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    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT70N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT70N03 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM


    Original     		ut70n03ut70n03l-tn3-rut70n03g-tn3-ro-252+1qw-r502-269 PDF

    UT70

    Abstract: RD045 UT70N03
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT70N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT70N03 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM


    Original     		ut70n03ut70n03lut70n03gut70n03-tn3-r+7ut70n03-tn3-tut70n03l-tn3-rut70n03l-tn3-tut70n03g-tn3-rut70n03tut70rd045 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT70N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT70N03 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM


    Original     		ut70n03ut70n03l-tm3-tut70n03g-tm3-tut70n03l-tn3-t+4ut70n03g-tn3-tut70n03l-tn3-rut70n03g-tn3-rqw-r502-269 PDF