UTD484L Search Results
UTD484L Datasheets Context Search
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTD484 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTD484 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM |
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UTD484 UTD484 UTD484L-TN3-T UTD484G-TN3-T O-252 UTD484L-TN3-R UTD484G-TN3-R UTD484L-K08-3030-R UTD484G-K08-3030-R | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTD484 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTD484 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM |
Original |
UTD484 UTD484 UTD484L-TN3-T UTD484G-TN3-T O-252 UTD484L-TN3-R UTD484G-TN3-R UTD484G-K08-3030-R QW-R502-207 | |
utd484
Abstract: UTD484-TN3-R
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UTD484 UTD484 UTD484L UTD484-TN3-R UTD484L-TN3-R UTD484-TN3-T UTD484L-TN3-T QW-R502-207 UTD484-TN3-R | |
DIODE RL 207
Abstract: utd484
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UTD484 UTD484 UTD484-TN3-R UTD484L-TN3-R O-252 UTD484-TN3-T UTD484L-TN3-T UTD484-K08-3030-R UTD484L-K08-3030-R DIODE RL 207 | |
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Contextual Info: UNISONICTECHNOLOGIESCO., LTD UTD484 Power MOSFET N -CH AN N EL EN H AN CEM EN T M ODE FI ELD EFFECT T RAN SI ST OR ̈ DESCRI PT I ON The UTD484 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM |
Original |
UTD484 UTD484 UTD484-TN3-R UTD484L-TN3-R O-252 UTD484-TN3-T UTD484L-TN3-T UTD484-K08-3030-R UTD484L-K08-3030-R |