEATURES DESCRIPTION • Three or Four Cell Operation The UCC3957 is a BiCMOS three or four cell lithium-ion battery pack protector designed to operate with external P-channel MOSFETs. Uti­


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    ucc3957 PDF

    Contextual Info: UCC3957 -1/-2/-3/-4 y UNITRODE PRELIMINARY Three - Four Cell Lithium-Ion Protector Circuit FEATURES DESCRIPTION • Three or Four Cell Operation The UCC3957 is a BiCMOS three or four cell lithium-ion battery pack protector designed to operate with external P-channel MOSFETs. Uti­


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    ucc3957 PDF

    TC51V4265

    Abstract: d2539
    Contextual Info: TOSHIBA TC51V4265DFIS60/70 PRELIMINARY 262,144 WORD X 16 BIT DYNAMIC RAM Description TheTC51V4265DFTS is the new generation dynamic RAM organized 262,144 word by 16 bits. TheTC51V4265DFTS uti­ lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating mar­


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    tc51v4265dfis60/70thetc51v4265dftstc51v4265dftstc51v4265dfts-60/70+3dr04061194tc51v4265d2539 PDF

    GM7IC4100

    Contextual Info: GM71C4100A/AL GoldStar GOLDSTAR ELECTRON CO., LTD. 4,194,304 WORDS x l BIT CMOS DYNAMIC RAM Description Features The GM71C4100A/AL is the new generation dy­ nam ic RAM organized 4,1 9 4 ,3 0 4 x 1 Bit. GM71C4100A/AL has realized higher density, higher performance and various functions by uti­


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    gm71c4100a/al300-mil20-pin400-mil+1gm7ic4100 PDF

    Contextual Info: TOSHIBA ‘iO'iTHMÖ 00 2 Ô2 5 2 Û7D TC51V4260DFTS-60/70 PRELIMINARY 262,144 WORD X 16 BIT DYNAMIC RARA Description TheTC51V4260DFTS is the new generation dynamic RAM organized 262,144 word by 16 bits. TheTC51V4260DFTS uti­ lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


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    tc51v4260dfts-60/70thetc51v4260dftstc51v4260dfts PDF

    TC51V17400

    Contextual Info: TOSHIBA TC51V17400BSIW70 P R E LIM IN A R Y 4,194,304 WORD X 4 BIT DYNAMIC RAM D escription The TC51V17400BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC51V17400BST uti­ lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating mar­


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    tc51v17400bsiw70tc51v17400bst300tiiltc51v17400 PDF

    parcor

    Abstract: "speech synthesis" parcor Nippon capacitors
    Contextual Info: T C 8807 N/F -1 b4E p m tì0C,724C, odiasi b4ô « T 0S3 TOSHIBA 1. UC/UP GENERAL The TC8807N/F is a single chip voice synthesis CMOS LSI uti lizing the PARCOR system. The TC8807N/F includes the on-chip 4-bit microcontroller to be able to control the peripheral system.


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    tc8807ntc8807ftc8807n/fsystem/10+864kbittc8890n/ftmp42c70tc8807n/f-36tc8807n/f-37parcorspeech synthesis" parcornippon capacitors PDF

    Contextual Info: Revised D ecem ber 1998 SEMICONDUCTOR TM 74ACTQ10 Quiet Series Triple 3-Input NAND Gate General Description Features The AC TQ 10 contains three, 3-input NAND gates and uti­ lizes Fairchild FACT Q u iet Series™ technology to g uaran­ tee quiet output sw itching and improved dynam ic threshold


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    74actq10 PDF

    74HC374SJ

    Abstract: 74HC374N mm74hc37
    Contextual Info: S eptem ber 1983 Revised February 1999 SEMICONDUCTOR TM MM74HC374 3-STATE Octal D-Type Flip-Flop General Description signals are present at th e oth e r inputs and the state of the storage elem ents. The M M 74H C 374 high speed Octal D-Type Flip-Flops uti­


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    mm74hc37474hc374sj74hc374nmm74hc37 PDF

    BST60

    Contextual Info: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5116405BSJ/BST-60 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5116405BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5116405BSJ/BST uti­ lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,


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    tc5116405bsj/bst-60tc5116405bsj/bst300mildr16060295+2soj26-p-300cbst60 PDF

    BST60

    Contextual Info: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5117400BSJ/BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5117400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5117400BSJ/BST uti­ lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,


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    tc5117400bsj/bst-60/70tc5117400bsj/bst300mildr16040794+300e7tsoj26-p-300cbst60 PDF

    TC514260DJ

    Abstract: TC514260DFT
    Contextual Info: TOSHIBA TC514260DJ/DFT60/70 P R E LIM IN A R Y 262,144 WORD X 16 BIT DYNAMIC RAM D escription The TC514260DJ/DFT is the new generation dynamic RAM organized 262,144 word by 16 bit. The TC514260DJ/DFT uti­ lizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


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    tc514260dj/dft60/70tc514260dj/dfttcac15tc514260dj+1tc514260dft PDF

    gm71c4400az

    Contextual Info: T sg r GM71C4400A/AL G oldStar 1,048,576 WORDS x 4 BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The GM71C4400A/AL is the new generation dy­ nam ic RAM organized 1 ,0 4 8 ,5 7 6 x 4 Bit. GM71C4400A/AL has realized higher density, higher performance and various functions by uti­


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    gm71c4400a/al300-mil20-pin400-mil+1gm71c4400az PDF

    Contextual Info: TOSHIBA TC51V16400BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description TheTC 51V16400B ST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. T heTC 51V16400B ST uti­ lizes Toshiba's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide operating mar­


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    tc51v16400bst-60/7051v16400btc51v16400bst300mil PDF

    AN-370

    Abstract: J20A TP3069 TP3069J TP3069N TP3069V TP3069WM V20A
    Contextual Info: TP3069 ßN a t i o n a l Semiconductor TP3069 “Enhanced” Serial Interface CMOS CODEC/Filter COMBO General Description Features The TP3069 (A-iaw is a monolithic PCM CODEC/Filter uti­ lizing the A /D and D /A conversion architecture shown in Figure 1, and a serial PCM interface. The device is fabricat­


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    tp3069tp305x600flan-370+8tp3063tl/h/10578-6j20atp3069jtp3069ntp3069vtp3069wmv20a PDF